SNVSB35C May 2018 – November 2024 LM26420-Q1
PRODUCTION DATA
The LM26420-Q1 contains a high-side NMOS FET and a low-side NMOS FET for each channel. The drain nodes of the high-side NMOS FET, the supply for the gate drivers and the supply for control circuitry for each channel are connected to VIND1 and VIND2, respectively.