SBOS307 Data sheet

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

	MIN	MAX	UNIT
Supply Voltage		18	V
Analog Inputs, V_IN+, V_IN−	–18	18	V
Differential (V_IN+) – (V_IN−)	–18	18	V
Common-Mode⁽²⁾	–16	80	V
Analog Output, Out⁽²⁾	GND – 0.3	(V+) + 0.3	V
Input Current Into Any Pin⁽²⁾		5	mA
Operating Temperature	–55	150	°C
Junction Temperature		150	°C
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA.

7.2 ESD Ratings

			VALUE		UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	±4000		V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	±1000		V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V_CM	Common-mode input voltage		12		V
V+	Operating supply voltage		12		V
T_A	Operating free-air temperature	-40		125	ºC

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		INA19x	UNIT
		DBV (SOT-23)
		5 PINS
R_θJA	Junction-to-ambient thermal resistance	221.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	144.7
R_θJB	Junction-to-board thermal resistance	49.7
ψ_JT	Junction-to-top characterization parameter	26.1
ψ_JB	Junction-to-board characterization parameter	49.0

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

All specifications at T_A = 25°C, V_S = 12 V, V_IN+ = 12 V, and V_SENSE = 100 mV, unless otherwise noted.

PARAMETER		TEST CONDITIONS		TA = 25°C			T_A = −40°C to +125°C			UNIT
PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	MIN	TYP	MAX	UNIT
INPUT
V_SENSE	Full-Scale Input Voltage	V_SENSE = V_IN+ − V_IN−			0.15	(V_S – 0.2)/Gain	–16			V
V_CM	Common-Mode Input Range					80	–16			V
CMR	Common-Mode Rejection	V_IN+ = −16 V to 80 V		80	94					dB
	Common-Mode Rejection, Over Temperature	V_IN+ = 12 V to 80 V					100	120		dB
V_OS	Offset Voltage, RTI				±0.5	2				mV
	Offset Voltage, RTI Over Temperature							0.5	3	mV
dV_OS/dT	Offset Voltage, RTI vs Temperature							2.5		μV/°C
PSR	Offset Voltage, RTI vs Power Supply	V_S = 2.7 V to 18 V, V_IN+ = 18 V						5	100	μV/V
I_B	Input Bias Current, V_IN− pin							±8	±16	μA
OUTPUT (V_SENSE ≥ 20mV)
G	Gain	INA193, INA196			20					V/V
		INA194, INA197			50					V/V
		INA195, INA198			100					V/V
	Gain Error	V_SENSE = 20 mV to 100 mV, T_A = 25°C			±0.2%	±1%
	Gain Error Over Temperature	V_SENSE = 20 mV to 100 mV							±2
	Total Output Error⁽¹⁾	V_SENSE = 100 mV			±0.75%	±2.2%
	Total Output Error Over Temperature							±1%	±3%
	Nonlinearity Error	V_SENSE = 20 mV to 100 mV			±0.002%	±0.1%
R_O	Output Impedance				1.5					Ω
	Maximum Capacitive Load	No Sustained Oscillation			10					nF
	Output⁽⁴⁾	All Devices	−16 V ≤ V_CM < 0 V, V_SENSE < 20 mV		300					mV
		All Devices	V_S < V_CM ≤ 80 V, V_SENSE < 20 mV		300					mV
		INA193, INA196	0 V ≤ V_CM ≤ V_S, V_S = 5 V, V_SENSE < 20 mV			0.4				V
		INA194, INA197				1				V
		INA195, INA198				2				V
VOLTAGE OUTPUT⁽²⁾ (R_L = 100 kΩ to GND)
	Swing to V+ Power-Supply Rail							(V+) – 0.1	(V+) – 0.2	V
	Swing to GND⁽³⁾							(V_GND) + 3	(V_GND) + 50	mV
FREQUENCY RESPONSE
BW	Bandwidth	INA193, INA196	C_LOAD = 5 pF		500					kHz
		INA194, INA197			300					kHz
		INA195, INA198			200					kHz
	Phase Margin	C_LOAD < 10 nF			40
SR	Slew Rate				1					V/μs
t_S	Settling Time (1%)	V_SENSE = 10 mV to 100 mV_PP, C_LOAD = 5 pF			2					μs
NOISE, RTI
	Voltage Noise Density				40					nV/√Hz
POWER SUPPLY
V_S	Operating Range						2.7		18	V
I_Q	Quiescent Current	V_OUT = 2 V			700	900				μA
	Quiescent Current Over Temperature	V_SENSE = 0 mV						370	950	μA
TEMPERATURE RANGE
	Specified Temperature Range			–40		125				°C
	Operating Temperature Range			–55		150				°C
	Storage Temperature Range			–65		150				°C
θ_JA	Thermal Resistance, SOT23				200					°C/W