SBOS181F December 2000 – February 2017 INA139 , INA169
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage, VS | INA139 | –0.3 | 60 | V |
INA169 | –0.3 | 75 | V | |
Analog inputs, INA139 | Common-mode (2) | –0.3 | 60 | V |
Differential (VIN+) – (VIN–) | –40 | 2 | V | |
Analog inputs, INA169 | Common-mode (2) | –0.3 | 75 | V |
Differential (VIN+) – (VIN–) | –40 | 2 | V | |
Analog input, out (2) | –0.3 | 40 | V | |
Input current into any pin | 10 | mA | ||
Operating temperature, TA | –55 | 125 | °C | |
Junction temperature, TJ | 150 | °C | ||
Storage temperature, Tstg | –65 | 125 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±1000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
V+ | Power-supply voltage | INA139 | 2.7 | 5 | 40 | V |
INA169 | 2.7 | 5 | 60 | |||
Common-mode voltage | INA139 | 2.7 | 12 | 40 | V | |
INA169 | 2.7 | 12 | 60 |
THERMAL METRIC(1) | INA1x9 | UNIT | |
---|---|---|---|
DBV (SOT-23) | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 168.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 73.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 28.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 2.5 | °C/W |
ψJB | Junction-to-board characterization parameter | 27.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
INPUT | |||||||
Full-scale sense voltage | VSENSE = VIN+ – VIN– | 100 | 500 | mV | |||
Common-mode input range | INA139 | 2.7 | 40 | V | |||
INA169 | 2.7 | 60 | |||||
Common-mode rejection | INA139:
VIN+ = 2.7 V to 40 V, VSENSE = 50 mV |
99 | 115 | dB | |||
INA169: VIN+ = 2.7 V to 60 V, VSENSE = 50 mV |
100 | 120 | dB | ||||
Offset voltage (1) RTI | INA139 | ±0.2 | ±1.5 | mV | |||
INA169 | ±0.2 | ±1 | |||||
vs. temperature | TMIN to TMAX | 1 | µV/°C | ||||
vs power supply (V+) | INA139: V+ = 2.7 V to 40 V, VSENSE = 50 mV |
0.5 | 10 | µV/V | |||
INA169: V+ = 2.7 V to 60 V, VSENSE = 50 mV |
0.1 | 10 | µV/V | ||||
Input bias current | 10 | µA | |||||
OUTPUT | |||||||
Transconductance vs temperature | VSENSE = 10 mV – 150 mV | 990 | 1000 | 1010 | µA/V | ||
VSENSE = 10 mV | 10 | nA/°C | |||||
Nonlinearity error | VSENSE = 10 mV to 150 mV | INA139 | ±0.01% | ±0.13% | |||
INA169 | ±0.01% | ±0.1% | |||||
Total output error | VSENSE = 100 mV | ±0.5% | ±2% | ||||
Output impedance | 1 || 5 | GΩ || pF | |||||
Voltage output | Swing to power supply, V+ | (V+) – 0.9 | (V+) – 1.2 | V | |||
Swing to common-mode, VCM | VCM – 0.6 | VCM – 1 | |||||
FREQUENCY RESPONSE | |||||||
Bandwidth | ROUT = 10 kΩ | 440 | kHz | ||||
ROUT = 20 kΩ | 220 | kHz | |||||
Settling time (0.1%) | 5-V step, ROUT = 10 kΩ | 2.5 | µs | ||||
5-V step, ROUT = 20 kΩ | 5 | µs | |||||
NOISE | |||||||
Output-current noise density | 20 | pA/√Hz | |||||
Total output-current noise | BW = 100 kHz | 7 | nA RMS | ||||
POWER SUPPLY | |||||||
Operating range, V+ | INA139 | 2.7 | 40 | V | |||
INA169 | 2.7 | 60 | V | ||||
Quiescent current | VSENSE = 0, IO = 0 | 60 | 125 | µA | |||
TEMPERATURE RANGE | |||||||
Specification, TMIN to TMAX | INA139 | –40 | 125 | °C | |||
INA169 | –40 | 85 | °C | ||||
Operating | –55 | 125 | °C | ||||
Storage | –65 | 150 | °C | ||||
Thermal resistance, θJA | 200 | °C/W |