SNOSCZ0A December   2014  – March 2018 LDC1312 , LDC1314

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Measurement Precision vs. Target Distance
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics - I2C
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Multi-Channel and Single Channel Operation
      2. 7.3.2 Adjustable Conversion Time
      3. 7.3.3 Digital Signal Gain
      4. 7.3.4 Sensor Startup and Glitch Configuration
      5. 7.3.5 Reference Clock
      6. 7.3.6 Sensor Current Drive Control
      7. 7.3.7 Device Status Monitoring
    4. 7.4 Device Functional Modes
      1. 7.4.1 Startup Mode
      2. 7.4.2 Sleep Mode (Configuration Mode)
      3. 7.4.3 Normal (Conversion) Mode
      4. 7.4.4 Shutdown Mode
        1. 7.4.4.1 Reset
    5. 7.5 Programming
      1. 7.5.1 I2C Interface Specifications
      2. 7.5.2 Pulses on I2C
    6. 7.6 Register Maps
      1. 7.6.1  Register List
      2. 7.6.2  Address 0x00, DATA0
        1. Table 1. Address 0x00, DATA0 Field Descriptions
      3. 7.6.3  Address 0x02, DATA1
        1. Table 2. Address 0x02, DATA1 Field Descriptions
      4. 7.6.4  Address 0x04, DATA2 (LDC1314 only)
        1. Table 3. Address 0x04, DATA2 Field Descriptions
      5. 7.6.5  Address 0x06, DATA3 (LDC1314 only)
        1. Table 4. Address 0x06, DATA3 Field Descriptions
      6. 7.6.6  Address 0x08, RCOUNT0
        1. Table 5. Address 0x08, RCOUNT0 Field Descriptions
      7. 7.6.7  Address 0x09, RCOUNT1
        1. Table 6. Address 0x09, RCOUNT1 Field Descriptions
      8. 7.6.8  Address 0x0A, RCOUNT2 (LDC1314 only)
        1. Table 7. Address 0x0A, RCOUNT2 Field Descriptions
      9. 7.6.9  Address 0x0B, RCOUNT3 (LDC1314 only)
        1. Table 8. Address 0x0B, RCOUNT3 Field Descriptions
      10. 7.6.10 Address 0x0C, OFFSET0
        1. Table 9. OFFSET0 Field Descriptions
      11. 7.6.11 Address 0x0D, OFFSET1
        1. Table 10. Address 0x0D, OFFSET1 Field Descriptions
      12. 7.6.12 Address 0x0E, OFFSET2 (LDC1314 only)
        1. Table 11. Address 0x0E, OFFSET2 Field Descriptions
      13. 7.6.13 Address 0x0F, OFFSET3 (LDC1314 only)
        1. Table 12. Address 0x0F, OFFSET3 Field Descriptions
      14. 7.6.14 Address 0x10, SETTLECOUNT0
        1. Table 13. Address 0x10, SETTLECOUNT0 Field Descriptions
      15. 7.6.15 Address 0x11, SETTLECOUNT1
        1. Table 14. Address 0x11, SETTLECOUNT1 Field Descriptions
      16. 7.6.16 Address 0x12, SETTLECOUNT2 (LDC1314 only)
        1. Table 15. Address 0x12, SETTLECOUNT2 Field Descriptions
      17. 7.6.17 Address 0x13, SETTLECOUNT3 (LDC1314 only)
        1. Table 16. Address 0x13, SETTLECOUNT3 Field Descriptions
      18. 7.6.18 Address 0x14, CLOCK_DIVIDERS0
        1. Table 17. Address 0x14, CLOCK_DIVIDERS0 Field Descriptions
      19. 7.6.19 Address 0x15, CLOCK_DIVIDERS1
        1. Table 18. Address 0x15, CLOCK_DIVIDERS1 Field Descriptions
      20. 7.6.20 Address 0x16, CLOCK_DIVIDERS2 (LDC1314 only)
        1. Table 19. Address 0x16, CLOCK_DIVIDERS2 Field Descriptions
      21. 7.6.21 Address 0x17, CLOCK_DIVIDERS3 (LDC1314 only)
        1. Table 20. Address 0x17, CLOCK_DIVIDERS3
      22. 7.6.22 Address 0x18, STATUS
        1. Table 21. Address 0x18, STATUS Field Descriptions
      23. 7.6.23 Address 0x19, ERROR_CONFIG
        1. Table 22. Address 0x19, ERROR_CONFIG
      24. 7.6.24 Address 0x1A, CONFIG
        1. Table 23. Address 0x1A, CONFIG Field Descriptions
      25. 7.6.25 Address 0x1B, MUX_CONFIG
        1. Table 24. Address 0x1B, MUX_CONFIG Field Descriptions
      26. 7.6.26 Address 0x1C, RESET_DEV
        1. Table 25. Address 0x1C, RESET_DEV Field Descriptions
      27. 7.6.27 Address 0x1E, DRIVE_CURRENT0
        1. Table 26. Address 0x1E, DRIVE_CURRENT0 Field Descriptions
      28. 7.6.28 Address 0x1F, DRIVE_CURRENT1
        1. Table 27. Address 0x1F, DRIVE_CURRENT1 Field Descriptions
      29. 7.6.29 Address 0x20, DRIVE_CURRENT2 (LDC1314 only)
        1. Table 28. Address 0x20, DRIVE_CURRENT2 Field Descriptions
      30. 7.6.30 Address 0x21, DRIVE_CURRENT3 (LDC1314 only)
        1. Table 29. DRIVE_CURRENT3 Field Descriptions
      31. 7.6.31 Address 0x7E, MANUFACTURER_ID
        1. Table 30. Address 0x7E, MANUFACTURER_ID Field Descriptions
      32. 7.6.32 Address 0x7F, DEVICE_ID
        1. Table 31. Address 0x7F, DEVICE_ID Field Descriptions
