SBOS805C July   2016  – September 2023 INA250-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Shunt Resistor
      2. 7.3.2 Short-Circuit Duration
      3. 7.3.3 Temperature Stability
    4. 7.4 Device Functional Modes
      1. 7.4.1 Amplifier Operation
      2. 7.4.2 Input Filtering
        1. 7.4.2.1 Calculating Gain Error Resulting from External Filter Resistance
      3. 7.4.3 Shutting Down the Device
      4. 7.4.4 Using the Device with Common-Mode Transients Above 36 V
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Current Summing
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Parallel Multiple INA250-Q1 Devices for Higher Current
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
      3. 8.2.3 Current Differencing
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

at TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
VCM Common-mode input range –0.1 36 V
CMR Common-mode rejection INA250A1-Q1, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 94 102 dB
INA250A2-Q1, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 97 110
INA250A3-Q1, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 106 114
INA250A4-Q1, VIN+ = 0 V to 36 V,
TA = –40°C to 125°C		 108 118
IOS Offset current, RTI(1) INA250A1-Q1, ISENSE = 0 A ±15 ±100 mA
INA250A2-Q1, ISENSE = 0 A ±12.5 ±50
INA250A3-Q1, ISENSE = 0 A ±5 ±30
INA250A4-Q1, ISENSE = 0 A ±5 ±20
dIOS/dT RTI versus temperature TA = –40°C to 125°C 25 250 μA/°C
PSR VS = 2.7 V to 36 V, TA = –40°C to 125°C ±0.03 ±1 mA/V
IB Input bias current IB+, IB-, ISENSE = 0 A ±28 ±40 μA
VREF Reference input range(3) 0 (VS) up to 18 V
SHUNT RESISTOR(5)
RSHUNT Shunt resistance
(SH+ to SH–)		 Equivalent resistance when used with onboard amplifier 1.998 2 2.002 mΩ
Used as stand-alone resistor(7) 1.8 2 2.2
Package resistance IN+ to IN– 4.5 mΩ
Resistor temperature coefficient TA = –40°C to 125°C 15 ppm/°C
TA = –40°C to 0°C 50
TA = 0°C to 125°C 10
ISENSE Maximum continuous current(4) TA = –40°C to 85°C ±15 A
Shunt short time overload ISENSE = 30 A for 5 seconds ±0.05%
Shunt thermal shock –65°C to 150°C, 500 cycles ±0.1%
Shunt resistance to solder heat 260°C solder, 10 s ±0.1%
Shunt high temperature exposure 1000 hours, TA = 150°C ±0.15%
Shunt cold temperature storage 24 hours, TA = –65°C ±0.025%
OUTPUT
G Gain INA250A1-Q1 200 mV/A
INA250A2-Q1 500
INA250A3-Q1 800
INA250A4-Q1 2 V/A
System gain error(6) ISENSE = –10 A to 10 A, TA = 25°C ±0.05% ±0.3%
ISENSE = –10 A to 10 A,
TA = –40°C to 125°C		 ±0.75%
TA = –40°C to 125°C 45 ppm/°C
Nonlinearity error ISENSE = 0.5 A to 10 A ±0.03%
RO Output impedance 1.5 Ω
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT(2)
Swing to VS power-supply rail RL = 10 kΩ to GND (VS) – 0.1 (VS) – 0.2 V
Swing to GND RL = 10 kΩ to GND (VGND) + 25 (VGND) + 50 mV
FREQUENCY RESPONSE
BW Bandwidth INA250A1-Q1, CL = 10 pF 50 kHz
INA250A2-Q1, CL = 10 pF 50
INA250A3-Q1, CL = 10 pF 35
INA250A4-Q1, CL = 10 pF 11
SR Slew rate CL = 10 pF 0.2 V/μs
NOISE, RTI(1)
Voltage noise density INA250A1-Q1 51 nV/√ Hz
INA250A2-Q1 35
INA250A3-Q1 37
INA250A4-Q1 27
POWER SUPPLY
VS Operating voltage range 2.7 36 V
IQ Quiescent current TA = –40°C to 125°C 200 300 μA
TEMPERATURE RANGE
Specified range –40 125 °C
(1) RTI = referred-to-input.
(2) See Output Voltage Swing vs Output Current (Figure 6-19).
(3) The supply voltage range maximum is 36 V, but the reference voltage cannot be higher than 18 V.
(4) See Figure 7-1 and the Layout section for additional information on the current derating and layout recommendations to improve the current handling capability of the device at higher temperatures.
(5) See the Integrated Shunt Resistor section for additional information regarding the integrated current-sensing resistor.
(6) System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical Characteristics table.
(7) The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See the Integrated Shunt Resistor section for more information.