INA217 Low-Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017
- SBOS247C June 2002 – November 2015 INA217
  
  PRODUCTION DATA.

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DATA SHEET

INA217 Low-Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017

1 Features

Low Noise: 1.3 nV/√Hz at 1 kHz
Low THD+N: 0.004% at 1 kHz, G = 100
Wide Bandwidth: 800 kHz at G = 100
Wide Supply Range: ±4.5 V to ±18 V
High CMR: > 100 dB
Gain Set With External Resistor
DIP-8 and SOL-16 Widebody Packages

2 Applications

Professional Microphone Preamps
Moving-coil Transducer Amplifiers
Differential Receivers
Bridge Transducer Amplifiers

3 Description

The INA217 device is a low-noise, low-distortion, monolithic instrumentation amplifier. Current-feedback circuitry allows the INA217 device to achieve wide bandwidth and excellent dynamic response over a wide range of gain. The INA217 device is ideal for low-level audio signals such as balanced low-impedance microphones. Many industrial, instrumentation, and medical applications also benefit from its low noise and wide bandwidth.

Unique distortion cancellation circuitry reduces distortion to extremely low levels, even in high gain. The INA217 device provides near-theoretical noise performance for 200-Ω source impedance. The INA217 device features differential input, low noise, and low distortion that provides superior performance in professional microphone amplifier applications.

The INA217device features wide supply voltage, excellent output voltage swing, and high output current drive, making it an optimal candidate for use in high-level audio stages.

The INA217 device is available in the same DIP-8 and SOL-16 wide body packages and pinouts as the SSM2017. For a smaller package, see the INA163 device in SO-14 narrow. The INA217 device is specified over the temperature range of –40°C to 85°C.

Device Information⁽¹⁾

PART NUMBER	PACKAGE	BODY SIZE (NOM)
INA217	SOIC (16)	10.30 mm × 7.50 mm
INA217	PDIP (8)	9.81 mm × 6.35 mm

For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Schematic

4 Revision History

Changes from B Revision (February 2005) to C Revision

Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go

5 Pin Configuration and Functions

DW Package

16-Pin SOIC

Top View

P Package

8-Pin PDIP

Top View

Pin Functions

PIN		I/O	DESCRIPTION
NAME	NO.	I/O	DESCRIPTION
PDIP
NC	1	—	No internal connection
RG1	2	I	Gain setting pin, for gains greater than one, connect an external resistor between pins 2 and 15
NC	3	—	No internal connection
VIN–	4	I	Inverting input
VIN+	5	I	Non-inverting input
NC	6	—	No internal connection
V–	7	I	negative power supply
NC	8	—	No internal connection
NC	9	—	No internal connection
REF	10	I	Reference input
VOUT	11	O	Output
NC	12	—	No internal connection
V+	13	I	Positive power supply
NC	14	—	No internal connection
RG2	15	I	Gain setting pin, for gains greater than one, connect an external resistor between pins 2 and 15
NC	16	—	No internal connection
SOIC
RG1	1	I	Gain setting pin, for gains greater than one, connect an external resistor between pins 1 and 8
VIN–	2	I	Inverting input
VIN+	3	I	Non-inverting input
V–	4	I	negative power supply
REF	5	I	Reference input
VOUT	6	O	Output
V+	7	I	Positive power supply
RG2	8	I	Gain setting pin, for gains greater than one, connect an external resistor between pins 2 and 15

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

			MIN	MAX	UNIT
V+ to V–	Supply voltage			±18	V
	Signal input terminals	Voltage⁽²⁾	(V–) – 0.5	(V+) + 0.5	V
	Signal input terminals	Current⁽²⁾		10	mA
	Output short circuit⁽³⁾		Continuous
	Operating temperature		–55	125	°C
	Junction temperature			300	°C
T_stg	Storage temperature		–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails should be current limited to 10 mA or less.

