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  • INA827 Wide Supply Range, Rail-to-Rail Output Instrumentation Amplifier With a Minimum Gain of 5

    • SBOS631B June   2012  – November 2017 INA827

      PRODUCTION DATA.  

  • CONTENTS
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  • INA827 Wide Supply Range, Rail-to-Rail Output Instrumentation Amplifier With a Minimum Gain of 5
  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
  7. 7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Setting the Gain
        1. 8.3.1.1 Gain Drift
      2. 8.3.2  Offset Trimming
      3. 8.3.3  Input Common-Mode Range
      4. 8.3.4  Inside the INA827
      5. 8.3.5  Input Protection
      6. 8.3.6  Input Bias Current Return Path
      7. 8.3.7  Reference Pin
      8. 8.3.8  Dynamic Performance
      9. 8.3.9  Operating Voltage
        1. 8.3.9.1 Low-Voltage Operation
      10. 8.3.10 Error Sources
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 CMRR vs Frequency
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
  14. IMPORTANT NOTICE

Package Options

Mechanical Data (Package|Pins)
  • DGK|8
    • MPDS028E
Thermal pad, mechanical data (Package|Pins)
Orderable Information
  • sbos631b_oa
  • sbos631b_pm
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DATA SHEET

INA827 Wide Supply Range, Rail-to-Rail Output Instrumentation Amplifier With a Minimum Gain of 5

1 Features

  • Eliminates Errors from External Resistors at Gain of 5
  • Common-Mode Range Goes Below
    Negative Supply
  • Input Protection: Up to ±40 V
  • Rail-to-Rail Output
  • Outstanding Precision:
    • Common-Mode Rejection: 88 dB, minimum
    • Low Offset Voltage: 150 µV, maximum
    • Low Drift: 2.5 µV/°C, maximum
    • Low Gain Drift: 1 ppm/°C, max (G = 5 V/V)
    • Power-Supply Rejection:
      100 dB, min (G = 5)
    • Noise: 17 nV/√Hz, G = 1000 V/V
  • High Bandwidth:
    • G = 5: 600 kHz
    • G = 100: 150 kHz
  • Supply Current: 200 µA, typical
  • Supply Range:
    • Single Supply: 3 V to 36 V
    • Dual Supply: ±1.5 V to ±18 V
  • Specified Temperature Range:
    –40°C to +125°C
  • Package: 8-pin VSSOP

2 Applications

  • Industrial Process Controls
  • Multichannel Systems
  • Power Automation
  • Weigh Scales
  • Medical Instrumentation
  • Data Acquisition

3 Description

The INA827 is a low-cost instrumentation amplifier (INA) that offers extremely low power consumption and operates over a very wide single- or dual-supply range. The device is optimized for the lowest possible gain drift of only 1 ppm per degree Celsius in G = 5, which requires no external resistor. However, a single external resistor sets any gain from 5 to 1000.

The INA827 is optimized to provide excellent common-mode rejection ratio (CMRR) of over 88 dB (G = 5) over frequencies up to 5 kHz. In G = 5, CMRR exceeds 88 dB across the full input common-mode range from the negative supply all the way up to 1 V of the positive supply. Using a rail-to-rail output, the INA827 is well-suited for low-voltage operation from a 3-V singlesupply as well as dual supplies up to ±18 V. Additional circuitry protects the inputs against overvoltage of up to ±40 V beyond the power supplies by limiting the input currents to a save level.

The INA827 is available in a small VSSOP-8 package and is specified for the –40°C to +125°C temperature range. For a similar instrumentation amplifier with a gain range of 1 V/V to 1000 V/V, see the INA826.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
INA827 VSSOP (8) 3.00 mm × 3.00 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Schematic

INA827 alt_sbos631.gif

4 Revision History

Changes from A Revision (July 2013) to B Revision

  • Added Device Information table, ESD Ratings table, Recommended Operating Conditions table, Overview section, Functional Block Diagram section, Feature Description section, Device Functional Modes section, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
  • Deleted device graphic from top of page 1Go
  • Changed Features section: changed sub-bullets of Supply Range bullet Go
  • Changed MSOP to VSSOP throughout document Go
  • Changed single supply value in first paragraph of Description section Go
  • Added Simplified Schematic titleGo
  • Deleted Package and Ordering Information tableGo
  • Changed Pin Configuration and Functionssection: changed section title, changed Pin Functions title, added I/O columnGo
  • Changed test conditions of Input, PSRR and VCM parameters in Electrical Characteristics table Go
  • Changed minimum specifications of Power Supply, VS parameter in Electrical Characteristics table Go
  • Changed Typical Characteristics section: moved conditions from title to conditions line under curveGo
  • Changed conditions of Figure 7 and Figure 8Go
  • Changed conditions of Figure 37 and Figure 38Go
  • Changed power-supply range in Operating Voltage section Go
  • Changed power supply low level in Low-Voltage Operation section Go
  • Added Design Requirements, Detailed Design Procedure, and Application Curves to the Typical Application sectionGo

