INA12x-HT Precision, Low-Power Instrumentation Amplifiers
1 Features
- Low Offset Voltage: 25 uV Typical
- Low Input Bias Current: 50 nA Typical (1)
- High CMR: 95 dB Typical(1)
- Inputs Protected to ±40 V
- Wide Supply Range: ±2.25 V to ±18 V
- Low Quiescent Current: 2 mA Typical(1)
2 Applications
- Bridge Amplifiers
- Thermocouple Amplifiers
- RTD Sensor Amplifiers
- Medical Instrumentation
- Data Acquisition
- Supports Extreme Temperature Applications:
- Controlled Baseline
- One Assembly/Test Site
- One Fabrication Site
- Available in Extreme Temperature Ranges
(–55°C to 210°C) (1) - Extended Product Life Cycle
- Extended Product-Change Notification
- Product Traceability
3 Description
The INA128-HT and INA129-HT are low-power, general-purpose instrumentation amplifiers offering excellent accuracy. The versatile three-operational-amplifier design and small size make them ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain. A single external resistor sets any gain from 1 to 10000. The INA128-HT provides an industry-standard gain equation; the INA129-HT gain equation is compatible with the AD620.
The INA128-HT and INA129-HT are laser trimmed for very low offset voltage (25 μV Typ) and high common-mode rejection (93 dB at G ≥ 100). These devices operate with power supplies as low as ±2.25 V, and quiescent current of 2 mA, typically. Internal input protection can withstand up to ±40 V without damage.
Texas Instruments' high-temperature products use highly optimized silicon (die) solutions with design and process enhancements to maximize performance over extended temperatures.
The INA129-HT is available in 8-pin ceramic DIP and 8-pin ceramic surface-mount packages, specified for the –55°C to 210°C temperature range. The INA128-HT is available in an 8-pin SOIC-8 surface-mount package, specified for the –55°C to 175°C temperature range.
Device Information(1)
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| INA128-HT | SOIC (8) | 4.90 mm × 3.91 mm |
| INA129-HT | CFP (8) | 6.90 mm × 5.65 mm |
| CDIP SB (8) | 11.81 mm × 7.49 mm |
- For all available packages, see the orderable addendum at the end of the data sheet.
4 Simplified Schematic
5 Revision History
Changes from E Revision (July 2013) to F Revision
- Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
- Deleted Ordering Information table; for all available packages, see the package option addendum Go
6 Pin Configuration and Functions
Pin Functions
| PIN | I/O | DESCRIPTION | |
|---|---|---|---|
| NAME | NO. | ||
| Ref | 5 | I | Output voltage reference |
| RG | 1, 8 | O | Gain resistor connection |
| V+ | 7 | Power | Positive power supply voltage from 2.25 V to 18 V |
| V– | 4 | Power | Negative power supply voltage from –2.25 V to –18 V |
| V+IN | 3 | I | Non-inverting input voltage |
| V–IN | 2 | I | Inverting input voltage |
| VO | 6 | O | Output voltage |
Bare Die Information
| DIE THICKNESS | BACKSIDE FINISH | BACKSIDE POTENTIAL | BOND PAD METALLIZATION COMPOSITION |
|---|---|---|---|
| 15 mils | Silicon with backgrind | GND | Al-Si-Cu (0.5%) |
Bond Pad Coordinates in Mils
| DESCRIPTION | PAD NUMBER | a | b | c | d |
|---|---|---|---|---|---|
| NC | 1 | –57.4 | –31.1 | –53.3 | –27 |
| V-IN | 2 | –9.85 | –31.4 | –5.75 | –27.3 |
| V+IN | 3 | 25.05 | –31.4 | 29.15 | –27.3 |
| V- | 4 | 56.2 | –34.3 | 60.3 | –30.2 |
| Ref | 5 | 53.75 | –17.6 | 57.85 | –11 |
| VO | 6 | 50.35 | 27.8 | 56.95 | 31.9 |
| V+ | 7 | 7.75 | 30.2 | 11.85 | 34.3 |
| NC | 8 | –57.4 | 28.4 | –53.3 | 32.5 |
| RG(1) | 9 | –57.4 | 13.4 | –53.3 | 20 |
| RG(1) | 10 | –57.5 | 2.7 | –53.4 | 9.3 |
| RG(1) | 11 | –57.5 | –7.9 | –53.4 | –1.3 |
| RG(1) | 12 | –57.4 | –18.6 | –53.3 | –12 |
