SBOS445C July 2008 – December 2015 INA333
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage | 7 | V | ||
Analog input voltage(2) | (V–) – 0.3 | (V+) + 0.3 | V | |
Output short-circuit(3) | Continuous | |||
Operating temperature, TA | –40 | 150 | °C | |
Junction temperature, TJ | 150 | °C | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | |||
Machine model (MM) | ±200 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VS | Supply voltage | 1.8 | 5.5 | V |
Specified temperature | –40 | 125 | °C |
THERMAL METRIC(1) | INA333 | UNIT | ||
---|---|---|---|---|
DGK (VSSOP) | DRG (WSON) | |||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 169.5 | 60 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 62.7 | 60 | °C/W |
RθJB | Junction-to-board thermal resistance | 90.3 | 50 | °C/W |
ψJT | Junction-to-top characterization parameter | 7.6 | — | °C/W |
ψJB | Junction-to-board characterization parameter | 88.7 | — | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | 6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
INPUT(1) | |||||||
VOSI | Offset voltage, RTI(2) | ±10 ±25/G | ±25 ±75/G | μV | |||
PSR | vs temperature | TA = –40°C to +125°C | ±0.1 ±0.5 / G | μV/°C | |||
vs power supply | 1.8 V ≤ VS ≤ 5.5 V | ±1 ±5/G | ±5 ±15/G | μV/V | |||
Long-term stability | See (3) | ||||||
Turnon time to specified VOSI | TA = –40°C to +125°C | See Typical Characteristics | |||||
Impedance | |||||||
ZIN | Differential | 100 || 3 | GΩ || pF | ||||
ZIN | Common-mode | 100 || 3 | GΩ || pF | ||||
VCM | Common-mode voltage range | VO = 0 V | (V–) + 0.1 | (V+) – 0.1 | V | ||
CMR | Common-mode rejection | DC to 60 Hz | |||||
G = 1 | VCM = (V–) + 0.1 V to (V+) – 0.1 V |
80 | 90 | dB | |||
G = 10 | VCM = (V–) + 0.1 V to (V+) – 0.1 V |
100 | 110 | dB | |||
G = 100 | VCM = (V–) + 0.1 V to (V+) – 0.1 V |
100 | 115 | dB | |||
G = 1000 | VCM = (V–) + 0.1 V to (V+) – 0.1 V |
100 | 115 | dB | |||
INPUT BIAS CURRENT | |||||||
IB | Input bias current | ±70 | ±200 | pA | |||
vs temperature | TA = –40°C to +125°C | See Figure 26 | pA/°C | ||||
IOS | Input offset current | ±50 | ±200 | pA | |||
vs temperature | TA = –40°C to +125°C | See Figure 28 | pA/°C | ||||
INPUT VOLTAGE NOISE | |||||||
eNI | Input voltage noise | G = 100, RS = 0 Ω, f = 10 Hz | 50 | nV/√Hz | |||
G = 100, RS = 0 Ω, f = 100 Hz | 50 | nV/√Hz | |||||
G = 100, RS = 0 Ω, f = 1 kHz | 50 | nV/√Hz | |||||
G = 100, RS = 0 Ω, f = 0.1 Hz to 10 Hz | 1 | μVPP | |||||
iN | Input current noise | f = 10 Hz | 100 | fA/√Hz | |||
f = 0.1 Hz to 10 Hz | 2 | pAPP | |||||
GAIN | |||||||
G | Gain equation | 1 + (100 kΩ/RG) | V/V | ||||
Range of gain | 1 | 1000 | V/V | ||||
Gain error | VS = 5.5 V, (V–) + 100 mV ≤ VO ≤ (V+) – 100 mV |
||||||
G = 1 | ±0.01% | ±0.1% | |||||
G = 10 | ±0.05% | ±0.25% | |||||
G = 100 | ±0.07% | ±0.25% | |||||
G = 1000 | ±0.25% | ±0.5% | |||||
Gain vs temperature, G = 1 | TA = –40°C to +125°C | ±1 | ±5 | ppm/°C | |||
Gain vs temperature, G > 1(4) | TA = –40°C to +125°C | ±15 | ±50 | ppm/°C | |||
Gain nonlinearity | VS = 5.5 V, (V–) + 100 mV ≤ VO ≤ (V+) – 100 mV |
||||||
Gain nonlinearity, G = 1 to 1000 | RL = 10 kΩ | 10 | ppm | ||||
OUTPUT | |||||||
Output voltage swing from rail | VS = 5.5 V, RL = 10 kΩ | See Figure 29 | 50 | mV | |||
Capacitive load drive | 500 | pF | |||||
ISC | Short-circuit current | Continuous to common | –40, +5 | mA | |||
FREQUENCY RESPONSE | |||||||
Bandwidth, –3dB | G = 1 | 150 | kHz | ||||
G = 10 | 35 | kHz | |||||
G = 100 | 3.5 | kHz | |||||
G = 1000 | 350 | Hz | |||||
SR | Slew rate | VS = 5 V, VO = 4-V step, G = 1 | 0.16 | V/μs | |||
VS = 5 V, VO = 4-V step, G = 100 | 0.05 | V/μs | |||||
tS | Settling time to 0.01% | VSTEP = 4 V, G = 1 | 50 | μs | |||
VSTEP = 4 V, G = 100 | 400 | μs | |||||
tS | Settling time to 0.001% | VSTEP = 4 V, G = 1 | 60 | μs | |||
VSTEP = 4 V, G = 100 | 500 | μs | |||||
Overload recovery | 50% overdrive | 75 | μs | ||||
REFERENCE INPUT | |||||||
RIN | 300 | kΩ | |||||
Voltage range | V– | V+ | V | ||||
POWER SUPPLY | |||||||
Voltage range | Single voltage range | +1.8 | +5.5 | V | |||
Dual voltage range | ±0.9 | ±2.75 | V | ||||
IQ | Quiescent current | VIN = VS / 2 | 50 | 75 | μA | ||
vs temperature | TA = –40°C to +125°C | 80 | μA | ||||
TEMPERATURE RANGE | |||||||
Specified temperature range | –40 | 125 | °C | ||||
Operating temperature range | –40 | 150 | °C |