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Conductive Objects in a Time-Varying EM Field
      2. 8.1.2 L-C Resonators
      3. 8.1.3 Multi-Channel and Single Channel Operation
        1. 8.1.3.1 Data Offset
        2. 8.1.3.2 Digital Signal Gain
      4. 8.1.4 Sensor Conversion Time
        1. 8.1.4.1 Settling Time
        2. 8.1.4.2 Sensor Activation
      5. 8.1.5 Sensor Current Drive Configuration
        1. 8.1.5.1 Inactive Channel Sensor Connections
        2. 8.1.5.2 Automatic IDRIVE Setting with RP_OVERRIDE_EN
        3. 8.1.5.3 Determining Sensor IDRIVE for an Unknown Sensor RP Using an Oscilloscope
        4. 8.1.5.4 Sensor Auto-Calibration Mode
        5. 8.1.5.5 Channel 0 High Current Drive
      6. 8.1.6 Clocking Architecture
      7. 8.1.7 Input Deglitch Filter
      8. 8.1.8 Device Status Registers
      9. 8.1.9 Multi-Channel Data Readback
    2. 8.2 Typical Application
      1. 8.2.1 System Sensing Functionality
      2. 8.2.2 Example Application
      3. 8.2.3 Design Requirements
      4. 8.2.4 Detailed Design Procedure
      5. 8.2.5 Recommended Initial Register Configuration Values
      6. 8.2.6 Application Curves
      7. 8.2.7 Inductor Self-Resonant Frequency
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Community Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

Unless otherwise specified, all limits ensured for TA = 25°C, VDD = 3.3 V. See (4)
PARAMETER TEST CONDITIONS(3) MIN(5) TYP(6) MAX(5) UNIT
POWER
VDD Supply Voltage TA = -40°C to +125°C 2.7 3.6 V
IDD Supply Current (not including sensor current)(1) ƒCLKIN = 10 MHz (2) 2.1 mA
IDDSL Sleep Mode Supply Current(1) SLEEP_MODE_EN = b1 35 60 µA
ISD Shutdown Mode Supply Current(1) SD = VDD 0.2 1 µA
SENSOR
ISENSORMAX Sensor Maximum Current drive HIGH_CURRENT_DRV = b0
DRIVE_CURRENTx = 0xF800		 1.5 mA
RP Sensor RP 1 100 kΩ
IHDSENSORMAX High current sensor drive mode: Sensor Maximum Current HIGH_CURRENT_DRV = b1
DRIVE_CURRENT0 = 0xF800
Channel 0 only		 6 mA
RP_HD_MIN Minimum sensor RP 250 Ω
ƒSENSOR Sensor Resonance Frequency TA = -40°C to +125°C 0.001 10 MHz
VSENSORMAX Maximum oscillation amplitude (peak) 1.8 V
NBITS Number of bits RESET_DEV.OUTPUT_GAIN=b00 12 bits
RCOUNTx ≥ 0x0400
ƒCS Maximum Channel Sample Rate single active channel continuous conversion, SCL=400 kHz 13.3 kSPS
CIN Sensor Pin input capacitance 4 pF
DIGITAL PIN LEVELS
VIL Low voltage threshold (ADDR and SD) 0.3*VDD V
VIH High voltage threshold (ADDR and SD) 0.7*VDD V
VOL INTB low voltage output level 3mA sink current 0.4 V
VOH INTB high voltage output level 2.4 V
REFERENCE CLOCK
ƒCLKIN External Reference Clock Input Frequency (CLKIN) TA = -40°C to +125°C 2 40 MHz
CLKINDUTY_MIN External Reference Clock minimum acceptable duty cycle (CLKIN) 40%
CLKINDUTY_MAX External Reference Clock maximum acceptable duty cycle (CLKIN) 60%
VCLKIN_LO CLKIN low voltage threshold 0.3*VDD V
VCLKIN_HI CLKIN high voltage threshold 0.7*VDD V
ƒINTCLK Internal Reference Clock Frequency range 35 43.4 55 MHz
TCf_int_μ Internal Reference Clock Temperature Coefficient mean -13 ppm/°C
TIMING CHARACTERISTICS
tWAKEUP Wake-up Time from SD high-low transition to I2C readback 2 ms
tWD-TIMEOUT Sensor recovery time (after watchdog timeout) 5.2 ms
(1) I2C read/write communication and pull-up resistors current through SCL, SDA not included.
(2) Sensor inductor: 2 layer, 32 turns/layer, 14 mm diameter, PCB inductor with L=19.4 µH, RP=5.7 kΩ at 2 MHz Sensor capacitor: 330 pF 1% COG/NP0 Target: Aluminum, 1.5 mm thickness Channel = Channel 0 (continuous mode) ƒCLKIN = 40 MHz, FIN_DIVIDER0 = b0000, FREF_DIVIDER0 = 0x0001, RCOUNT0 = 0xFFFF, SETTLECOUNT0 = 0x0100, RP_OVERRIDE = b1, AUTO_AMP_DIS = b1, DRIVE_CURRENT0 = 0x9800
(3) Register values are represented as either binary (b is the prefix to the digits), or hexadecimal (0x is the prefix to the digits). Decimal values have no prefix.
(4) Electrical Characteristics Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ> TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(5) Limits are ensured by testing, design, or statistical analysis at 25°C. Limits over the operating temperature range are ensured through correlations using statistical quality control (SQC) method.
(6) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.