SGLS185F September 2003 – May 2016 INA139-Q1 , INA169-Q1
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | MAX | UNIT | ||||
---|---|---|---|---|---|---|
Voltage | Supply, V+ | INA139-Q1 | –0.3 | 60 | V | |
INA169-Q1 | –0.3 | 75 | V | |||
Analog inputs, VIN+, VIN– | Common mode | INA139-Q1 | –0.3 | 60 | V | |
INA169-Q1 | –0.3 | 75 | V | |||
Differential, (VIN+) – (VIN–) | –40 | 2 | V | |||
Analog output, OUT | –0.3 | 40 | V | |||
Temperature | Operating, TA | –55 | 125 | °C | ||
Junction, TJ | 150 | °C | ||||
Storage, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Supply voltage, V+ | INA139-Q1 | 2.7 | 5 | 40 | V |
INA169-Q1 | 2.7 | 5 | 60 | V | |
Common mode voltage | INA139-Q1 | 2.7 | 12 | 40 | V |
INA169-Q1 | 2.7 | 12 | 60 | V | |
Operating temperature, TA | –40 | 125 | °C |
THERMAL METRIC(1) | INA1x9-Q1 | UNIT | |
---|---|---|---|
PW (TSSOP) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 179.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 62.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 107.7 | °C/W |
ψJT | Junction-to-top characterization parameter | 7 | °C/W |
ψJB | Junction-to-board characterization parameter | 106 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | INA139-Q1 | INA169-Q1 | UNIT | ||||||
---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | |||||
INPUT | ||||||||||
Full-scale sense voltage | VSENSE = VIN+ − VIN− | 100 | 500 | 100 | 500 | mV | ||||
Common-mode rejection | VIN+ = 2.7 V to 40 V, VSENSE = 50 mV | 100 | 115 | dB | ||||||
VIN+ = 2.7 V to 60 V, VSENSE = 50 mV | 100 | 120 | ||||||||
Offset voltage(1) RTI | ±0.2 | ±2 | ±0.2 | ±2 | mV | |||||
Offset voltage vs temperature | 1 | 1 | μV/°C | |||||||
Offset voltage vs power supply (V+) | VIN+ = 2.7 V to 40 V, VSENSE = 50 mV | 0.5 | 10 | μV/V | ||||||
VIN+ = 2.7 V to 60 V, VSENSE = 50 mV | 0.1 | 10 | ||||||||
Input bias current | 10 | 10 | μA | |||||||
OUTPUT | ||||||||||
Transconductance | VSENSE = 10 mV to 150 mV | 980 | 1000 | 1020 | 980 | 1000 | 1020 | μA/V | ||
Transconductance versus temperature | VSENSE = 100 mV | 10 | 10 | nA/°C | ||||||
Nonlinearity error | VSENSE = 10 mV to 150 mV | ±0.01% | ±0.2% | ±0.01% | ±0.2% | |||||
Total output error | VSENSE = 100 mV | ±0.5% | ±2% | ±0.5% | ±2% | |||||
Output impedance | 1 || 5 | 1 || 5 | GΩ || pF | |||||||
Voltage output swing to power supply (V+) | (V+) − 0.9 | (V+) − 1.2 | (V+) − 0.9 | (V+) − 1.2 | V | |||||
Voltage output swing to common mode, VCM | VCM − 0.6 | VCM − 1 | VCM − 0.6 | VCM − 1 | V | |||||
FREQUENCY RESPONSE | ||||||||||
Bandwidth | RL = 10 kΩ | 440 | 440 | kHz | ||||||
RL = 20 kΩ | 220 | 220 | ||||||||
Settling time (0 1%) | 5 V step, RL = 10 kΩ | 2.5 | 2.5 | μs | ||||||
5 V step, RL = 20 kΩ | 5 | 5 | ||||||||
NOISE | ||||||||||
Output-current noise density | 20 | 20 | pA/√Hz | |||||||
Total output-current noise | BW = 100 kHz | 7 | 7 | nA RMS | ||||||
POWER SUPPLY | ||||||||||
Quiescent current | VSENSE = 0 V, IO = 0 mA | 60 | 125 | 60 | 125 | μA |