SWRS298A December   2022  – March 2024 IWRL6432

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Related Products
  7. 6 Terminal Configurations and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Signal Descriptions
      1.      11
      2.      12
      3.      13
      4.      14
      5.      15
      6.      16
      7.      17
      8.      18
      9.      19
      10.      20
      11.      21
      12.      22
      13.      23
      14.      24
      15.      25
      16.      26
      17.      27
    3.     28
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Power-On Hours (POH)
    4. 7.4  Recommended Operating Conditions
    5. 7.5  VPP Specifications for One-Time Programmable (OTP) eFuses
      1. 7.5.1 Recommended Operating Conditions for OTP eFuse Programming
      2. 7.5.2 Hardware Requirements
      3. 7.5.3 Impact to Your Hardware Warranty
    6. 7.6  Power Supply Specifications
      1. 7.6.1 Power Optimized 3.3V I/O Topology
      2. 7.6.2 BOM Optimized 3.3V I/O Topology
      3. 7.6.3 Power Optimized 1.8V I/O Topology
      4. 7.6.4 BOM Optimized 1.8V I/O Topology
      5. 7.6.5 System Topologies
        1. 7.6.5.1 Power Topologies
          1. 7.6.5.1.1 BOM Optimized Mode
          2. 7.6.5.1.2 Power Optimized Mode
      6. 7.6.6 Internal LDO output decoupling capacitor and layout conditions for BOM optimized topology
        1. 7.6.6.1 Single-capacitor rail
          1. 7.6.6.1.1 1.2V Digital LDO
        2. 7.6.6.2 Two-capacitor rail
          1. 7.6.6.2.1 1.2V RF LDO
          2. 7.6.6.2.2 1.2V SRAM LDO
          3. 7.6.6.2.3 1.0V RF LDO
      7. 7.6.7 Noise and Ripple Specifications
    7. 7.7  Power Save Modes
      1. 7.7.1 Typical Power Consumption Numbers
    8. 7.8  Peak Current Requirement per Voltage Rail
    9. 7.9  RF Specification
    10. 7.10 Supported DFE Features
    11. 7.11 CPU Specifications
    12. 7.12 Thermal Resistance Characteristics
    13. 7.13 Timing and Switching Characteristics
      1. 7.13.1  Power Supply Sequencing and Reset Timing
      2. 7.13.2  Synchronized Frame Triggering
      3. 7.13.3  Input Clocks and Oscillators
        1. 7.13.3.1 Clock Specifications
      4. 7.13.4  MultiChannel buffered / Standard Serial Peripheral Interface (McSPI)
        1. 7.13.4.1 McSPI Features
        2. 7.13.4.2 SPI Timing Conditions
        3. 7.13.4.3 SPI—Controller Mode
          1. 7.13.4.3.1 Timing and Switching Requirements for SPI - Controller Mode
          2. 7.13.4.3.2 Timing and Switching Characteristics for SPI Output Timings—Controller Mode
        4. 7.13.4.4 SPI—Peripheral Mode
          1. 7.13.4.4.1 Timing and Switching Requirements for SPI - Peripheral Mode
          2. 7.13.4.4.2 Timing and Switching Characteristics for SPI Output Timings—Secondary Mode
      5. 7.13.5  RDIF Interface Configuration
        1. 7.13.5.1 RDIF Interface Timings
        2. 7.13.5.2 RDIF Data Format
      6. 7.13.6  General-Purpose Input/Output
        1. 7.13.6.1 Switching Characteristics for Output Timing versus Load Capacitance (CL)
      7. 7.13.7  Controller Area Network - Flexible Data-rate (CAN-FD)
        1. 7.13.7.1 Dynamic Characteristics for the CANx TX and RX Pins
      8. 7.13.8  Serial Communication Interface (SCI)
        1. 7.13.8.1 SCI Timing Requirements
      9. 7.13.9  Inter-Integrated Circuit Interface (I2C)
        1. 7.13.9.1 I2C Timing Requirements
      10. 7.13.10 Quad Serial Peripheral Interface (QSPI)
        1. 7.13.10.1 QSPI Timing Conditions
        2. 7.13.10.2 Timing Requirements for QSPI Input (Read) Timings
        3. 7.13.10.3 QSPI Switching Characteristics
      11. 7.13.11 JTAG Interface
        1. 7.13.11.1 JTAG Timing Conditions
        2. 7.13.11.2 Timing Requirements for IEEE 1149.1 JTAG
        3. 7.13.11.3 Switching Characteristics Over Recommended Operating Conditions for IEEE 1149.1 JTAG
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Subsystems
      1. 8.3.1 RF and Analog Subsystem
      2. 8.3.2 Clock Subsystem
      3. 8.3.3 Transmit Subsystem
      4. 8.3.4 Receive Subsystem
      5. 8.3.5 Processor Subsystem
      6. 8.3.6 Host Interface
      7. 8.3.7 Application Subsystem Cortex-M4F
      8. 8.3.8 Hardware Accelerator (HWA1.2) Features
        1. 8.3.8.1 Hardware Accelerator Feature Differences Between HWA1.1 and HWA1.2
    4. 8.4 Other Subsystems
      1. 8.4.1 GPADC Channels (Service) for User Application
      2. 8.4.2 GPADC Parameters
    5. 8.5 Memory Partitioning Options
    6. 8.6 Boot Modes
  10. 9 Monitoring and Diagnostics
  11. 10Applications, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 Reference Schematic
  12. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
    3. 11.3 Documentation Support
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
  • AMF|102
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.13.3.1 Clock Specifications

