SLLS897F march   2008  – august 2023 ISO1176

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics: Driver
    10. 6.10 Electrical Characteristics: Receiver
    11. 6.11 Supply Current
    12. 6.12 Electrical Characteristics: ISODE-Pin
    13. 6.13 Switching Characteristics: Driver
    14. 6.14 Switching Characteristics: Receiver
    15. 6.15 Insulation Characteristics Curves
    16. 6.16 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Transient Voltages
        2. 9.2.2.2 ISO1176 “Sticky Bit” Issue (Under Certain Conditions)
      3. 9.2.3 Application Curve
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2.1 Transient Voltages

From this model, the voltage at the isolated bus return is

Equation 1. GUID-C9082939-81CC-4AAA-8835-78F0785444F8-low.gif

and is always less than 16 V from VN. If the ISO1176 is tested as a stand-alone device,

  • RIN= 6 x 104 Ω,
  • CIN= 16 x 10–12 F,
  • RISO= 109 Ω and
  • CISO= 10–12 F.

Notice from Figure 9-2 that the resistor ratio determines the voltage ratio at low frequencies, and that the inverse capacitance ratio determines the voltage ration at high frequencies. In the stand-alone case and for low frequencies,

Equation 2. GUID-4319AA58-1349-4ACE-90AD-23A71D727633-low.gif

or essentially all of the noise appears across the barrier.

At high frequencies,

Equation 3. GUID-1FE6B71D-084B-4EB6-818F-59D7F7926288-low.gif

and 94% of VN appears across the barrier. As long as RISO is greater than RIN and CISO is less than CIN, most of the transient noise appears across the isolation barrier, as it should.

Using ESD generators to test equipment transient susceptibility, or considering product claims of ESD ratings greater than the barrier transient ratings of an isolated interface is not recommended. ESD is best managed through recessing or covering connector pins in a conductive connector shell, and by proper installer training.