SBOS027C September   2000  – September 2022 INA118

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Noise Performance
      2. 8.4.2 Input Common-Mode Range
      3. 8.4.3 Input Protection
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Setting the Gain
        2. 9.2.2.2 Dynamic Performance
        3. 9.2.2.3 Offset Trimming
        4. 9.2.2.4 Input Bias Current Return Path
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Low-Voltage Operation
      2. 9.3.2 Single-Supply Operation
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4 Thermal Information

THERMAL METRIC(1)INA118UNIT
D (SOIC)P (PDIP)
8 PINS8 PINS
RθJAJunction-to-ambient thermal resistance11548°C/W
RθJC(top)Junction-to-case (top) thermal resistance6237°C/W
RθJBJunction-to-board thermal resistance5925°C/W
ψJTJunction-to-top characterization parameter1414°C/W
ψJBJunction-to-board characterization parameter5825°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistanceN/AN/A°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.