SNOSCZ8 April   2016 LDC1612-Q1 , LDC1614-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description Continued
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Characteristics
    7. 7.7 Switching Characteristics - I2C
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Clocking Architecture
      2. 8.3.2 Multi-Channel and Single Channel Operation
      3. 8.3.3 Current Drive Control Registers
      4. 8.3.4 Device Status Registers
      5. 8.3.5 Input Deglitch Filter
    4. 8.4 Device Functional Modes
      1. 8.4.1 Startup Mode
      2. 8.4.2 Normal (Conversion) Mode
      3. 8.4.3 Sleep Mode
      4. 8.4.4 Shutdown Mode
        1. 8.4.4.1 Reset
    5. 8.5 Programming
      1. 8.5.1 I2C Interface Specifications
    6. 8.6 Register Maps
      1. 8.6.1  Register List
      2. 8.6.2  Address 0x00, DATA_MSB_CH0
      3. 8.6.3  Address 0x01, DATA_LSB_CH0
      4. 8.6.4  Address 0x02, DATA_MSB_CH1
      5. 8.6.5  Address 0x03, DATA_LSB_CH1
      6. 8.6.6  Address 0x04, DATA_MSB_CH2 (LDC1614 only)
      7. 8.6.7  Address 0x05, DATA_LSB_CH2 (LDC1614 only)
      8. 8.6.8  Address 0x06, DATA_MSB_CH3 (LDC1614 only)
      9. 8.6.9  Address 0x07, DATA_LSB_CH3 (LDC1614 only)
      10. 8.6.10 Address 0x08, RCOUNT_CH0
      11. 8.6.11 Address 0x09, RCOUNT_CH1
      12. 8.6.12 Address 0x0A, RCOUNT_CH2 (LDC1614 only)
      13. 8.6.13 Address 0x0B, RCOUNT_CH3 (LDC1614 only)
      14. 8.6.14 Address 0x0C, OFFSET_CH0
      15. 8.6.15 Address 0x0D, OFFSET_CH1
      16. 8.6.16 Address 0x0E, OFFSET_CH2 (LDC1614 only)
      17. 8.6.17 Address 0x0F, OFFSET_CH3 (LDC1614 only)
      18. 8.6.18 Address 0x10, SETTLECOUNT_CH0
      19. 8.6.19 Address 0x11, SETTLECOUNT_CH1
      20. 8.6.20 Address 0x12, SETTLECOUNT_CH2 (LDC1614 only)
      21. 8.6.21 Address 0x13, SETTLECOUNT_CH3 (LDC1614 only)
      22. 8.6.22 Address 0x14, CLOCK_DIVIDERS_CH0
      23. 8.6.23 Address 0x15, CLOCK_DIVIDERS_CH1
      24. 8.6.24 Address 0x16, CLOCK_DIVIDERS_CH2 (LDC1614 only)
      25. 8.6.25 Address 0x17, CLOCK_DIVIDERS_CH3 (LDC1614 only)
      26. 8.6.26 Address 0x18, STATUS
      27. 8.6.27 Address 0x19, ERROR_CONFIG
      28. 8.6.28 Address 0x1A, CONFIG
      29. 8.6.29 Address 0x1B, MUX_CONFIG
      30. 8.6.30 Address 0x1C, RESET_DEV
      31. 8.6.31 Address 0x1E, DRIVE_CURRENT_CH0
      32. 8.6.32 Address 0x1F, DRIVE_CURRENT_CH1
      33. 8.6.33 Address 0x20, DRIVE_CURRENT_CH2 (LDC1614 only)
      34. 8.6.34 Address 0x21, DRIVE_CURRENT_CH3 (LDC1614 only)
      35. 8.6.35 Address 0x7E, MANUFACTURER_ID
      36. 8.6.36 Address 0x7F, DEVICE_ID
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Theory of Operation
        1. 9.1.1.1 Conductive Objects in an EM Field
        2. 9.1.1.2 L-C Resonators
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Recommended Initial Register Configuration Values
        2. 9.2.2.2 Inductor Self-Resonant Frequency
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Related Links
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings

