SNVS793D November   2011  – May 2015 LM3269

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 System Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Dynamically Adjustable Output Voltage
      2. 7.3.2 Seamless Buck Transition
      3. 7.3.3 Thermal Overload Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable And Shutdown Mode
      2. 7.4.2 VCON,ON
      3. 7.4.3 Pulse Frequency Modulation (PFM) Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Setting The Output Voltage
      2. 8.1.2 Output Current Capacity
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Recommended External Components
          1. 8.2.2.1.1 Inductor Selection
          2. 8.2.2.1.2 Input Capacitor Selection
          3. 8.2.2.1.3 Output Capacitor Selection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Overview
        1. 10.1.1.1 PCB
          1. 10.1.1.1.1 Energy Efficiency
          2. 10.1.1.1.2 EMI
        2. 10.1.1.2 Manufacturing Considerations
        3. 10.1.1.3 LM3269 RF Evaluation Board
        4. 10.1.1.4 Component Placement
        5. 10.1.1.5 PCB Considerations By Layer
          1. 10.1.1.5.1 VBATT
    2. 10.2 Layout Examples
    3. 10.3 DSBGA Package Assembly And Use
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
PVIN, VOUT to GND −0.2 6 V
EN, VCON to SGND, PGND −0.2 PVIN + 0.2 V or 6 V(4) V
FB to PGND −0.2 VOUT + 0.2 V or 6 V(4) V
SW1, SW2 −0.2 PVIN + 0.2 V or 6 V(4) V
Continuous power dissipation(3) Internally limited
Junction temperature, TJ-MAX 150 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.
(3) Internal thermal circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150°C (typical) and disengages at TJ = 125°C (typical).
(4) Whichever is smaller.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN NOM MAX UNIT
Input voltage 2.7 5.5 V
Output voltage 0.6 4.2 V
Recommended load current 0 750 mA
Junction temperature (TJ) −30 125 °C
Ambient temperature (TA)(3) −30 85 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to the potential at the GND pins.
(3) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be de-rated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).

6.4 Thermal Information

THERMAL METRIC(1) LM3269 UNIT
YZR (DSBGA)
12 PINS
RθJA Junction-to-ambient thermal resistance(2) 85 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power dissipation exists, special care must be paid to thermal dissipation issues in board design. Junction-to-ambient thermal resistance (RθJA) is taken from a thermal modeling result, performed under the conditions and guidelines set forth in the JEDEC standard JESD51-7.

6.5 Electrical Characteristics

Unless otherwise specified, typical (TYP) limits are for TA = TJ = 25°C, and minimum (MIN) and maximum (MAX) limits apply over the full operating ambient temperature range (−30°C ≤ TJ = TA ≤ +85°C). Unless otherwise noted, specifications apply to the Figure 16 with: PVIN = EN = 3.6V.(1)(2)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VFB, min Min FB voltage VCON = 0.2 V 0.53 0.60 0.67 V
VFB, max Max FB voltage VCON = 1.4 V 4.13 4.2 4.27
IQ_PWM Quiescent current No switching(3) 0.9 1.2 mA
ISHDN Shutdown supply current EN = 0 V, VCON = 0 V,
SW1 = SW2 = VOUT = 0 V		 0.02 5 µA
ILIM_L Input current limit (large) Open loop(4)
VCON = 1.2 V		 1500 1700 1900 mA
ILIM_S Input current limit (small) Open loop(4)
VCON = 0.2 V		 750 850
Gain Internal gain(5) 0.2 V ≤ VCON ≤ 1.4 V 3 V/V
IEN EN pin pulldown current 5 10 µA
IVCON VCON pin leakage current –1 1
VIH Logic high input threshold for EN 1.2 V
VIL Logic low input threshold for EN 0.6
IOUT_LEAKAGE Leakage into VOUT pin of buck-boost EN = 0 V, VOUT ≤ 4.2 V
PVIN ≤ 5.5 V		 5 µA
(1) All voltages are with respect to the potential at the GND pins.
(2) Min and Max limits are specified by design, test, or statistical analysis. Typical numbers are not verified, but do represent the most likely norm.
(3) IQ specified here is when the part is not switching.
(4) The parameters in the electrical characteristics table are tested under open loop conditions at PVIN = 3.6 V.
(5) To calculate VOUT, use the following equation: VOUT = VCON × 3.

