Refer to the PDF data sheet for device specific package drawings
This LF353 device is a low-cost, high-speed, JFET-input operational amplifier with very low input offset voltage. It requires low supply current yet maintains a large gain-bandwidth product and a fast slew rate. In addition, the matched high-voltage JFET input provides very low input bias and offset currents.
The LF353 can be used in applications such as high-speed integrators, digital-to-analog converters, sample-and-hold circuits, and many other circuits.
The LF353 is characterized for operation from 0°C to 70°C.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
LF353D | SOIC (8) | 4.90 mm × 3.91 mm |
LF353P | PDIP (8) | 9.81 mm × 6.35 mm |
Changes from B Revision (August 1994) to C Revision
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
1OUT | 1 | O | Output |
1IN- | 2 | I | Inverting input |
1IN+ | 3 | I | Noninverting input |
VCC- | 4 | — | Negative supply voltage |
2IN+ | 5 | I | Noninverting input |
2IN- | 6 | I | Inverting input |
2OUT | 7 | O | Output |
VCC+ | 8 | — | Positive supply voltage |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VCC+ | Supply voltage | 18 | V | |
VCC– | Supply voltage | –18 | V | |
VID | Differential input voltage | ±30 | V | |
VI | Input voltage(2) | ±15 | V | |
Duration of output short circuit | Unlimited | s | ||
Continuous total power dissipation | 500 | mW | ||
Lead temperature 1.6 mm (1/16 inch) from case for 10 s | 260 | °C | ||
TJ | Junction temperature | 150 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VCC+ | Supply voltage | 3.5 | 18 | V |
VCC– | Supply voltage | –3.5 | –18 | V |
VCM | Common-mode voltage | VCC– + 4 | VCC+ – 4 | V |
TA | Operating temperature | 0 | 70 | °C |
THERMAL METRIC(1) | LF353 | UNIT | ||
---|---|---|---|---|
D (SOIC) | P (PDIP) | |||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 106.6 | 55.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 51.5 | 45 | °C/W |
RθJB | Junction-to-board thermal resistance | 46.5 | 32.2 | °C/W |
ψJT | Junction-to-top characterization parameter | 9.8 | 22.6 | °C/W |
ψJB | Junction-to-board characterization parameter | 46.1 | 32.2 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VIO | Input offset voltage | VIC = 0, RS = 10 kΩ | TA = 25°C | 5 | 10 | mV | |
Full range(1) | 13 | ||||||
αVIO | Average temperature coefficient of inputs offset voltage | VIC = 0, RS = 10 kΩ | 10 | µV/°C | |||
IIO | Input offset current(2) | VIC = 0 | TA = 25°C | 25 | 100 | pA | |
TA = 70°C | 4 | nA | |||||
IIB | Input bias current(2) | VIC = 0 | TA = 25°C | 50 | 200 | pA | |
TA = 70°C | 8 | nA | |||||
VICR | Common-mode input voltage range | Lower limit of range | –11 | –12 | V | ||
Upper limit of range | 11 | 15 | |||||
VOM | Maximum peak output voltage swing | RL = 10 kΩ | ±12 | ±13.5 | V | ||
AVD | Large-signal differential voltage | VO = ±10 V, RL = 2 kΩ | TA = 25°C | 25 | 100 | V/mV | |
Full range(1) | 15 | ||||||
ri | Input resistance | TJ = 25°C | 1012 | Ω | |||
CMRR | Common-mode rejection ratio | RS ≤ 10 kΩ | 70 | 100 | dB | ||
kSVR | Supply-voltage rejection ratio | See (3) | 70 | 100 | dB | ||
ICC | Supply current | 3.6 | 6.5 | mA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VO1/VO2 | Crosstalk attenuation | f = 1 kHz | 120 | dB | ||
SR | Slew rate | 8 | 13 | V/µs | ||
B1 | Unity-gain bandwidth | 3 | MHz | |||
Vn | Equivalent input noise voltage | f = 1 kHz, RS = 20 Ω | 18 | nV/√Hz | ||
In | Equivalent input noise current | f = 1 kHz | 0.01 | pA/√Hz |