SLVSH15 November   2023 ESD852 , ESD862

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings—JEDEC Specification
    3. 5.3 ESD Ratings—IEC Specification
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics – ESD852
    8. 5.8 Typical Characteristics – ESD862
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBZ|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.6 Electrical Characteristics

over TA = 25°C (unless otherwise noted)(1)
PARAMETERTEST CONDITIONSDEVICEMINTYPMAXUNIT
VRWMReverse stand-off voltage–36

36

V
VBRF

Forward breakdown voltage(1)(2)

IIO = 10 mA, IO to GND

37.8

40

44.2

V
VBRRReverse breakdown voltage (1)(2)IIO = –10 mA, IO to GND–44.2

-40

–37.8V
VCLAMPClamping voltage(3)IPP = 1 A, tp = 8/20 µs, IO to GNDESD852

43

V
IPP = 4.3 A, tp = 8/20 µs, from IO to GNDESD852

61

V
IPP = 1 A, tp = 8/20 µs, from IO to GNDESD862

47

V
IPP = 3.1 A, tp = 8/20 µs, from IO to GNDESD862

61

V
VCLAMPClamping voltage(3)IPP = 16 A, TLP, IO to GND or GND to IO

ESD852

63

V

ESD862

64

V

ILEAKLeakage currentVIO = ±36 V, IO to GND

5

50nA
RDYNDynamic resistance(4)IO to GND and GND to IOESD8520.49Ω
ESD8620.49Ω
CLLine capacitance(1)VIO = 0 V, f = 1 MHz, Vpp = 30 mVESD852

2.8

3.5

pF
ESD862

2.6

2.9pF
(1) Measured from IO to GND on each channel.
(2) VBRF and VBRR are defined as the voltage when ± 10 mA is applied in the positive or negative direction respectively.
(3) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
(4) Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008