SLVSEG9C May   2018  – February 2024 ESDS311 , ESDS312 , ESDS314

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings - JEDEC Specifications
    3. 5.3 ESD Ratings - IEC Specifications
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 IEC 61000-4-4 EFT Protection
    4. 6.4 Device Functional Modes
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Signal Range
        2. 7.2.2.2 Operating Frequency
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Typical Characteristics

GUID-FFDEE66E-0313-4AB8-B1D1-D6E4BD142FA2-low.gifFigure 5-1 Clamping Voltage vs. Peak Pulse Current (tp= 8/20µs), Any IO Pin to GND
GUID-3F618C8B-2543-4C63-B512-B6BD749806D2-low.gifFigure 5-3 Surge Current, Clamping Voltage and Power Curve (tp = 8/20µs), Any IO Pin to GND
GUID-5C0FE08E-0BEE-4522-828C-3A4642A5445A-low.gifFigure 5-5 TLP I-V Curve, IO to GND, tp = 100ns
GUID-4D8D2278-3CF2-4390-B353-D5A28C6CCF06-low.gifFigure 5-7 +8kV IEC 61000-4-2 Clamping Voltage Waveform
GUID-2D70170E-9319-4D2F-AD02-47DFAED18FAA-low.gifFigure 5-9 DC Leakage vs. Ambient Temperature, Bias Voltage = 3.6V
GUID-7FB0F5D5-5407-43F0-9C63-6A10103FF13B-low.gifFigure 5-11 Surge Power Derating with Respect To Ambient Temperature
GUID-4FAC2249-A249-4726-98D6-5AA402439AF3-low.gifFigure 5-2 Clamping Voltage vs. Peak Pulse Current (tp= 8/20µs), GND to Any IO Pin
GUID-57AF989F-5303-4B8D-97DE-836484E12788-low.gifFigure 5-4 DC I-V Curve
GUID-3DE9EEB9-A86E-4784-B029-71C027A3B923-low.gifFigure 5-6 TLP I-V Curve, IO to GND Negative, tp=100ns
GUID-737A473B-4C39-46BC-8453-7EF514D7E72E-low.gifFigure 5-8 -8kV IEC 61000-4-2 Clamping Voltage Waveform
GUID-E2B073EB-2DE5-40CD-B7E0-F9D4CC0D510A-low.gifFigure 5-10 Capacitance vs. Bias Voltage at 25 °C
GUID-01CFA782-07F0-4E63-AA8E-2294DE3A78BD-low.gifFigure 5-12 Differential Insertion Loss