SWRS298A December   2022  – March 2024 IWRL6432

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Related Products
  7. 6 Terminal Configurations and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Signal Descriptions
      1.      11
      2.      12
      3.      13
      4.      14
      5.      15
      6.      16
      7.      17
      8.      18
      9.      19
      10.      20
      11.      21
      12.      22
      13.      23
      14.      24
      15.      25
      16.      26
      17.      27
    3.     28
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Power-On Hours (POH)
    4. 7.4  Recommended Operating Conditions
    5. 7.5  VPP Specifications for One-Time Programmable (OTP) eFuses
      1. 7.5.1 Recommended Operating Conditions for OTP eFuse Programming
      2. 7.5.2 Hardware Requirements
      3. 7.5.3 Impact to Your Hardware Warranty
    6. 7.6  Power Supply Specifications
      1. 7.6.1 Power Optimized 3.3V I/O Topology
      2. 7.6.2 BOM Optimized 3.3V I/O Topology
      3. 7.6.3 Power Optimized 1.8V I/O Topology
      4. 7.6.4 BOM Optimized 1.8V I/O Topology
      5. 7.6.5 System Topologies
        1. 7.6.5.1 Power Topologies
          1. 7.6.5.1.1 BOM Optimized Mode
          2. 7.6.5.1.2 Power Optimized Mode
      6. 7.6.6 Internal LDO output decoupling capacitor and layout conditions for BOM optimized topology
        1. 7.6.6.1 Single-capacitor rail
          1. 7.6.6.1.1 1.2V Digital LDO
        2. 7.6.6.2 Two-capacitor rail
          1. 7.6.6.2.1 1.2V RF LDO
          2. 7.6.6.2.2 1.2V SRAM LDO
          3. 7.6.6.2.3 1.0V RF LDO
      7. 7.6.7 Noise and Ripple Specifications
    7. 7.7  Power Save Modes
      1. 7.7.1 Typical Power Consumption Numbers
    8. 7.8  Peak Current Requirement per Voltage Rail
    9. 7.9  RF Specification
    10. 7.10 Supported DFE Features
    11. 7.11 CPU Specifications
    12. 7.12 Thermal Resistance Characteristics
    13. 7.13 Timing and Switching Characteristics
      1. 7.13.1  Power Supply Sequencing and Reset Timing
      2. 7.13.2  Synchronized Frame Triggering
      3. 7.13.3  Input Clocks and Oscillators
        1. 7.13.3.1 Clock Specifications
      4. 7.13.4  MultiChannel buffered / Standard Serial Peripheral Interface (McSPI)
        1. 7.13.4.1 McSPI Features
        2. 7.13.4.2 SPI Timing Conditions
        3. 7.13.4.3 SPI—Controller Mode
          1. 7.13.4.3.1 Timing and Switching Requirements for SPI - Controller Mode
          2. 7.13.4.3.2 Timing and Switching Characteristics for SPI Output Timings—Controller Mode
        4. 7.13.4.4 SPI—Peripheral Mode
          1. 7.13.4.4.1 Timing and Switching Requirements for SPI - Peripheral Mode
          2. 7.13.4.4.2 Timing and Switching Characteristics for SPI Output Timings—Secondary Mode
      5. 7.13.5  RDIF Interface Configuration
        1. 7.13.5.1 RDIF Interface Timings
        2. 7.13.5.2 RDIF Data Format
      6. 7.13.6  General-Purpose Input/Output
        1. 7.13.6.1 Switching Characteristics for Output Timing versus Load Capacitance (CL)
      7. 7.13.7  Controller Area Network - Flexible Data-rate (CAN-FD)
        1. 7.13.7.1 Dynamic Characteristics for the CANx TX and RX Pins
      8. 7.13.8  Serial Communication Interface (SCI)
        1. 7.13.8.1 SCI Timing Requirements
      9. 7.13.9  Inter-Integrated Circuit Interface (I2C)
        1. 7.13.9.1 I2C Timing Requirements
      10. 7.13.10 Quad Serial Peripheral Interface (QSPI)
        1. 7.13.10.1 QSPI Timing Conditions
        2. 7.13.10.2 Timing Requirements for QSPI Input (Read) Timings
        3. 7.13.10.3 QSPI Switching Characteristics
      11. 7.13.11 JTAG Interface
        1. 7.13.11.1 JTAG Timing Conditions
        2. 7.13.11.2 Timing Requirements for IEEE 1149.1 JTAG
        3. 7.13.11.3 Switching Characteristics Over Recommended Operating Conditions for IEEE 1149.1 JTAG
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Subsystems
      1. 8.3.1 RF and Analog Subsystem
      2. 8.3.2 Clock Subsystem
      3. 8.3.3 Transmit Subsystem
      4. 8.3.4 Receive Subsystem
      5. 8.3.5 Processor Subsystem
      6. 8.3.6 Host Interface
      7. 8.3.7 Application Subsystem Cortex-M4F
      8. 8.3.8 Hardware Accelerator (HWA1.2) Features
        1. 8.3.8.1 Hardware Accelerator Feature Differences Between HWA1.1 and HWA1.2
    4. 8.4 Other Subsystems
      1. 8.4.1 GPADC Channels (Service) for User Application
      2. 8.4.2 GPADC Parameters
    5. 8.5 Memory Partitioning Options
    6. 8.6 Boot Modes
  10. 9 Monitoring and Diagnostics
  11. 10Applications, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 Reference Schematic
  12. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
    3. 11.3 Documentation Support
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
  • AMF|102
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.7.1 Typical Power Consumption Numbers

