SBOS547A June 2011 – August 2015 INA226
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VVS | Supply voltage | 6 | V | |
Analog Inputs, IN+, IN– | Differential (VIN+ – VIN-)(2) | –40 | 40 | V |
Common-Mode (VIN+ + VIN-) / 2 | –0.3 | 40 | ||
VVBUS | –0.3 | 40 | V | |
VSDA | GND – 0.3 | 6 | V | |
VSCL | GND – 0.3 | VVS + 0.3 | V | |
IIN | Input current into any pin | 5 | mA | |
IOUT | Open-drain digital output current | 10 | mA | |
TJ | Junction temperature | 150 | °C | |
Tstg | Storage temperature range | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2500 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±1000 | |||
Machine model (MM) | ±150 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VCM | Common-mode input voltage | 12 | V | ||
VVS | Operating supply voltage | 3.3 | V | ||
TA | Operating free-air temperature | –40 | 125 | °C |
THERMAL METRIC(1) | INA226 | UNIT | |
---|---|---|---|
DGS (VSSOP) | |||
10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 171.4 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 42.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 91.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 1.5 | °C/W |
ψJB | Junction-to-board characterization parameter | 90.2 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
INPUT | ||||||
Shunt voltage input range | –81.9175 | 81.92 | mV | |||
Bus voltage input range(1) | 0 | 36 | V | |||
CMRR | Common-mode rejection | 0 V ≤ VIN+ ≤ 36 V | 126 | 140 | dB | |
VOS | Shunt offset voltage, RTI(2) | ±2.5 | ±10 | μV | ||
Shunt offset voltage, RTI(2) vs temperature | –40°C ≤ TA ≤ 125°C | 0.02 | 0.1 | μV/°C | ||
PSRR | Shunt offset voltage, RTI(2) vs Power supply | 2.7 V ≤ VS ≤ 5.5 V | 2.5 | μV/V | ||
VOS | Bus offset voltage, RTI(2) | ±1.25 | ±7.5 | mV | ||
Bus offset voltage, RTI(2) vs temperature | –40°C ≤ TA ≤ 125°C | 10 | 40 | μV/°C | ||
PSRR | Bus offset voltage, RTI(2) vs power supply | 0.5 | mV/V | |||
IB | Input bias current (IIN+, IIN– pins) | 10 | μA | |||
VBUS input impedance | 830 | kΩ | ||||
Input leakage (3) | (IN+ pin) + (IN– pin), Power-down mode |
0.1 | 0.5 | μA | ||
DC ACCURACY | ||||||
ADC native resolution | 16 | Bits | ||||
1 LSB step size | Shunt voltage | 2.5 | μV | |||
Bus voltage | 1.25 | mV | ||||
Shunt voltage gain error | 0.02% | 0.1% | ||||
Shunt voltage gain error vs temperature | –40°C ≤ TA ≤ 125°C | 10 | 50 | ppm/°C | ||
Bus voltage gain error | 0.02% | 0.1% | ||||
Bus voltage gain error vs temperature | –40°C ≤ TA ≤ 125°C | 10 | 50 | ppm/°C | ||
Differential nonlinearity | ±0.1 | LSB | ||||
tCT | ADC conversion time | CT bit = 000 | 140 | 154 | μs | |
CT bit = 001 | 204 | 224 | ||||
CT bit = 010 | 332 | 365 | ||||
CT bit = 011 | 588 | 646 | ||||
CT bit = 100 | 1.1 | 1.21 | ms | |||
CT bit = 101 | 2.116 | 2.328 | ||||
CT bit = 110 | 4.156 | 4.572 | ||||
CT bit = 111 | 8.244 | 9.068 | ||||
SMBus | ||||||
SMBus timeout(4) | 28 | 35 | ms | |||
DIGITAL INPUT/OUTPUT | ||||||
Input capacitance | 3 | pF | ||||
Leakage input current | 0 V ≤ VSCL ≤ VVS , 0 V ≤ VSDA ≤ VVS, 0 V ≤ VAlert ≤ VVS , 0 V ≤ VA0 ≤ VVS , 0 V ≤ VA1 ≤ VVS |
0.1 | 1 | μA | ||
VIH | High-level input voltage | 0.7×VVS | 6 | V | ||
VIL | Low-level input voltage | –0.5 | 0.3×VVS | V | ||
VOL | Low-level output voltage, SDA, Alert | IOL = 3 mA | 0 | 0.4 | V | |
Hysteresis | 500 | mV | ||||
POWER SUPPLY | ||||||
Operating supply range | 2.7 | 5.5 | V | |||
IQ | Quiescent current | 330 | 420 | μA | ||
Quiescent current, power-down (shutdown) mode | 0.5 | 2 | μA | |||
VPOR | Power-on reset threshold | 2 | V |