SLLSFZ4 June   2024 ISOM8600

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Power Ratings
    6. 5.6 Electrical Characteristics
    7. 5.7 Switching Characteristics
  7. Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Sizing RIN
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DFG|4
Thermal pad, mechanical data (Package|Pins)

Feature Description

The ISOM8600 is a current controlled isolated switch, and is a reliable pin-to-pin replacement of to existing Opto-MOS devices in DFG package. The isolated switch is normally open, which means the switch on secondary side is in OFF state when the primary LED emulator current is lower than the input trigger current level. In the OFF state, the back-to-back MOSFETs on the secondary side block up to 80V of difference between S1 and S2. Once the primary side LED emulator current goes above input trigger current, the switch on the secondary side turns ON. During the ON state, the secondary side back-to-back FETs can conduct currents up to 150mA. The robust SiO2 dielectric isolation in the ISOM8600 provides a functionally isolated isolation barrier side 1 and side 2 for applications that do not safety certifications.