SBOS945B
November 2020 – April 2021
INA849
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Device Comparison Table
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
Typical Characteristics
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Adjustable Gain Setting
8.3.2
Gain Drift
8.3.3
Wide Input Common-Mode Range
8.4
Device Functional Modes
9
Application and Implementation
9.1
Application Information
9.1.1
Reference Pin
9.1.2
Input Bias Current Return Path
9.1.3
Thermal Effects due to Power Dissipation
9.2
Typical Application
9.2.1
Sensor Conditioning Circuit
9.2.1.1
Design Requirements
9.2.1.2
Detailed Design Procedure
9.2.2
Phantom Power in Microphone Preamplifier Circuit
10
Power Supply Recommendations
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
12
Device and Documentation Support
12.1
Documentation Support
12.1.1
Related Documentation
12.2
Receiving Notification of Documentation Updates
12.3
Support Resources
12.4
Trademarks
12.5
Electrostatic Discharge Caution
12.6
Glossary
13
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
D|8
MSOI002K
DGK|8
MPDS028E
Thermal pad, mechanical data (Package|Pins)
Orderable Information
sbos945b_oa
sbos945b_pm
7.2
ESD Ratings
VALUE
UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±750
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.