SLVSEO3
July
2018
ESD351
PRODUCTION DATA.
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1 Features
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2 Applications
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3 Description
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Typical USB 2.0 Application Schematic
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4 Revision History
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5 Pin Configuration and Functions
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Pin Functions
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6 Specifications
- 6.1
Absolute Maximum Ratings
- 6.2
ESD Ratings -JEDEC Specifications
- 6.3
ESD Ratings - IEC Specifications
- 6.4
Recommended Operating Conditions
- 6.5
Thermal Information
- 6.6
Electrical Characteristics
- 6.7
Typical Characteristics
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7 Detailed Description
- 7.1
Overview
- 7.2
Functional Block Diagram
- 7.3
Feature Description
- 7.4
Device Functional Modes
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8 Application and Implementation
- 8.1
Application Information
- 8.2
Typical Application
- 8.2.1
Design Requirements
- 8.2.2
Detailed Design Procedure
- 8.2.2.1
Signal Range
- 8.2.2.2
Operating Frequency
- 8.2.3
Application Curve
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9 Power Supply Recommendations
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10Layout
- 10.1
Layout Guidelines
- 10.2
Layout Example
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11Device and Documentation Support
- 11.1
Documentation Support
- 11.1.1
Related Documentation
- 11.2
Receiving Notification of Documentation Updates
- 11.3
Community Resources
- 11.4
Trademarks
- 11.5
Electrostatic Discharge Caution
- 11.6
Glossary
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12Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information
6.7 Typical Characteristics
Figure 1. TLP I-V Curve, I/O Pin to GND (tp = 100 ns)
Figure 3. 8-kV IEC 61000-4-2 Clamping Voltage, I/O pin to GND
Figure 5. Surge Curve (IEC 61000-4-5, tp = 8/20 µs), I/O Pin to GND
Figure 7. Leakage Current at 3.6 V Bias Voltage Across Temperature, I/O Pin to GND
Figure 9. Insertion Loss Vs. Frequency
Figure 2. TLP I/V Curve, GND to I/O Pin (tp = 100 ns)
Figure 4. 8-kV IEC 61000-4-2 Clamping Voltage, GND to I/O Pin
Figure 6. DC IV-Curve, I/O Pin to GND
Figure 8. Capacitance Vs. Bias Voltage at Different Temperatures (°C)