(1)
MIN MAX UNIT
VDD Supply Voltage 5 V
Vi Voltage on any pin –0.3 VDD+0.3 V
IA Input current on any INx pin –8 8 mA
ID Input current on any Digital pin –5 5 mA
Tj Junction Temperature –55 150 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

Unless otherwise specified, all limits ensured for TA = 25°C, VDD = 3.3 V
MIN NOM MAX UNIT
VDD Supply Voltage 2.7 3.6 V
TA Operating Temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) LDC1612 LDC1614 UNIT
DNT (WSON) RGH (WQFN)
12 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 36.7 35.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 36.2 36.2 °C/W
RθJB Junction-to-board thermal resistance 14 13.4 °C/W
ψJT Junction-to-top characterization parameter 0.4 0.4 °C/W
ψJB Junction-to-board characterization parameter 14.2 13.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.5 3.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics (4)

Unless otherwise specified, all limits ensured for TA = 25°C, VDD = 3.3 V
PARAMETER TEST CONDITIONS(3) MIN(5) TYP(6) MAX(5) UNIT
POWER
VDD Supply Voltage TA = –40°C to +125°C 2.7 3.6 V
IDD Supply Current (not including sensor current)(1) CLKIN = 10MHz (2) 2.1 mA
IDDSL Sleep Mode Supply Current(1) 35 60 µA
ISD Shutdown Mode Supply Current(1) 0.2 1 µA
SENSOR
ISENSORMAX Sensor Maximum Current drive HIGH_CURRENT_DRV = b0
DRIVE_CURRENT_CHx = 0xF800		 1.5 mA
RP Sensor RP 1 100 kΩ
IHDSENSORMAX High current sensor drive mode: Sensor Maximum Current HIGH_CURRENT_DRV = b1
DRIVE_CURRENT_CH0 = 0xF800
Channel 0 only		 6 mA
RP_HD_MIN Minimum sensor RP 250 Ω
fSENSOR Sensor Resonance Frequency TA = –40°C to +125°C 0.001 10 MHz
VSENSORMAX Maximum oscillation amplitude (peak) 1.8 V
NBITS Number of bits 28 bits
fCS Maximum Channel Sample Rate single active channel continuous conversion, SCL=400kHz 4.08 kSPS
CIN Sensor Pin input capacitance 4 pF
MASTER CLOCK
fCLKIN External Master Clock Input Frequency (CLKIN) TA = –40°C to +125°C 2 40 MHz
CLKINDUTY_MIN External Master Clock minimum acceptable duty cycle (CLKIN) 40%
CLKINDUTY_MAX External Master Clock maximum acceptable duty cycle (CLKIN) 60%
VCLKIN_LO CLKIN low voltage threshold 0.3ˣVDD V
VCLKIN_HI CLKIN high voltage threshold 0.7ˣVDD V
fINTCLK Internal Master Clock Frequency range 35 43.4 55 MHz
TCf_int_μ Internal Master Clock Temperature Coefficient mean –13 ppm/°C
(1) I2C read/write communication and pullup resistors current through SCL, SDA not included.
(2) Sensor inductor: 2 layer, 32 turns/layer, 14mm diameter, PCB inductor with L=19.4 µH, RP=5.7 kΩ at 2MHz Sensor capacitor: 330 pF 1% COG/NP0 Target: Aluminum, 1.5mm thickness Channel = Channel 0 (continuous mode) CLKIN = 40 MHz, CHx_FIN_DIVIDER = b0000, CHx_FREF_DIVIDER = b00 0000 0001 CH0_RCOUNT = 0xFFFF, SETTLECOUNT_CH0 = 0x0100 RP_OVERRIDE = b1, AUTO_AMP_DIS = b1, DRIVE_CURRENT_CH0 = 0x9800
(3) Register values are represented as either binary (b is the prefix to the digits), or hexadecimal (0x is the prefix to the digits). Decimal values have no prefix.
(4) Electrical Characteristics Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(5) Limits are ensured by testing, design, or statistical analysis at 25°C. Limits over the operating temperature range are ensured through correlations using statistical quality control (SQC) method.
(6) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

