SBOS511C April   2015  – September 2023

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Shunt Resistor
      2. 7.3.2 Short-Circuit Duration
      3. 7.3.3 Temperature Stability
    4. 7.4 Device Functional Modes
      1. 7.4.1 Amplifier Operation
      2. 7.4.2 Input Filtering
        1. 7.4.2.1 Calculating Gain Error Resulting from External Filter Resistance
      3. 7.4.3 Shutting Down the Device
      4. 7.4.4 Using the Device with Common-Mode Transients Above 36 V
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Current Summing
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Parallel Multiple INA250 Devices for Higher Current
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
      3. 8.2.3 Current Differencing
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Revision History

Changes from Revision B (December 2015) to Revision C (September 2023)

  • Changed the numbering format for tables, figures, and cross-references throughout the documentGo
  • Changed the Device Information table to Package Information Go
  • Changed the Shunt resistance (SH+ to SH–) minimum value for use as stand-alone resistor from: 1.9 mΩ to 1.8 mΩ in the Electrical Characteristics tableGo
  • Changed the Shunt resistance (SH+ to SH–) minimum value for use as stand-alone resistor from: 2.1 mΩ to 2.2 mΩ in the Electrical Characteristics tableGo

Changes from Revision A (May 2015) to Revision B (December 2015)

  • Released INA250A1, INA250A3, and INA250A4 to productionGo
  • Added TI Design Go
  • Added parameters for INA250A1, INA250A3, and INA250A4 to Electrical Characteristics tableGo
  • Added ± to specifications for the Shunt short time overload, Shunt thermal shock, Shunt resistance to solder heat, Shunt high temperature exposure, and Shunt cold temperature storage parameters of Electrical Characteristics tableGo
  • Added curves for INA250A1, INA250A3, and INA250A4 to Typical Characteristics section Go
  • Added Amplifier Operation section Go

Changes from Revision * (April 2015) to Revision A (May 2015)

  • INA250A2 released to productionGo