SWRS212B May   2017  – April 2018 IWR1642

PRODUCTION DATA.  

  1. 1 Device Overview
    1. 1.1 Features
    2. 1.2 Applications
    3. 1.3 Description
    4. 1.4 Functional Block Diagram
  2. 2 Revision History
  3. 3 Device Comparison
    1. 3.1 Related Products
  4. 4 Terminal Configuration and Functions
    1. 4.1 Pin Diagram
    2. 4.2 Pin Attributes
      1. Table 4-3 PAD IO Register Bit Descriptions
    3. 4.3 Signal Descriptions
      1. Table 4-4 Signal Descriptions - Digital
      2. Table 4-5 Signal Descriptions - Analog
    4. 4.4 Pin Multiplexing
  5. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Power-On Hours (POH)
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Power Supply Specifications
    6. 5.6  Power Consumption Summary
    7. 5.7  RF Specification
    8. 5.8  CPU Specifications
    9. 5.9  Thermal Resistance Characteristics for FCBGA Package [ABL0161]
    10. 5.10 Timing and Switching Characteristics
      1. 5.10.1  Power Supply Sequencing and Reset Timing
      2. 5.10.2  Input Clocks and Oscillators
        1. 5.10.2.1 Clock Specifications
      3. 5.10.3  Multibuffered / Standard Serial Peripheral Interface (MibSPI)
        1. 5.10.3.1 Peripheral Description
        2. 5.10.3.2 MibSPI Transmit and Receive RAM Organization
          1. Table 5-7   SPI Timing Conditions
          2. Table 5-8   SPI Master Mode Switching Parameters (CLOCK PHASE = 0, SPICLK = output, SPISIMO = output, and SPISOMI = input)
          3. Table 5-9   SPI Master Mode Input Timing Requirements (CLOCK PHASE = 0, SPICLK = output, SPISIMO = output, and SPISOMI = input)
          4. Table 5-10 SPI Master Mode Switching Parameters (CLOCK PHASE = 1, SPICLK = output, SPISIMO = output, and SPISOMI = input)
          5. Table 5-11 SPI Master Mode Input Requirements (CLOCK PHASE = 1, SPICLK = output, SPISIMO = output, and SPISOMI = input)
        3. 5.10.3.3 SPI Slave Mode I/O Timings
          1. Table 5-12 SPI Slave Mode Switching Parameters (SPICLK = input, SPISIMO = input, and SPISOMI = output)
          2. Table 5-13 SPI Slave Mode Timing Requirements (SPICLK = input, SPISIMO = input, and SPISOMI = output)
        4. 5.10.3.4 Typical Interface Protocol Diagram (Slave Mode)
      4. 5.10.4  LVDS Interface Configuration
        1. 5.10.4.1 LVDS Interface Timings
      5. 5.10.5  General-Purpose Input/Output
        1. Table 5-15 Switching Characteristics for Output Timing versus Load Capacitance (CL)
      6. 5.10.6  Controller Area Network Interface (DCAN)
        1. Table 5-16 Dynamic Characteristics for the DCANx TX and RX Pins
      7. 5.10.7  Serial Communication Interface (SCI)
        1. Table 5-17 SCI Timing Requirements
      8. 5.10.8  Inter-Integrated Circuit Interface (I2C)
        1. Table 5-18 I2C Timing Requirements
      9. 5.10.9  Quad Serial Peripheral Interface (QSPI)
        1. Table 5-19 QSPI Timing Conditions
        2. Table 5-20 Timing Requirements for QSPI Input (Read) Timings
        3. Table 5-21 QSPI Switching Characteristics
      10. 5.10.10 ETM Trace Interface
        1. Table 5-22 ETMTRACE Timing Conditions
        2. Table 5-23 ETM TRACE Switching Characteristics
      11. 5.10.11 Data Modification Module (DMM)
        1. Table 5-24 DMM Timing Requirements
      12. 5.10.12 JTAG Interface
        1. Table 5-25 JTAG Timing Conditions
        2. Table 5-26 Timing Requirements for IEEE 1149.1 JTAG
        3. Table 5-27 Switching Characteristics Over Recommended Operating Conditions for IEEE 1149.1 JTAG
  6. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Subsystems
      1. 6.3.1 RF and Analog Subsystem
        1. 6.3.1.1 Clock Subsystem
        2. 6.3.1.2 Transmit Subsystem
        3. 6.3.1.3 Receive Subsystem
      2. 6.3.2 Processor Subsystem
      3. 6.3.3 Host Interface
      4. 6.3.4 Master Subsystem Cortex-R4F Memory Map
      5. 6.3.5 DSP Subsystem Memory Map
    4. 6.4 Other Subsystems
      1. 6.4.1 ADC Channels (Service) for User Application
        1. Table 6-3 GP-ADC Parameter
  7. 7 Monitoring and Diagnostics
    1. 7.1 Monitoring and Diagnostic Mechanisms
      1. 7.1.1 Error Signaling Module
  8. 8 Applications, Implementation, and Layout
    1. 8.1 Application Information
    2. 8.2 Reference Schematic
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
      2. 8.3.2 Layout Example
      3. 8.3.3 Stackup Details
  9. 9 Device and Documentation Support
    1. 9.1 Device Nomenclature
    2. 9.2 Tools and Software
    3. 9.3 Documentation Support
    4. 9.4 Community Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Export Control Notice
    8. 9.8 Glossary
  10. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Packaging Information
      1. 10.1 Packaging Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • ABL|161
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Absolute Maximum Ratings(1)(2)

Tjunction temperature range (unless otherwise noted)
PARAMETERS MIN MAX UNIT
VDDIN 1.2 V digital power supply –0.5 1.4 V
VIN_SRAM 1.2 V power rail for internal SRAM –0.5 1.4 V
VNWA 1.2 V power rail for SRAM array back bias –0.5 1.4 V
VIOIN I/O supply (3.3 V or 1.8 V): All CMOS I/Os would operate on this supply. –0.5 3.8 V
VIOIN_18 1.8 V supply for CMOS IO –0.5 2 V
VIN_18CLK 1.8 V supply for clock module –0.5 2 V
VIOIN_18DIFF 1.8 V supply for port
VIOIN_18DIFF 1.8 V supply for LVDS port –0.5 2 V
VIN_13RF1 1.3 V Analog and RF supply, VIN_13RF1 and VIN_13RF2 could be shorted on the board. –0.5 1.45 V
VIN_13RF2
VIN_13RF1 1-V Internal LDO bypass mode. Device supports mode where external Power Management block can supply 1 V on VIN_13RF1 and VIN_13RF2 rails. In this configuration, the internal LDO of the device would be kept bypassed. –0.5 1.4 V
VIN_13RF2
VIN_18BB 1.8-V Analog baseband power supply –0.5 2 V
VIN_18VCO supply 1.8-V RF VCO supply –0.5 2 V
Input and output voltage range Dual-voltage LVCMOS inputs, 3.3 V or 1.8 V (Steady State) –0.3V VIOIN + 0.3 V
Dual-voltage LVCMOS inputs, operated at 3.3 V/1.8 V
(Transient Overshoot/Undershoot) or external oscillator input		 VIOIN + 20% up to
20% of signal period
CLKP, CLKM Input ports for reference crystal or external oscillator input –0.5 2 V
Clamp current Input or Output Voltages 0.3 V above or below their respective power rails. Limit clamp current that flows through the internal diode protection cells of the I/O. –20 20 mA
TJ Operating junction temperature range –40 105 ºC
TSTG Storage temperature range after soldered onto PC board –55 150 ºC
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.