SBOSAI9B December   2023  – March 2024 INA500

PRODMIX  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics - INA500A
    6. 6.6 Electrical Characteristics - INA500B
    7. 6.7 Electrical Characteristics - INA500C
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Gain Options and Resistors
        1. 7.3.1.1 Gain Error and Drift
      2. 7.3.2 Input Common-Mode Voltage Range
      3. 7.3.3 EMI Rejection
      4. 7.3.4 Typical Specifications and Distributions
      5. 7.3.5 Electrical Overstress
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Reference Pin
    2. 8.2 Typical Applications
      1. 8.2.1 Battery Monitoring using Difference Amplifier
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 PSpice® for TI
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|6
  • DCK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics - INA500A

For VS = (V+) – (V–) = 1.7V to 5.5V (±0.85V to ±2.75V) at TA = 25°C, VREF = VS / 2,  G = 1, RL = 100kΩ connected to VS / 2, VCM = (VIN+ + VIN–) / 2 = VS / 2, VIN = (VIN+ – VIN–) = 0V and VOUT = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET
VOSO Offset voltage, RTO(3) VS = 5.5V TA = 25°C ±0.70 ±3.5 mV
Offset voltage over T, RTO(3) VS = 5.5V TA = –40°C to 125°C ±3.6 mV
Offset temp drift, RTO(3)(1) VS = 5.5V TA = –40°C to 125°C ±1.8 8.5 µV/°C
PSRR Power-supply rejection ratio VS = 1.7V to 5.5V TA = 25°C   40 175 µV/V
INPUT IMPEDANCE
RIN-DM Differential Resistance 2160 kΩ 
RIN-CM Common-mode Resistance 1080 kΩ 
INPUT VOLTAGE
VCM Input common-mode Range VREF = VS / 2 2*(V–) – VREF 2*(V+) – VREF V
CMRR DC Common-mode rejection ratio, RTO(3) VCM = [2*(V–) – VREF] to [2*(V+) – VREF – 1.4V], High CMRR region VS = 5.5V, VREF = VS / 2 75 87 dB
CMRR DC Common-mode rejection ratio, RTO(3) VCM = [2*(V–) – VREF] to [2*(V+) – VREF], Rail-to-Rail CMRR region VS = 5.5V, VREF = VS / 2 62 77 dB
NOISE VOLTAGE
eNI Output voltage noise density f = 1kHz 310 nV/√Hz
f = 10kHz 308
ENI Output voltage noise fB = 0.1Hz to 10Hz 8 µVPP
GAIN
GE Gain error(2) VREF = VS / 2 VO = (V–) + 0.1V to (V+) – 0.1V ±0.01 ±0.05 %
Gain drift vs temperature(2) TA = –40°C to 125°C ±1 ppm/°C
OUTPUT
VOH Positive rail headroom RL = 10kΩ to VS / 2 10.5 15 mV
VOL Negative rail headroom RL = 10kΩ to VS / 2 8.5 15 mV
CL Drive Load capacitance drive VO = 100mV step, Overshoot < 20% 200 pF
ZO Closed-loop output impedance f = 10kHz 200 Ω
ISC Short-circuit current VS = 5.5V ±33 mA
FREQUENCY RESPONSE
BW Bandwidth, –3dB VIN = 10mVpk-pk 125 kHz
THD + N Total harmonic distortion + noise VS = 5.5V, VCM = 2.75V, VO = 1VRMS, RL = 100kΩ
ƒ = 1kHz, 80kHz measurement BW		 0.02 %
EMIRR Electro-magnetic interference rejection ratio f = 1GHz, VIN_EMIRR = 100mV 100 dB
SR Slew rate VS = 5V, VO = 2V step 0.20 V/µs
tS Settling time To 0.1%, VS = 5.5V, VSTEP = 2V, CL = 10pF 18 µs
To 0.01%, VS = 5.5V, VSTEP = 2V, CL = 10pF 33
Settling time To 0.1%, VS = 5.5V, VOUT_STEP = 4V, CL = 10pF 26
To 0.01%, VS = 5.5V, VOUT_STEP = 4V, CL = 10pF 43
Overload recovery VSTEP = VS / G 23.2 µs
REFERENCE INPUT
REF - VIN Input voltage range VS = 5.5V (V–)  (V+)  V
REF - G Reference gain to output 1 V/V
REF - GE Reference gain error(2)  VS = 5.5V ±0.005 ±0.02 %
POWER SUPPLY
VS Power-supply voltage Dual-supply ±0.85 ±2.75 V
IQ Quiescent current VS = 1.7V 14.5 µA
VS = 5.5V 13.5 18.5 µA
VS = 5.5V TA = –40°C to 125°C 19.5
(1) Offset drifts are uncorrelated. 
(2) Minimum and maximum values are specified by characterization.
(3) RTO stands for Referred to Output