SNLS732 February   2023 DS160PR1601

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD and Latchup Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DC Electrical Characteristics
    6. 6.6 High Speed Electrical Characteristics
    7. 6.7 SMBUS/I2C Timing Charateristics
    8. 6.8 Typical Characteristics
    9. 6.9 Typical Jitter Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Control and Configuration Interface
      1. 7.3.1 Pin Configurations for Lanes
        1. 7.3.1.1 Five-Level Control Inputs
      2. 7.3.2 SMBUS/I2C Register Control Interface
      3. 7.3.3 SMBus/I 2 C Primary Mode Configuration (EEPROM Self Load)
    4. 7.4 Feature Description
      1. 7.4.1 Linear Equalization
      2. 7.4.2 Flat-Gain
      3. 7.4.3 Analog EyeScan
      4. 7.4.4 Receiver Detect State Machine
      5. 7.4.5 Integrated Capacitors
    5. 7.5 Device Functional Modes
      1. 7.5.1 Active PCIe Mode
      2. 7.5.2 Active Buffer Mode
      3. 7.5.3 Standby Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 PCIe x16 Lane Configuration
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.2 ESD and Latchup Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500
V(Signal+) Positive signal pin latch-up Signal pin test, per JESD78F class II, immunity level A (all signal pins) +100 mA
V(Signal-) Negative signal pin latch-up Signal pin test, per JESD78F class II, immunity level A (all signal pins except RX pins) -100
Signal pin test, per JESD78F class II, immunity level B, annex A flow 1F (RX pins are connected through 75nF - 265 nF capacitors)(3) -100
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2 kV may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) Per annex A flow 1F, negative pulse immunity on RX pins is –50 mA without series capacitors.