SBOS914F October   2018  – April 2021 INA592

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: G = 1/2
    6. 7.6 Electrical Characteristics: G = 2
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Basic Power Supply and Signal Connections
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Operating Voltage
          2. 9.2.1.2.2 Offset Voltage Trim
          3. 9.2.1.2.3 Input Voltage Range
          4. 9.2.1.2.4 Capacitive Load Drive Capability
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Additional Applications
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.1.3 Application Curve

The interaction between the output stage of an operational amplifier (op amp) and capacitive loads can impact the stability of the circuit. Throughout the industry, op-amp output-stage requirements have changed greatly since their original creation. Classic output stages with the class-AB, common-emitter, bipolar-junction transistor (BJT) have now been replaced with common-collector BJT and common-drain, complementary metal-oxide semiconductor (CMOS) devices. Both of these technologies enable rail-to-rail output voltages for single-supply and battery-powered applications. A result of changing these output-stage structures is that the op-amp open-loop output impedance (ZO) changed from the largely resistive behavior of early BJT op amps to a frequency-dependent ZO that features capacitive, resistive, and inductive portions. Proper understanding of ZO over frequency, and also the resulting closed-loop output impedance over frequency, is crucial for the understanding of loop-gain, bandwidth, and stability analysis. Figure 9-4 shows how the INA592 closed-loop output impedance varies over frequency.

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VS = ±18 V
Figure 9-4 Closed-Loop Output Impedance vs Frequency