SLVSI08 August   2024 ESD601-Q1

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings - AEC Specifications
    3. 5.3 ESD Ratings - IEC Specifications
    4. 5.4 ESD Ratings - ISO Specifications
    5. 5.5 Recommended Operating Conditions
    6. 5.6 Thermal Information
    7. 5.7 Electrical Characteristics
    8. 5.8 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Receiving Notification of Documentation Updates
    2. 7.2 Support Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.7 Electrical Characteristics

At TA = 25°C unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO < 10 nA -18 18 V
ILEAK Leakage current at VRWM VIO = ±18 V, I/O to GND 1 10 nA
VBR Breakdown voltage, I/O to GND (1) IIO = ±10 mA 19 21 V
VCLAMP Surge clamping voltage, tp = 8/20 µs (2) IPP = 2.7 A, I/O to GND 33 V
IPP = 2.7 A, GND to I/O 33 V
TLP clamping voltage, tp = 100 ns (3) IPP = ±8 A (100 ns TLP), I/O to GND 29 V
IPP = ±16 A (100 ns TLP), I/O to GND 36 V
RDYN Dynamic resistance (4) I/O to GND 0.9 Ω
GND to I/O 0.9
CLINE Line capacitance, IO to GND VIO = 0 V, f = 1 MHz 0.3 0.5 pF
(1) VBR is defined as the voltage obtained at 10 mA when sweeping the voltage up, before the device latches into the snapback state
(2) Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5
(3) Non-repetitive square wave current pulse, Transmission Line Pulse (TLP);  ANSI / ESD STM5.5.1-2008
(4) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A