SLLSEQ2A September 2016 – December 2016 ISO5852S-Q1
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.
When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.
The ISO5852S-Q1 device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.