SBOS074E September   1997  – June 2018 ISO124

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
      1. 7.1.1 Modulator
      2. 7.1.2 Demodulator
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Isolation Amplifier
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Carrier Frequency Considerations
      2. 8.1.2 Isolation Mode Voltage Induced Errors
      3. 8.1.3 High IMV dV/dt Errors
      4. 8.1.4 High Voltage Testing
    2. 8.2 Typical Applications
      1. 8.2.1 Output Filters
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Battery Monitor
      3. 8.2.3 Programmable Gain Amplifier
      4. 8.2.4 Thermocouple Amplifier
      5. 8.2.5 Isolated 4-mA to 20-mA Instrument Loop
      6. 8.2.6 Single-Supply Operation of the ISO124 Isolation Amplifier
      7. 8.2.7 Input-Side Powered ISO Amplifier
      8. 8.2.8 Powered ISO Amplifier With Three-Port Isolation
  9. 9 Power Supply Recommendations
    1. 9.1 Signal and Supply Connections
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • NVF|8
  • DVA|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

at TA = +25°C , VS1 = VS2 = ±15 V, and RL = 2 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ISOLATION
Rated voltage Continuous ac 60 Hz 1500 Vac
100% test(1) Test time = 1 s, partial discharge ≤ 5 pC 2400 Vac
Isolation mode rejection 60 Hz 140 dB
Barrier impedance 1014 || 2 Ω || pF
Leakage current at 60 Hz VISO = 240 Vrms 0.18 0.5 µArms
GAIN
Nominal gain VO = ±10 V 1 V/V
Gain error VO = ±10 V ±0.05 ±0.50 %FSR
Gain vs temperature ±10 ppm/°C
Nonlinearity(2) ±0.005 ±0.010 %FSR
INPUT OFFSET VOLTAGE
Initial offset ±20 ±50 mV
Input offset drift ±200 µV/°C
PSRR Power-supply rejection ratio ±2 mV/V
Noise 4 µV/√Hz
INPUT
Input voltage ±10 ±12.5 V
Resistance 200 kΩ
OUTPUT
Output voltage ±10 ±12.5 V
Current drive ±5 ±15 mA
Capacitive load drive 0.1 µF
Ripple voltage(3) 20 mVp-p
FREQUENCY RESPONSE
Small-signal bandwidth 50 kHz
Slew rate 2 V/µs
Settling Time 0.10% VO = ±10 V 50 µs
Settling Time 0.01% VO = ±10 V 350 µs
Overload recovery time 150 µs
POWER SUPPLIES
IVS1 High-side analog supply current ±5.0 ±7.0 mA
IVS2 Low-side analog supply current ±5.5 ±7.0 mA
(1) Tested at 1.6x rated, fail on 5-pC partial discharge.
(2) Nonlinearity is the peak deviation of the output voltage from the best-fit straight line, and is expressed as the ratio of deviation to FSR.
(3) Ripple frequency is at carrier frequency (500 kHz).