Table 7-11 and Table 7-12 lists the typical power consumption for each power save modes in different power topologies and antenna configurations for a nominal device at 25C ambient temperature and nominal voltage conditions.

Table 7-11 Estimated Power Consumed in 3.3V IO Mode
Power Mode Power Consumption (mW)
Power Optimized Mode BOM Optimized Mode
Active (2TX, 3RX)

Sampling: 12.5 MSps,

Start freq = 60GHz

BW = 2GHz

RX gain = 30dB

TX back off = 0dB

 960 1290
Active (2TX, 2RX) 870 1180
Active (1TX, 2RX)

720

 950
Active (1TX, 1RX) 690 910
Processing Major motion SDK OOB chain is used for measurement. 80 120
Idle

APPSS CM4 = 20MHz, FECSS, HWA powered off, SPI active

 11.2 19.0
Deep sleep

Memory Retained = 114KB

 0.66 0.67
Table 7-12 Estimated Power Consumed in 1.8V IO Mode
Power Mode Power Consumption (mW)
Power Optimized Mode BOM Optimized Mode
Active (2TX, 3RX)

Sampling: 12.5 MSps,

Start freq = 60GHz

BW = 2GHz

RX gain = 30dB

TX back off = 0dB

 960 1290
Active (2TX, 2RX) 870 1180
Active (1TX, 2RX)

720

 950
Active (1TX, 1RX) 690 910
Processing Major motion SDK OOB chain is used for measurement. 80 120
Idle APPSS CM4 = 20MHz, FECSS, HWA powered off, SPI active 10.9 18.6
Deep Sleep

Memory Retained = 114KB

 0.48 0.48
Table 7-13 Use-Case Power Consumed in 3.3V Power Optimized Topology
Parameter Condition Typical (mW)
Average Power Consumption (Presence Detection -Major Motion) RF Front End Configuration : 1TX, 1RX

ADC Sampling Rate = 12.5Msps

Ramp End time = 25us

Chirp Idle Time = 6us

Chirp Slope = 35MHz/us

Number of chirps per burst = 10

Burst Periodicity = 300us

Number of bursts per frame = 1

Device configured to go to deep sleep state after active operation. Memory Retained in deep sleep = 114KB		 1Hz Update Rate 1.2