Changes from * Revision (June 2012) to A Revision

  • Changed front-page graphicGo
  • Updated Figure 15Go
  • Updated Figure 16Go
  • Updated Figure 61Go

5 Pin Configuration and Functions

DGK Package
8-Pin VSSOP
Top View
INA827 po_bos562.gif

Pin Functions

NAME NO. I/O DESCRIPTION
–IN 1 I Negative input
+IN 4 I Positive input
REF 6 I Reference input. This pin must be driven by low impedance.
RG 2, 3 — Gain setting pin. Place a gain resistor between pin 2 and pin 3.
VOUT 7 O Output
–VS 5 — Negative supply
+VS 8 — Positive supply

6 Specifications

6.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
Voltage Supply –20 20 V
Input –40 40
REF input –20 20 V
Output short-circuit(2) Continuous
Temperature range Operating, TA –55 150 °C
Junction, TJ 175
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Short-circuit to VS / 2.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage Single supply 3 36 V
Dual supply ±1.5 ±18
Specified temperature –40 125 °C
Operating temperature –50 150 °C

6.4 Thermal Information

THERMAL METRIC(1) INA827 UNIT
DGK (VSSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance 215.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 66.3 °C/W
RθJB Junction-to-board thermal resistance 97.8 °C/W
ψJT Junction-to-top characterization parameter 10.5 °C/W
ψJB Junction-to-board characterization parameter 96.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

at TA = +25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, and G = 5 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VOSI Offset voltage(1) Input stage RTI, VOS = VOSI + (VOSO / G) 40 150 µV
TA = –40°C to +125°C 0.5 2.5 µV/°C
VOSO Output stage RTI, VOS = VOSI + (VOSO / G) 500 2000 µV
TA = –40°C to +125°C 5 30 µV/°C
PSRR Power-supply rejection ratio G = 5, VS = ±1.5 V to ±18 V 100 120 dB
G = 10, VS = ±1.5 V to ±18 V 106 126
G > 100, VS = ±1.5 V to ±18 V 120 140
ZIN Impedance Differential 2 || 1 GΩ || pF
Common-mode 10 || 5
RFI filter, –3-dB frequency 25 MHz
VCM Operating input range(2) VS = ±1.5 V to ±18 V, VO = 0 V (V–) – 0.2 (V+) – 0.9 V
VS = ±1.5 V to ±18 V, VO = 0 V, TA = +125°C (V–) – 0.05 (V+) – 0.8
VS = ±1.5 V to ±18 V, VO = 0 V, TA = –40°C (V–) – 0.3 (V+) – 0.95
Input overvoltage range TA = –40°C to +125°C (V+) – 40 (V–) + 40 V
CMRR Common-mode rejection ratio DC to 60 Hz G = 5, VCM = V– to (V+) – 1 V 88 100 dB
G = 10, VCM = V– to (V+) – 1 V 94 106
G > 100, VCM = V– to (V+) – 1 V 110 126
At 5 kHz G = 5, VCM = V– to (V+) – 1 V 88
G = 10, VCM = V– to (V+) – 1 V 94
G > 100, VCM = V– to (V+) – 1 V 104
BIAS CURRENT
IB Input bias current 35 50 nA
TA = –40°C to +125°C 95
IOS Input offset current –5 0.7 5 nA
TA = –40°C to +125°C 10
NOISE VOLTAGE(4)
eNI Voltage noise Input f = 1 kHz, G = 1000, RS = 0 Ω 17 18 nV/√Hz
eNO Output f = 1 kHz, G = 5, RS = 0 Ω 250 285
RTI Referred-to-input G = 5, fB = 0.1 Hz to 10 Hz, RS = 0 Ω 1.4 µVPP
G = 1000, fB = 0.1 Hz to 10 Hz, RS = 0 Ω 0.5
iN Noise current f = 1 kHz 120 fA/√Hz
fB = 0.1 Hz to 10 Hz 5 pAPP
GAIN
G Gain equation INA827 q_ec_g_equation_bos631.gif V/V
G Range of gain 5 1000 V/V
GE Gain error G = 5, VO = ±10 V ±0.005% ±0.035%
G = 10 to 1000, VO = ±10 V ±0.1% ±0.4%
Gain versus temperature(3) G = 5, TA = –40°C to +125°C ±0.1 ±1 ppm/°C
G > 5, TA = –40°C to +125°C 8 25
Gain nonlinearity G = 5 to 100, VO = –10 V to +10 V, RL = 10 kΩ 2 5 ppm
G = 1000, VO = –10 V to +10 V, RL = 10 kΩ 20 50
OUTPUT
Voltage swing RL = 10 kΩ (V–) + 0.1 (V+) – 0.15 V
Load capacitance stability 1000 pF
Short-circuit current Continuous to common ±16 mA
FREQUENCY RESPONSE
BW Bandwidth, –3 dB G = 5 600 kHz
G = 10 530
G = 100 150
G = 1000 15
SR Slew rate G = 5, VO = ±14.5 V 1.5 V/µs
G = 100, VO = ±14.5 V 1.5
tS Settling time To 0.01% G = 5, VSTEP = 10 V 10 µs
G = 100, VSTEP = 10 V 12
G = 1000, VSTEP = 10 V 95
To 0.001% G = 1, VSTEP = 10 V 11
G = 100, VSTEP = 10 V 18
G = 1000, VSTEP = 10 V 118
REFERENCE INPUT
RIN Input impedance 60 kΩ
Voltage range V– V+ V
Gain to output 1 V/V
Reference gain error 0.01 %
POWER SUPPLY
VS Power-supply voltage Single 3.0 36 V
Dual ±1.5 ±18
IQ Quiescent current VIN = 0 V 200 250 µA
TA = –40°C to +125°C 250 320
TEMPERATURE RANGE
Specified –40 125 °C
Operating –50 150 °C
θJA Thermal resistance 215 °C/W
(1) Total offset, referred-to-input (RTI): VOS = VOSI + (VOSO / G).
(2) Input voltage range of the INA827 input stage. The input range depends on the common-mode voltage, differential voltage, gain, and reference voltage. See the Typical Characteristics section for more information.
(3) The values specified for G > 5 do not include the effects of the external gain-setting resistor, RG.
(4)
Total RTI voltage noise = INA827 q_total_rti_noise_bos562.gif.

