SBOS938C October   2018  – June 2020 INA901-SP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Quality Conformance Inspection
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Basic Connection
      2. 7.3.2 Selecting RS
      3. 7.3.3 Transient Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 First- or Second-Order Filtering
      2. 7.4.2 Accuracy Variations as a Result of VSENSE and Common-Mode Voltage
        1. 7.4.2.1 Normal Case 1: VSENSE ≥ 20 mV, VCM ≥ VS
        2. 7.4.2.2 Normal Case 2: VSENSE ≥ 20 mV, VCM < VS
        3. 7.4.2.3 Low VSENSE Case 1: VSENSE < 20 mV, –15 V ≤ VCM < 0; and Low VSENSE Case 3: VSENSE < 20 mV, VS < VCM ≤ 65 V
        4. 7.4.2.4 Low VSENSE Case 2: VSENSE < 20 mV, 0 V ≤ VCM ≤ VS
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 RFI and EMI
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Revision History

Changes from B Revision (December 2018) to C Revision

  • Changed Radiation Hardness Assured (RHA) at the low dose rate from: 100 krad(Si) to: 50 krad(Si)Go
  • Changed Single Event Latch-up (SEL) immunity at 125 °C from: 93 MeV-cm2/mg to: 75 MeV-cm2/mgGo
  • Changed common-mode input voltage maximum from: 80 V to: 65 VGo
  • Changed recommended VCM minimum from: –16 V to: –15 V throughout data sheetGo
  • Removed CLOAD = 1000 pF text condition from the Gain vs Frequency graphGo

Changes from A Revision (December 2018) to B Revision

  • Changed the device status from Advance Information to Production DataGo