SNVS654J February   2010  – December 2015 LM25066

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Current Limit
      2. 8.3.2 Circuit Breaker
      3. 8.3.3 Power Limit
      4. 8.3.4 Undervoltage Lockout (UVLO)
      5. 8.3.5 Overvoltage Lockout (OVLO)
      6. 8.3.6 Power Good
      7. 8.3.7 VDD Sub-Regulator
      8. 8.3.8 Remote Temperature Sensing
      9. 8.3.9 Damaged MOSFET Detection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Up Sequence
      2. 8.4.2 Gate Control
      3. 8.4.3 Fault Timer and Restart
      4. 8.4.4 Shutdown Control
      5. 8.4.5 Enabling/Disabling and Resetting
    5. 8.5 Register Maps
      1. 8.5.1 PMBus Command Support
        1. 8.5.1.1 Standard PMBus™ Commands
          1. 8.5.1.1.1  OPERATION (01h)
          2. 8.5.1.1.2  CLEAR_FAULTS (03h)
          3. 8.5.1.1.3  CAPABILITY (19h)
          4. 8.5.1.1.4  VOUT_UV_WARN_LIMIT (43h)
          5. 8.5.1.1.5  OT_FAULT_LIMIT (4Fh)
          6. 8.5.1.1.6  OT_WARN_LIMIT (51h)
          7. 8.5.1.1.7  VIN_OV_WARN_LIMIT (57h)
          8. 8.5.1.1.8  VIN_UV_WARN_LIMIT (58h)
          9. 8.5.1.1.9  STATUS_BYTE (78h)
          10. 8.5.1.1.10 STATUS_WORD (79h)
          11. 8.5.1.1.11 STATUS_VOUT (7Ah)
          12. 8.5.1.1.12 STATUS_INPUT (7Ch)
          13. 8.5.1.1.13 STATUS_TEMPERATURE (7Dh)
          14. 8.5.1.1.14 STATUS_CML (7Eh)
          15. 8.5.1.1.15 STATUS_MFR_SPECIFIC (80h)
          16. 8.5.1.1.16 READ_VIN (88h)
          17. 8.5.1.1.17 READ_VOUT (8Bh)
          18. 8.5.1.1.18 READ_TEMPERATURE_1 (8Dh)
          19. 8.5.1.1.19 MFR_ID (99h)
          20. 8.5.1.1.20 MFR_MODEL (9Ah)
          21. 8.5.1.1.21 MFR_REVISION (9Bh)
        2. 8.5.1.2 Manufacturer Specific PMBus™ Commands
          1. 8.5.1.2.1  MFR_SPECIFIC_00: READ_VAUX (D0h)
          2. 8.5.1.2.2  MFR_SPECIFIC_01: MFR_READ_IIN (D1h)
          3. 8.5.1.2.3  MFR_SPECIFIC_02: MFR_READ_PIN (D2h)
          4. 8.5.1.2.4  MFR_SPECIFIC_03: MFR_IN_OC_WARN_LIMIT (D3h)
          5. 8.5.1.2.5  MFR_SPECIFIC_04: MFR_PIN_OP_WARN_LIMIT (D4h)
          6. 8.5.1.2.6  MFR_SPECIFIC_05: READ_PIN_PEAK (D5h)
          7. 8.5.1.2.7  MFR_SPECIFIC_06: CLEAR_PIN_PEAK (D6h)
          8. 8.5.1.2.8  MFR_SPECIFIC_07: GATE_MASK (D7h)
          9. 8.5.1.2.9  MFR_SPECIFIC_08: ALERT_MASK (D8h)
          10. 8.5.1.2.10 MFR_SPECIFIC_09: DEVICE_SETUP (D9h)
          11. 8.5.1.2.11 MFR_SPECIFIC_10: BLOCK_READ (DAh)
          12. 8.5.1.2.12 MFR_SPECIFIC_11: SAMPLES_FOR_AVG (DBh)
          13. 8.5.1.2.13 MFR_SPECIFIC_12: READ_AVG_VIN (DCh)
          14. 8.5.1.2.14 MFR_SPECIFIC_13: READ_AVG_VOUT (DDh)
          15. 8.5.1.2.15 MFR_SPECIFIC_14: READ_AVG_IIN (DEh)
          16. 8.5.1.2.16 MFR_SPECIFIC_15: READ_AVG_PIN (DFh)
          17. 8.5.1.2.17 MFR_SPECIFIC_16: BLACK_BOX_READ (E0h)
          18. 8.5.1.2.18 MFR_SPECIFIC_17: READ_DIAGNOSTIC_WORD (E1h)
          19. 8.5.1.2.19 MFR_SPECIFIC_18: AVG_BLOCK_READ (E2h)
        3. 8.5.1.3 Reading and Writing Telemetry Data and Warning Thresholds
        4. 8.5.1.4 Determining Telemetry Coefficients Empirically With Linear Fit
        5. 8.5.1.5 Writing Telemetry Data
        6. 8.5.1.6 PMBus™ Address Lines (ADR0, ADR1, ADR2)
        7. 8.5.1.7 SMBA Response
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 12-V, 45-A PMBus Hotswap Design
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1  Select RSNS and CL Setting
          2. 9.2.1.2.2  Selecting the Hotswap FETs
          3. 9.2.1.2.3  Select Power Limit
          4. 9.2.1.2.4  Set Fault Timer
          5. 9.2.1.2.5  Check MOSFET SOA
          6. 9.2.1.2.6  Switching to dV/dt based Start-up
          7. 9.2.1.2.7  Choosing the VOUT Slew Rate
          8. 9.2.1.2.8  Select Power Limit and Fault Timer
          9. 9.2.1.2.9  Set Undervoltage and Overvoltage Threshold
            1. 9.2.1.2.9.1 Option A
            2. 9.2.1.2.9.2 Option B
            3. 9.2.1.2.9.3 Option C
            4. 9.2.1.2.9.4 Option D
          10. 9.2.1.2.10 Power Good Pin
          11. 9.2.1.2.11 Input and Output Protection
          12. 9.2.1.2.12 Final Schematic and Component Values
      2. 9.2.2 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

12 Device and Documentation Support

12.1 Device Support

12.1.1 Development Support

For the LM25066 Design Calculator, go to http://www.ti.com/product/LM25066/toolssoftware.

12.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

12.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

12.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.