(3) Short-circuit to ground, one amplifier per package.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±4000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V+ to V–	Supply voltage	±4.5	±15	±18	V
T_A	Ambient Temperature	-40	25	85	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		INA217		UNIT
		DW (SOIC)	P (PDIP)
		16 PINS	8 PINS
R_θJA	Junction-to-ambient thermal resistance	64.3	46.2	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	24.9	34.5	°C/W
R_θJB	Junction-to-board thermal resistance	29.4	23.5	°C/W
ψ_JT	Junction-to-top characterization parameter	3.3	11.7	°C/W
ψ_JB	Junction-to-board characterization parameter	28.8	23.3	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: V_S = ±15 V

T_A = 25°C, R_L = 2 kΩ, V_S = ±15 V, unless otherwise noted.

PARAMETER		TEST CONDITIONS	T_A = 25°C			UNIT
PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
GAIN EQUATION⁽¹⁾				G = 1 + 10k/R_G
Range				1 to 10000		V/V
Gain Error	G = 1			±0.1%	±0.25%
	G = 10			±0.2%	±0.7%
	G = 100			±0.2%
	G = 1000			±0.5%
GAIN TEMPERATURE DRIFT COEFFICIENT
	G = 1	T_A = –40°C to 85°C		±3	±10	ppm/°C
	G > 10	T_A = –40°C to 85°C		±40	±100	ppm/°C
Nonlinearity	G = 1			±0.0003		% of FS
Nonlinearity	G = 100			±0.0006		% of FS
INPUT STAGE NOISE
Voltage Noise	f_O = 1 kHz	R_SOURCE = 0 Ω		1.3		nV/√Hz
	f_O = 100 Hz			1.5		nV/√Hz
	f_O = 10 Hz			3.5		nV/√Hz
Current Noise,	f_O = 1 kHz			0.8		pA/√Hz
OUTPUT STAGE NOISE
Voltage Noise,	f_O = 1 kHz			90		nV/√Hz
INPUT OFFSET VOLTAGE
Input Offset Voltage		V_CM = V_OUT = 0 V		50 + 2000/G	250 + 5000/G	µV
	vs Temperature	T_A = –40°C to 85°C		1 + 20/G		µV/°C
	vs Power Supply	V_S = ±4.5 V to ±18 V		1 + 50/G	3 + 200/G	µV/V
INPUT VOLTAGE RANGE
Common-Mode Voltage Range		V_IN+ – V_IN– = 0V	(V+) – 4	(V+) – 3		V
Common-Mode Voltage Range		V_IN+ – V_IN– = 0V	(V–) + 4	(V–) + 3		V
Common-Mode Rejection	G = 1	V_CM = ±11 V, R_SRC = 0 Ω	70	80		dB
Common-Mode Rejection	G = 100		100	116		dB
INPUT BIAS CURRENT
Initial Bias Current				2	12	µA
	vs Temperature	T_A = –40°C to 85°C		10		nA/°C
Initial Offset Current				0.1	1	µA
	vs Temperature	T_A = –40°C to 85°C		0.5		nA/°C
INPUT IMPEDANCE
		Differential		60 \|\| 2		MΩ \|\| pF
		Common-Mode		60 \|\| 2		MΩ \|\| pF
DYNAMIC RESPONSE
Bandwidth, Small Signal, –3d B
	G = 1			3.4		MHz
	G = 100			800		kHz
Slew Rate				15		V/µs
THD+Noise, f = 1 kHz		G = 100		0.004%
Settling Time	0.1%	G = 100, 10V Step		2		µs
Settling Time	0.01%	G = 100, 10V Step		3.5		µs
Overload Recovery		50% Overdrive		1		µs
OUTPUT
Voltage		R_L to GND	(V+) – 2 (V–) + 2	(V+) – 1.8 (V–) + 1.8		V V
Load Capacitance Stability				1000		pF
Short Circuit Current		Continuous-to-Common		±60		mA
POWER SUPPLY
Rated Voltage				±15		V
Voltage Range			±4.5		±18	V
Current, Quiescent		I_O = 0 mA		±10	±12	mA
TEMPERATURE RANGE
Specification			–40		85	°C
Operating			–40		125	°C

(1) Gain accuracy is a function of external R_G.