7 Typical Characteristics

at TA = +25°C, VS = ±15 V, RL = 10 kΩ, VREF = 0 V, and G = 5 (unless otherwise noted)
INA827 tc_1_vosi_distri_bos631.png
Figure 1. Typical Distribution of Input Offset Voltage
INA827 tc_2_voso_distri_bos631.png
Figure 3. Typical Distribution of Output Offset Voltage
INA827 tc_5_ib_distri_bos631.png
Figure 5. Typical Distribution of Input Bias Current
INA827 tc_7_common_mode_vs_output_1_bos631 rev1.png
Single supply, VS = +3 V, G = 5
Figure 7. Input Common-Mode Voltage vs Output Voltage
INA827 tc_9_common_mode_vs_output_3_bos631.png
Single supply, VS = +5 V, G = 5
Figure 9. Input Common-Mode Voltage vs Output Voltage
INA827 tc_11_common_mode_vs_output_5_bos631.png
Dual supply, VS = ±5 V
Figure 11. Input Common-Mode Voltage vs Output Voltage
INA827 tc_13_common_mode_vs_output_7_bos631.png
Dual supply, VS = ±15 V, ±12 V, G = 100
Figure 13. Input Common-Mode Voltage vs Output Voltage
INA827 C015_SBOS631.png
Figure 15. CMRR vs Frequency (RTI)
INA827 tc_18_psrr_pos_bos631.png
Figure 17. Positive PSRR vs Frequency (RTI)
INA827 tc_22_gain_vs_frequency_bos631.png
Figure 19. Gain vs Frequency
INA827 tc_24_current_noise_density_bos631.png
Figure 21. Current Noise Spectral Density vs Frequency (RTI)
INA827 tc_26_low_freq_voltage_noise_2_bos631.gif
Figure 23. 0.1-Hz to 10-Hz RTI Voltage Noise (G = 1000)
INA827 tc_28_bias_current_vs_common_mode_1_bos631.png
VS = +2.7 V
Figure 25. Input Bias Current vs Common-Mode Voltage
INA827 tc_30_bias_current_vs_temperature_bos631.png
Figure 27. Input Bias Current vs Temperature
INA827 tc_32_gain_vs_temperature_bos631.png
Figure 29. Gain Error vs Temperature (G = 5)
INA827 tc_35_gain_nonlinearity_1_bos631.png
Figure 31. Gain Nonlinearity (G = 5)
INA827 tc_37_gain_nonlinearity_3_bos631.png
Figure 33. Gain Nonlinearity (G = 100)
INA827 tc_57_v_os_vs_v_cm_1_bos631.png
VS = ±15 V
Figure 35. Offset Voltage vs
Negative Common-Mode Voltage
INA827 tc_59_v_os_vs_v_cm_3_bos631 rev 1.png
VS = +3 V
Figure 37. Offset Voltage vs
Negative Common-Mode Voltage
INA827 tc_39_pos_output_swing_bos631.png
VS = ±15 V
Figure 39. Positive Output Voltage Swing vs
Output Current
INA827 tc_43_large_signal_bos631.png
Figure 41. Large-Signal Frequency Response
INA827 tc_45_capacitive_load_bos631.gif
Figure 43. Small-Signal Response Over Capacitive Loads
(G = 5)
INA827 tc_52_small_signal_response_2_bos631.gif
G = 10, RL = 10 kΩ, CL = 100 pF
Figure 45. Small-Signal Response
INA827 tc_54_small_signal_response_4_bos631.gif
G = 1000, RL = 10 kΩ, CL = 100 pF
Figure 47. Small-Signal Response
INA827 tc_62_large_signal_3_bos631.gif
G = 10, RL = 10 kΩ, CL = 100 pF
Figure 49. Large-Signal Response and Settling Time
INA827 tc_64_large_signal_5_bos631.gif
G = 1000, RL = 10 kΩ, CL = 100 pF
Figure 51. Large-Signal Response and Settling Time
INA827 tc_56_warm_up_bos631.png
