SLLSFZ4 June   2024 ISOM8600

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Power Ratings
    6. 5.6 Electrical Characteristics
    7. 5.7 Switching Characteristics
  7. 6 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Sizing RIN
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DFG|4
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.6 Electrical Characteristics

 All specifications are at TA = 25 ℃ unless otherwise noted
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
INPUT
VF Input forward voltage IF =  IFT 25°C 0.9 1.1 1.3 V
–55°C to 125°C 0.85 1.1 1.35
IF =  5mA 25°C 1.1 1.3 1.5
–55°C to 125°C 1.1 1.3 1.55
IR Input reverse current VR = 5V –55°C to 125°C 10 μA
CIN Input capacitance f = 1MHz, VF = 0V 25°C 17 28 pF
IFT Input Trigger forward current; see Figure 7-3 Io = 100mA (1), RON = 10Ω (2) 25°C 0.65 0.8 mA
–55°C to 125°C 0.65 1.2
IFT,release Release Trigger Current  IOFF = 1μA at 70V –55°C to 125°C 0.1 mA
VF, release Release Trigger Voltage IOFF = 1μA at 70V –55°C to 125°C 0.7 V
IF(ON) Input on-state forward current Io = 100mA, RON < 10Ω 25°C 0.8 20 mA
Io = 100mA(1), RON < 15Ω –55°C to 125°C 1.2 20
OUTPUT
VOFF Output Blocking voltage IF = 0mA –55°C to 125°C 70 V
RON Output on-state resistance; see Figure 7-3 IF = IFT, Io = 20mA 25°C 6.5 9 Ω
–55°C to 125°C 6.5 12
Output on-state resistance; see Figure 7-3 (1) IF = IFT, Io = 100mA 25°C 7 10
–55°C to 125°C 7 13
IF = IFT, Io = 100mA, t<1s 25°C 7 10
Output on-state resistance; see Figure 7-3 IF = 3mA, Io = 20mA 25°C 5.5 7
–55°C to 125°C 5.5 12
Output on-state resistance; see Figure 7-3 (1) IF = 3mA, Io = 100mA 25°C 6 7.5
–55°C to 125°C 6 12
IF = 3mA, Io = 100mA, t<1s 25°C 5 7
COFF Output off-state capacitance IF = 0mA, VL = 60V, f = 1MHz –55°C to 125°C 6.5 8 pF
ILEAK Output off-state leakage; see Figure 7-2 IF = 0mA, VOFF = 70V 25°C 250 nA
–55°C to 125°C 1 μA
RON FLAT On-state resistance flatness IF = 5mA  25°C 45 75 mΩ
–55°C to 125°C 45 115
RON DRIFT On-state resistance drift across temperature IF = 3mA, Io = 40mA –55°C to 125°C 23 60 mΩ/oC
BW –3dB Bandwidth; see Figure 7-4 IF = 5mA, RL = 50Ω  25°C 100 MHz
IL Insertion Loss (LED On); see Figure 7-4 IF = 5mA, RL = 50Ω, f = 1MHz  25°C -0.45 dB
OISO Off-state Isolation; see Figure 7-5 IF = 0mA , RL = 50Ω, f = 1MHz 25°C -45 dB
(1) Current available to load must be derated by 1mA/°C for TA > 75°C
(2) IFT measured for RON=15Ω for TA > 75°C