6.6 Typical Characteristics

At T_A = 25°C, V_S = ±15 V, R_L = 2 kΩ, unless otherwise noted.

Figure 1. Gain vs Frequency

Figure 3. Noise Voltage (RTI) vs Frequency

Figure 5. CMR vs Frequency

Figure 7. Output Voltage Swing vs Output Current

G = 1

Figure 9. Small-Signal Transient Response

G = 1

Figure 11. Large-Signal Transient Response

Figure 2. THD+N vs Frequency

Figure 4. Current Noise Spectral Density

Figure 6. Power-Supply Rejection vs Frequency

Figure 8. Settling Time vs Gain

G = 100

Figure 10. Small-Signal Transient Response

G = 100

Figure 12. Large-Signal Transient Response

7 Detailed Description

7.1 Overview

The INA217 is a classical three-amp instrumentation amplifier designed for audio applications. Featuring low noise and low distortion the INA217 is ideally suited for amplifying low level audio signals. With a wide supply voltage, wide output voltage swing, and high output current drive the INA217 is also ideally suited for processing high level audio signals. Specified from –40°C to 85°C the INA217 is well suited for industrial applications.

7.2 Functional Block Diagram

7.3 Feature Description

7.3.1 Basic Connections

Figure 13 shows the basic connections required for operation. Power supplies should be bypassed with 0.1-μF tantalum capacitors near the device pins. The output Reference (pin 5) should be a low-impedance connection. Resistance of a few Ωs in series with this connection will degrade the common-mode rejection of the INA217.

INA217 basic_circuit_connections_sbos247.gif

Figure 13. Basic Circuit Connections

7.3.2 Gain-Set Resistor

Gain is set with an external resistor, R_G, as shown in Figure 13. The two internal 5-kΩ feedback resistors are laser-trimmed to 5-kΩ within approximately ±0.2%. Equation 1 shows the gain equation for the INA217.

Equation 1. INA217 Eq1_G_sbos247.gif

The temperature coefficient of the internal 5-kΩ resistors is approximately ±25 ppm/°C. Accuracy and TCR of the external R_G will also contribute to gain error and temperature drift. These effects can be inferred from the gain equation. Make a short, direct connection to the gain set resistor, R_G. Avoid running output signals near these sensitive input nodes.

7.3.3 Noise Performance

The INA217 provides very low noise with low-source impedance. Its 1.3-nV/√Hz voltage noise delivers near-theoretical noise performance with a source impedance of 200 Ω. The input stage design used to achieve this low noise results in relatively high input bias current and input bias current noise. As a result, the INA217 may not provide the best noise performance with a source impedance greater than 10 kΩ. For source impedance greater than 10 kΩ, other instrumentation amplifiers may provide improved noise performance.

7.3.4 Input Considerations

Very low source impedance (less than 10 Ω) can cause the INA217 to oscillate. This depends on circuit layout, signal source, and input cable characteristics. An input network consisting of a small inductor and resistor, as shown in Figure 14, can greatly reduce any tendency to oscillate. This is especially useful if a variety of input sources are to be connected to the INA217. Although not shown in other figures, this network can be used as needed with all applications shown.

INA217 input_stabilization_network_sbos247.gif

Figure 14. Input Stabilization Network

7.3.5 Offset Voltage Trim

A variable voltage applied to pin 5, as shown in Figure 15, can be used to adjust the output offset voltage. A voltage applied to pin 5 is summed with the output signal. An operational amplifier connected as a buffer is used to provide a low impedance at pin 5 to assure good common-mode rejection.

INA217 offset_voltage_adjustment_circuit_sbos247.gif

Figure 15. Offset Voltage Adjustment Circuit

7.4 Device Functional Modes

The INA217 has a single functional mode of operation. The mode is operational when the power supply voltage exceeds ±4.5 V. The maximum power supply voltage is ±18 V. The INA217 is specified over the temperature range from –40°C to 85°C and is operational to 125°C.