SLVSH27A april   2023  – june 2023 ESD451

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Revision History
  6. 5Pin Configuration and Functions
  7. 6Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—JEDEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  8. 7Application and Implementation
    1. 7.1 Application Information
  9. 8Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DPL|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics

At TA=25℃ (unless otherwise noted) (1)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO <100 nA, across operating temperature range -5.5 5.5 V
ILEAK Reverse leakage current VIO = 5.5 V, IO to GND or GND to IO 5 50 nA
VBRR Break-down voltage IIO = 1 mA, IO to GND 7 8 9 V
VBRF Break-down voltage IIO = 1 mA, GND to IO 7 8 9 V
VHOLD Holding voltage (2) TLP, IO to GND or GND to IO 7.2 V
VCLAMP Clamping voltage with TLP IPP = 1 A, TLP, IO to GND 7.6 V
IPP = 5 A, TLP, IO to GND 8.2 V
IPP = 16 A, TLP, IO to GND 10.4 V
IPP =1 A, TLP, GND to IO 7.6 V
IPP =5 A, TLP, GND to IO 8.2 V
IPP =16 A, TLP, GND to IO 10.4 V
Clamping voltage with surge strike (4) IPP = 6 A, tp = 8/20 µs , IO to GND 9.5 V
IPP = 6 A, tp = 8/20 µs , GND to IO 9.5 V
RDYN Dynamic resistance (3) IO to GND 0.19 Ω
GND to IO
CL Line capacitance VIO = 0 V;  ƒ = 1 MHz, Vpp = 30 mV, IO to GND or IO to GND 0.5 pF
(1) Typical parameters are measured at 25℃
(2) Transition line pulse with 100 ns width and 10 ns rise and fall time
(3) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A
(4) Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5