Figure 53. Change In Input Offset Voltage vs Warm-Up Time
INA827 tc_2_vosi_drift_distri_bos631.png
Figure 2. Typical Distribution of Input Offset Voltage Drift
INA827 tc_4_voso_drift_distri_bos631.png
Figure 4. Typical Distribution of Output Offset Voltage Drift
INA827 tc_6_ios_distri_bos631.png
Figure 6. Typical Distribution of Input Offset Current
INA827 tc_8_common_mode_vs_output_2_bos631 rev1.png
Single supply, VS = +3 V, G = 100
Figure 8. Input Common-Mode Voltage vs Output Voltage
INA827 tc_10_common_mode_vs_output_4_bos631.png
Single supply, VS = +5 V, G = 100
Figure 10. Input Common-Mode Voltage vs Output Voltage
INA827 tc_12_common_mode_vs_output_6_bos631.png
Dual supply, VS = ±15 V, ±12 V, G = 5
Figure 12. Input Common-Mode Voltage vs Output Voltage
INA827 tc_14_overvoltage_vs_current_1_bos631.png
G = 1, VS = ±15 V
Figure 14. Input Overvoltage vs Input Current
INA827 C016_SBOS631.png
1-kΩ source imbalance
Figure 16. CMRR vs Frequency (RTI)
INA827 tc_19_psrr_neg_bos631.png
Figure 18. Negative PSRR vs Frequency (RTI)
INA827 tc_23_voltage_noise_density_bos631.png
Figure 20. Voltage Noise Spectral Density vs Frequency (RTI)
INA827 tc_25_low_freq_voltage_noise_1_bos631.gif
Figure 22. 0.1-Hz to 10-Hz RTI Voltage Noise (G = 5)
INA827 tc_27_low_freq_current_noise_bos631.gif
Figure 24. 0.1-Hz to 10-Hz RTI Current Noise
INA827 tc_29_bias_current_vs_common_mode_2_bos631.png
VS = ±15 V
Figure 26. Input Bias Current vs Common-Mode Voltage
INA827 tc_31_offset_current_vs_temperature_bos631.png
Figure 28. Input Offset Current vs Temperature
INA827 tc_34_supply_current_vs_temperature_bos631.png
Figure 30. Supply Current vs Temperature
INA827 tc_36_gain_nonlinearity_2_bos631.png
Figure 32. Gain Nonlinearity (G = 10)
INA827 tc_38_gain_nonlinearity_4_bos631.png
Figure 34. Gain Nonlinearity (G = 1000)
INA827 tc_58_v_os_vs_v_cm_2_bos631.png
VS = ±15 V
Figure 36. Offset Voltage vs
Positive Common-Mode Voltage
INA827 tc_60_v_os_vs_v_cm_4_bos631 rev1.png
VS = +3 V
Figure 38. Offset Voltage vs
Positive Common-Mode Voltage
INA827 tc_40_neg_output_swing_bos631.png
VS = ±15 V
Figure 40. Negative Output Voltage Swing vs
Output Current
INA827 tc_44_settling_time_bos631.png
VS = ±15 V
Figure 42. Settling Time vs Step Size
INA827 tc_46_small_signal_response_1_bos631.gif
G = 5, RL = 1 kΩ, CL = 100 pF
Figure 44. Small-Signal Response
INA827 tc_53_small_signal_response_3_bos631.gif
G = 100, RL = 10 kΩ, CL = 100 pF
Figure 46. Small-Signal Response
INA827 tc_61_large_signal_2_bos631.gif
G = 5, RL = 10 kΩ, CL = 100 pF
Figure 48. Large-Signal Response and Settling Time
INA827 tc_63_large_signal_4_bos631.gif
G = 100, RL = 10 kΩ, CL = 100 pF
Figure 50. Large-Signal Response and Settling Time
INA827 tc_55_open_loop_impedance_bos631.png
Figure 52. Open-Loop Output Impedance

 
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