7.6 Timing Characteristics

MIN NOM MAX UNIT
tWAKEUP Wake-up Time from SD high-low transition to I2C readback 2 ms
tWD-TIMEOUT Sensor recovery time (after watchdog timeout) 5.2 ms

7.7 Switching Characteristics - I2C

Unless otherwise specified, all limits ensured for TA = 25°C, VDD = 3.3 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOLTAGE LEVELS
VIH Input High Voltage 0.7ˣVDD V
VIL Input Low Voltage 0.3ˣVDD V
VOL Output Low Voltage (3mA sink current) 0.4 V
HYS Hysteresis 0.1ˣVDD V
I2C TIMING CHARACTERISTICS
fSCL Clock Frequency 10 400 kHz
tLOW Clock Low Time 1.3 μs
tHIGH Clock High Time 0.6 μs
tHD;STA Hold Time (repeated) START condition After this period, the first clock pulse is generated 0.6 μs
tSU;STA Set-up time for a repeated START condition 0.6 μs
tHD;DAT Data hold time 0 μs
tSU;DAT Data setup time 100 ns
tSU;STO Set-up time for STOP condition 0.6 μs
tBUF Bus free time between a STOP and START condition 1.3 μs
tVD;DAT Data valid time 0.9 μs
tVD;ACK Data valid acknowledge time 0.9 μs
tSP Pulse width of spikes that must be suppressed by the input filter(1) 50 ns
(1) This parameter is specified by design and/or characterization and is not tested in production.
LDC1612-Q1 LDC1614-Q1 td_I2C_timing_snoscy9.gif Figure 1. I2C Timing

7.8 Typical Characteristics

Common test conditions (unless specified otherwise): Sensor inductor: 2 layer, 32 turns/layer, 14 mm diameter, PCB inductor with L=19.4 µH, RP=5.7 kΩ at 2 MHz; Sensor capacitor: 330 pF 1% COG/NP0; Target: Aluminum, 1.5mm thickness; Channel = Channel 0 (continuous mode); CLKIN = 40 MHz, CHx_FIN_DIVIDER = 0x1, CHx_FREF_DIVIDER = 0x001, CH0_RCOUNT = 0xFFFF, SETTLECOUNT_CH0 = 0x0100, RP_OVERRIDE = 1, AUTO_AMP_DIS = 1, DRIVE_CURRENT_CH0 = 0x9800
LDC1612-Q1 LDC1614-Q1 D003_SNOSCY9.gif
Includes 1.57 mA sensor coil current
–40°C to +125°C
Figure 2. Active Mode IDD vs. Temperature
LDC1612-Q1 LDC1614-Q1 D005_SNOSCY9.gif
–40°C to +125°C
Figure 4. Sleep Mode IDD vs. Temperature
LDC1612-Q1 LDC1614-Q1 D007_SNOSCY9.gif
–40°C to +125°C
Figure 6. Shutdown Mode IDD vs. Temperature
LDC1612-Q1 LDC1614-Q1 D009_SNOSCY9.gif
–40°C to +125°C
Figure 8. Internal Oscillator Frequency vs. Temperature
LDC1612-Q1 LDC1614-Q1 D004_SNOSCY9.gif
Includes 1.57 mA sensor coil current
Figure 3. Active Mode IDD vs. VDD
LDC1612-Q1 LDC1614-Q1 D006_SNOSCY9.gif
Figure 5. Sleep Mode IDD vs. VDD
LDC1612-Q1 LDC1614-Q1 D008_SNOSCY9.gif
Figure 7. Shutdown Mode IDD vs. VDD
LDC1612-Q1 LDC1614-Q1 D010_SNOSCY9.gif
Data based on 1 unit
Figure 9. Internal Oscillator Frequency vs. VDD