SNVS509F April   2007  – November 2023 LM25116

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 High-Voltage Start-Up Regulator
      2. 6.3.2 Enable
      3. 6.3.3 UVLO
      4. 6.3.4 Oscillator and Sync Capability
      5. 6.3.5 Error Amplifier and PWM Comparator
      6. 6.3.6 Ramp Generator
      7. 6.3.7 Current Limit
      8. 6.3.8 HO Output
      9. 6.3.9 Thermal Protection
    4. 6.4 Device Functional Modes
      1. 6.4.1 Soft Start and Diode Emulation
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1  Timing Resistor
        2. 7.2.2.2  Output Inductor
        3. 7.2.2.3  Current Sense Resistor
        4. 7.2.2.4  Ramp Capacitor
        5. 7.2.2.5  Output Capacitors
        6. 7.2.2.6  Input Capacitors
        7. 7.2.2.7  VCC Capacitor
        8. 7.2.2.8  Bootstrap Capacitor
        9. 7.2.2.9  Soft Start Capacitor
        10. 7.2.2.10 Output Voltage Divider
        11. 7.2.2.11 UVLO Divider
        12. 7.2.2.12 MOSFETs
        13. 7.2.2.13 MOSFET Snubber
        14. 7.2.2.14 Error Amplifier Compensation
        15. 7.2.2.15 Comprehensive Equations
          1. 7.2.2.15.1 Current Sense Resistor and Ramp Capacitor
          2. 7.2.2.15.2 Modulator Transfer Function
          3. 7.2.2.15.3 Error Amplifier Transfer Function
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.2.2.8 Bootstrap Capacitor

The bootstrap capacitor (CHB) between the HB and SW pins supplies the gate current to charge the high-side MOSFET gate at the turnon of each cycle as well as supplying the recovery charge for the bootstrap diode (D1). These current peaks can be several amperes. The recommended value of the bootstrap capacitor is at least
0.1 µF, and must be a good quality, low ESR, ceramic capacitor placed at the pins of the IC to minimize potentially damaging voltage transients caused by trace inductance. The absolute minimum value for the bootstrap capacitor is calculated as:

Equation 21. GUID-B346A06C-4CFB-468D-963F-6F10B947F1F4-low.gif

where

  • Qg is the high-side MOSFET gate charge
  • ΔVHB is the tolerable voltage droop on CHB

ΔVHB is typically less than 5% of VCC. A value of 1 µF was selected for this design.