SNVS033D May 2004 – November 2015 LM2621
PRODUCTION DATA.
NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.
The LM2621 is primarily used as a Boost type step-up converter. The following section provides information regarding connection and component choices to build a successful boost converter. Examples of typical applications are also provided including a SEPIC step-up/step-down topology. More details on designing a SEPIC converter can be found here: SLYT309.
In order to successfully build an application, the designer should have the following parameters:
The output voltage of the step-up regulator can be set between 1.24 V and 14 V by connecting a feedback resistive divider made of RF1 and RF2. The resistor values are selected as follows:
A value of 150 kΩ is suggested for RF1. Then, RF2 can be selected using the above equation. A 39-pF capacitor (CF1) connected across RF1 helps in feeding back most of the AC ripple at VOUT to the FB pin. This helps reduce the peak-to-peak output voltage ripple as well as improve the efficiency of the step-up regulator, because a set hysteresis of 30 mV at the FB pin is used for the gated oscillator control scheme.
When the output voltage (VOUT) is between 2.5 V and 5.0 V a bootstrapped operation is suggested. This is achieved by connecting the VDD pin (Pin 6) to VOUT. However if the VOUT is outside this range, the VDD pin should be connected to a voltage source whose range is between 2.5 V and 5 V. This can be the input voltage (VIN), VOUT stepped down using a linear regulator, or a different voltage source available in the system. This is referred to as non-bootstrapped operation. The maximum acceptable voltage at the BOOT pin (Pin 7) is 10 V.
The switching frequency of the oscillator is selected by choosing an external resistor (RFQ) connected between FREQ and VDD pins. See Figure 9 for choosing the RFQ value to achieve the desired switching frequency. A high switching frequency allows the use of very small surface mount inductors and capacitors and results in a very small solution size. A switching frequency between 300 kHz and 2 MHz is recommended.
The LM2621's high switching frequency enables the use of a small surface mount inductor. A 6.8-µH shielded inductor is suggested. The inductor should have a saturation current rating higher than the peak current it will experience during circuit operation (see Figure 10). Less than 100-mΩ ESR is suggested for high efficiency.
Open-core inductors cause flux linkage with circuit components and interfere with the normal operation of the circuit. They should be avoided. For high efficiency, choose an inductor with a high frequency core material, such as ferrite, to reduce the core losses. To minimize radiated noise, use a toroid, pot core or shielded core inductor. The inductor should be connected to the SW pin as close to the IC as possible. See Table 1 for a list of the inductor manufacturers.
A Schottky diode should be used for the output diode. The forward current rating of the diode should be higher than the load current, and the reverse voltage rating must be higher than the output voltage. Do not use ordinary rectifier diodes, since slow switching speeds and long recovery times cause the efficiency and the load regulation to suffer. Table 1 shows a list of the diode manufacturers.
Tantalum chip capacitors are recommended for the input and output filter capacitors. A 22-µF capacitor is suggested for the input filter capacitor. It should have a DC working voltage rating higher than the maximum input voltage. A 68-µF tantalum capacitor is suggested for the output capacitor. The DC working voltage rating should be greater than the output voltage. Very high ESR values (> 3Ω) should be avoided.
Design requirement is the same to the typical application shown earlier. Components have been chosen that comply with the required maximum height. See Design Requirements for the design requirement and following sections for the detailed design procedure.
Follow the detailed design procedure in Detailed Design Procedure.
Manufacturer | Part Number | |
---|---|---|
U1 | TI | LM2621MM |
C1 | Vishay/Sprague | 595D226X06R3B2T, Tantalum |
C2 | Vishay/Sprague | 595D686X0010C2T, Tantalum |
D1 | Motorola | MBRS140T3 |
L | Coilcraft | DT1608C-682 |
Design requirement is the same to the typical application shown earlier. Components have been chosen that comply with the required maximum height. See Design Requirements for the design requirement and following sections for the detailed design procedure.
Follow the detailed design procedure in Detailed Design Procedure.
Manufacturer | Part Number | |
---|---|---|
U1 | TI | LM2621MM |
C1 | Vishay/Sprague | 592D156X06R3B2T, Tantalum |
C2 | Vishay/Sprague | 592D336X06R3C2T, Tantalum |
D1 | Motorola | MBRS140T3 |
L | Vishay/Dale | ILS-3825-03 |
Design requirement for the SEPIC is similar to that of a boost but the current flowing through the switch is the addition of the current flowing through L1 and L2. As a result, the peak current through the main switch is IIN+IOUT+0.5xDeltaIL1+0.5xDeltaIL2. See SLYT309 for detail on the specific design requirement of a SEPIC converter.
Follow the detailed design procedure in Detailed Design Procedure.
Manufacturer | Part Number | Description | |
---|---|---|---|
U1 | TI | LM2621MM | Low Input Voltage Regulator |
C1 | Sanyo | 10CV220AX, SMT AL-Electrolytic | 220 µF |
C2 | TDK | C2012X7R1C225M, MLCC | 2.2 µF |
C3 | Vishay | VJ0603A331KXXAT | 33 pF |
C4 | TDK | C3225X7R0J107MT | 100 µF |
C5, C6 | Vishay | VJ0603Y104KXXAT | 0.1 µF |
D1 | Philips | BAT54C | VR = 1V |
D2 | Vishay | MBRS120 | 1A / VR = 20V |
L1, L2 | Coilcraft | DO1813P-682HC | 6.8 µH |
R1 | Vishay | CRCW08054990FRT6 | 499 Ω |
R2 | Vishay | CRCW08051503FRT6 | 150 kΩ |
R3 | Vishay | CRCW08053923FRT6 | 392 kΩ |
R4 | Vishay | CRCW08059092FRT6 | 90.9 kΩ |