The requires external clock source (that is, a 40MHz crystal or external oscillator to CLKP) for initial boot and as a reference for an internal APLL hosted in the device. An external crystal connected to the device pins Figure 7-10 shows the crystal implementation.

GUID-EDE3039E-2AF2-4B30-B258-B2D36CF1C9A4-low.gif Figure 7-10 Crystal Implementation
Note:

The load capacitors, Cf1 and Cf2 in Figure 7-10, should be chosen such that Equation 1 is satisfied. CL in the equation is the load specified by the crystal manufacturer. All discrete components used to implement the oscillator circuit should be placed as close as possible to the associated oscillator CLKP and CLKM pins.

Equation 1. GUID-ABEB21DF-C4ED-46A1-8A95-1E534ADF5429-low.gif

Table 7-17 lists the electrical characteristics of the clock crystal.

Table 7-17 Crystal Electrical Characteristics (Oscillator Mode)
NAME DESCRIPTION MIN TYP MAX UNIT
fP Parallel resonance crystal frequency 40 MHz
CL Crystal load capacitance 5 8 12 pF
ESR Crystal ESR 50 Ω
Temperature range Expected temperature range of operation –40 105 °C
Frequency tolerance Crystal frequency tolerance(1)(2)(3) –200 200 ppm
Drive level 50 200 µW
(1) The crystal manufacturer's specification must satisfy this requirement.
(2) Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load capacitance.
(3) Crystal tolerance affects radar sensor accuracy.

In the case where an external clock is used as the clock resource, the signal is fed to the CLKP pin only; CLKM is grounded. The phase noise requirement is very important when a 40MHz clock is fed externally. Table 7-18 lists the electrical characteristics of the external clock signal.

Table 7-18 External Clock Mode Specifications
PARAMETER SPECIFICATION UNIT
MIN TYP MAX
Input Clock:
External AC-coupled sine wave or DC-coupled square wave Phase Noise referred to 40MHz		 Frequency 40 MHz
AC-Amplitude 700 1200 mV (pp)
DCVil 0.00 0.20 V
DCVih 1.6 1.95 V
Phase Noise at 1kHZ –132 dBc/Hz
Phase Noise at 10 kHZ –143 dBc/Hz
Phase Noise at 100 kHZ –152 dBc/Hz
Phase Noise at 1MHz –153 dBc/Hz
Duty Cycle 35 65 %
Frequency Tolerance -200 200 ppm