6.6 System Characteristics

The following spec table entries are specified by design and verification provided the component values in the typical application circuit are used (L = 2.2 µH, DCR = 110 mΩ, MIPSZ2520D2R2/FDK; CIN = 10 µF, 6.3 V, C1608X5R0J106K/TDK (0603); COUT = 4.7 µF, 6.3 V, C1608X5R0J475M/TDK (0603). These parameters are not verified by production testing. Typical (TYP) limits are for TA = TJ = 25°C; minimum (MIN) and maximum (MAX) limits apply over the full operating ambient temperature range (−30°C ≤ TJ = TA ≤ 85°C) and over the VBATT = PVIN = 2.7 V to 5.5 V, unless otherwise specified.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IOUT_MAX Max output current VBATT ≥ 3 V, VOUT = 3.8 V 750 mA
VCON_LIN VCON linearity 0.2 V ≤ VCON ≤ 1.4 V –2.5% 2.5%
VO_RIPPLE Ripple voltage VBATT ≥ 3.2 V, 0.6 V ≤ VOUT ≤ 4.2 V,
0 mA ≤ IOUT ≤ 430 mA, TA = 25°C		 15 50 mV
PFM ripple VOUT = 0.6 V, IOUT = 5 mA 45
Ripple voltage in mode transition VBATT = 3 V to 5 V,
TR = TF = 30 µs
3.3 V ≤ VOUT ≤ 4.2 V		 50
ΔVOUT Line regulation VBATT = 2.7 V to 4.7 V, VOUT = 3.8 V,
IOUT = 500 mA		 10 mV
Load regulation IOUT = 0 mA to 500 mA, VBATT = 2.7 V to 4.7 V 20
VOUT_TR VOUT rise time VBATT = 3.2 V to 4.7 V,
VOUT = 1.4 V to 3 V, 0.1 µs < Tr_VCON < 1 µs
RLOAD = 11.4 Ω		 10 µs
η Efficiency VBATT = 3.7 V, VOUT = 0.6 V, IOUT = 10 mA
−30°C ≤ TJ = TA ≤ 85°C		 61%
VBATT = 3.7 V, VOUT = 1 V IOUT = 20 mA
−30°C ≤ TJ = TA ≤ 85°C		 78%
VBATT = 3.7 V, VOUT = 1.4 V IOUT = 50 mA
−30°C ≤ TJ = TA ≤ 85°C		 85%
VBATT = 3.7 V, VOUT = 2.7 V IOUT = 200 mA
−30°C ≤ TJ = TA ≤ 85°C		 95%
VBATT = 3.7 V, VOUT = 3.3 V, IOUT = 480 mA
−30°C ≤ TJ = TA ≤ 85°C		 94%
VBATT = 3 V, VOUT = 3.6 V, IOUT = 200 mA
−30°C ≤ TJ = TA ≤ 85°C		 95%

6.7 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TON Turnon time (time for output to reach 0V→90% × 3.5 V) EN = L to H, VBATT = 3.7 V, VOUT = 3.5 V,
IOUT = 0 mA
−30°C ≤ TJ = TA ≤ 85°C		 35 50 µs
FOSC_PFM PFM operating frequency VBATT = 3.7 V, VOUT = 0.6 V, IOUT = 13 mA 63 kHz
FOSC_PWM Internal oscillator frequency PWM 2.1 2.4 2.7 MHz
DMAX Maximum duty cycle Boost 50%
Buck 100%
VOUT_TR VCON change to 90% VBATT = 3.2 V to 4.7 V,
VOUT = 1.4 V to 3 V, 0.1 µs < Tr_VCON < 1 µs
RLOAD = 11.4 Ω		 10 µs

6.8 Typical Characteristics

(PVIN = EN = 3.6 V and TA = 25°C, unless otherwise noted)
LM3269 30173219.png
VCON = VOUT = SW1 = SW2 = EN = 0 V
Figure 1. Shutdown Current vs. Temperature
LM3269 30173216.png
VOUT = 3.5 V IOUT = 300 mA
Figure 2. Switching Frequency vs. Temperature
LM3269 30173227.png
Figure 3. VCON Voltage vs. Output Voltage (No Load)
LM3269 30173221.gif
VOUT = 1 V
Figure 5. PFM Efficiency
LM3269 30173225.gif
VOUT = 2.4 V
Figure 7. PWM Efficiency
LM3269 30173220.gif
VOUT = 0.6 V
Figure 4. PFM Efficiency
LM3269 30173222.gif
VOUT = 1.4 V
Figure 6. PFM Efficiency
LM3269 30173226.gif
VOUT = 3.6 V
Figure 8. PWM Efficiency