SNVS446D June   2006  – January 2016 LM1771

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Timing Opinion
      2. 7.3.2 Short-Circuit Protection
      3. 7.3.3 Precision Enable
      4. 7.3.4 Soft-Start
      5. 7.3.5 Jitter
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 LM1771 Typical Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Design Guide
            1. 8.2.1.2.1.1 Frequency Selection
            2. 8.2.1.2.1.2 Inductor Selection
            3. 8.2.1.2.1.3 Output Capacitor
            4. 8.2.1.2.1.4 Feedforward Capacitor
            5. 8.2.1.2.1.5 Input Capacitor
          2. 8.2.1.2.2 MOSFET Selection
            1. 8.2.1.2.2.1 VDS Voltage Rating
            2. 8.2.1.2.2.2 RDSON
            3. 8.2.1.2.2.3 Gate Drive
            4. 8.2.1.2.2.4 Gate Charge
            5. 8.2.1.2.2.5 Rise and Fall Times
            6. 8.2.1.2.2.6 Gate Charge Ratio
            7. 8.2.1.2.2.7 Feedback Resistors
          3. 8.2.1.2.3 Efficiency Calculations
            1. 8.2.1.2.3.1 Quiescent Current
            2. 8.2.1.2.3.2 Conduction Loss
            3. 8.2.1.2.3.3 Switching Loss
            4. 8.2.1.2.3.4 Transitional Loss
            5. 8.2.1.2.3.5 DCR Loss
            6. 8.2.1.2.3.6 Efficiency
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Example Application 5 VIN to 1.8 VOUT
      3. 8.2.3 Example Application 5 VIN to 3.3 VOUT
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.2 Documentation Support

11.2.1 Related Documentation

For related documentation, see the following:

User's Guide, AN-1299 LM5041 Evaluation Board, SNVA074

11.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.4 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.5 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.