SNOSCY9A December 2014 – March 2018 LDC1612 , LDC1614
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS(3) | MIN(5) | TYP(6) | MAX(5) | UNIT | |
---|---|---|---|---|---|---|
POWER | ||||||
VDD | Supply Voltage | TA = -40°C to +125°C | 2.7 | 3.6 | V | |
IDD | Supply Current (not including sensor current)(1) | ƒCLKIN = 10 MHz (2) | 2.1 | mA | ||
IDDSL | Sleep Mode Supply Current(1) | SLEEP_MODE_EN = b1 | 35 | 60 | µA | |
ISD | Shutdown Mode Supply Current(1) | SD = VDD | 0.2 | 1 | µA | |
SENSOR | ||||||
ISENSORMAX | Sensor Maximum Current drive | HIGH_CURRENT_DRV = b0
DRIVE_CURRENTx = 0xF800 |
1.5 | mA | ||
RP | Sensor RP | 1 | 100 | kΩ | ||
IHDSENSORMAX | High current sensor drive mode: Sensor Maximum Current | HIGH_CURRENT_DRV = b1
DRIVE_CURRENT0 = 0xF800 Channel 0 only |
6 | mA | ||
RP_HD_MIN | Minimum sensor RP | 250 | Ω | |||
ƒSENSOR | Sensor Resonance Frequency | TA = -40°C to +125°C | 0.001 | 10 | MHz | |
VSENSORMAX | Maximum oscillation amplitude (peak) | 1.8 | V | |||
NBITS | Number of bits | 28 | bits | |||
ƒCS | Maximum Channel Sample Rate | single active channel continuous conversion, SCL=400 kHz | 4.08 | kSPS | ||
CIN | Sensor Pin input capacitance | 4 | pF | |||
DIGITAL PIN LEVELS | ||||||
VIL | Low voltage threshold (ADDR and SD) | 0.3*VDD | V | |||
VIH | High voltage threshold (ADDR and SD) | 0.7*VDD | V | |||
VOL | INTB low voltage output level | 3mA sink current | 0.4 | V | ||
VOH | INTB high voltage output level | 2.4 | V | |||
REFERENCE CLOCK | ||||||
ƒCLKIN | External Reference Clock Input Frequency (CLKIN) | TA = -40°C to +125°C | 2 | 40 | MHz | |
CLKINDUTY_MIN | External Reference Clock minimum acceptable duty cycle (CLKIN) | 40% | ||||
CLKINDUTY_MAX | External Reference Clock maximum acceptable duty cycle (CLKIN) | 60% | ||||
VCLKIN_LO | CLKIN low voltage threshold | 0.3*VDD | V | |||
VCLKIN_HI | CLKIN high voltage threshold | 0.7*VDD | V | |||
ƒINTCLK | Internal Reference Clock Frequency range | 35 | 43.4 | 55 | MHz | |
TCf_int_μ | Internal Reference Clock Temperature Coefficient mean | -13 | ppm/°C | |||
TIMING CHARACTERISTICS | ||||||
tWAKEUP | Wake-up Time from SD high-low transition to I2C readback | 2 | ms | |||
tWD-TIMEOUT | Sensor recovery time (after watchdog timeout) | 5.2 | ms |