SNVS616 Data sheet

SNVS616H April 2009 – July 2015 LM3429 , LM3429-Q1

PRODUCTION DATA.

Package Options

Mechanical Data (Package|Pins)

PWP|14
- MPDS370A

Thermal pad, mechanical data (Package|Pins)

PWP|14
- PPTD287A

Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
Voltage	V_IN, nDIM	–0.3	76	V
	OVP, HSP, HSN	–0.3	76
	RCT	–0.3	3
	IS	–0.3	76
	IS		–2 for 100 ns
	V_CC	–0.3	8
	COMP, CSH	–0.3	6
	GATE	–0.3	V_CC
	GATE	–2.5 for 100 ns	V_CC+2.5 for 100 ns
	PGND	–0.3	0.3
	PGND	–2.5	2.5 for 100 ns
Continuous Current	V_IN, nDIM		–1	mA
	OVP, HSP, HSN		–100	µA
	RCT	–1	5	mA
	IS		–1	mA
	COMP, CSH	–200	200	µA
	GATE	–1	1	mA
Maximum Junction Temperature		Internally Limited
Maximum Lead Temperature (Reflow and Solder) ⁽³⁾			260	°C
Continuous Power Dissipation		Internally Limited
Storage Temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/Distributors for availability and specifications.

(3) Refer to http://www.ti.com/packaging for more detailed information and mounting techniques.

6.2 ESD Ratings

			VALUE	UNIT
LM3429 IN PWP PACKAGE
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	±1000	V
LM3429-Q1 IN PWP PACKAGE
V_(ESD)	Electrostatic discharge	Human body model (HBM), per AEC Q100-002⁽³⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per AEC Q100-011	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

(3) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

	MIN	MAX	UNIT
Operating Junction Temperature Range	–40	125	°C
Input Voltage V_IN	4.5	75	V

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LM3429-Q1	LM3429	UNIT
		PWP (HTSSOP)	PWP (HTSSOP)
		14 PINS	14 PINS
R_θJA	Junction-to-ambient thermal resistance	47.8	47.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	26.5	26.5	°C/W
R_θJB	Junction-to-board thermal resistance	22.3	22.3	°C/W
ψ_JT	Junction-to-top characterization parameter	0.7	0.7	°C/W
ψ_JB	Junction-to-board characterization parameter	22.1	22.1	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	3.3	3.3	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

MIN and MAX limits apply T_J = (−40°C to 125°C) unless specified otherwise. Unless otherwise stated the following condition applies: V_IN = 14 V.

PARAMETER		TEST CONDITIONS	MIN⁽¹⁾	TYP⁽²⁾	MAX⁽¹⁾	UNIT
STARTUP REGULATOR (V_CC)
V_CC-REG	V_CC Regulation	I_CC = 0 mA	6.3	6.9	7.35	V
I_CC-LIM	V_CC Current Limit	V_CC = 0V	20	27		mA
I_Q	Quiescent Current	Static		1.6	3	mA
V_CC-UVLO	V_CC UVLO Threshold	V_CC Increasing		4.17	4.5	V
V_CC-UVLO	V_CC UVLO Threshold	V_CC Decreasing	3.7	4.08
V_CC-HYS	V_CC UVLO Hysteresis			0.1
OVERVOLTAGE PROTECTION (OVP)
V_TH-OVP	OVP OVLO Threshold	OVP Increasing	1.18	1.24	1.28	V
I_HYS-OVP	OVP Hysteresis Source Current	OVP Active (high)	10	20	30	µA
ERROR AMPLIFIER
V_CSH	CSH Reference Voltage	With Respect to AGND	1.21	1.235	1.26	V
	Error Amplifier Input Bias Current	MIN, MAX: T_J = 25°C	–0.6	0	0.6	µA
	COMP Sink / Source Current		10	26	40	µA
	Transconductance			100		µA/V
	Linear Input Range	⁽³⁾		±125		mV
	Transconductance Bandwidth	-6dB Unloaded Response⁽³⁾, MIN: T_J = 25°C	0.5	1		MHz
OFF TIMER (RCT)
t_OFF-MIN	Minimum Off-time	RCT = 1V through 1 kΩ		35	75	ns
R_RCT	RCT Reset Pulldown Resistance			36	120	Ω
V_RCT	V_IN/25 Reference Voltage	V_IN = 14V	540	565	585	mV
PWM COMPARATOR
	COMP to PWM Offset		700	800	900	mV
CURRENT LIMIT (IS)
V_LIM	Current Limit Threshold		215	245	275	mV
	V_LIM Delay to Output			35	75	ns
t_ON-MIN	Leading Edge Blanking Time		75	250	450	ns
HIGH SIDE TRANSCONDUCTANCE AMPLIFIER
	Input Bias Current			10		µA
	Transconductance		20	119		mA/V
	Input Offset Current		–1.5	0	1.5	µA
	Input Offset Voltage		–7	0	7	mV
	Transconductance Bandwidth	I_CSH = 100 µA⁽³⁾, MIN: T_J = 25°C	250	500		kHz
GATE DRIVER (GATE)
R_SRC(GATE)	GATE Sourcing Resistance	GATE = High		2	6	Ω
R_SNK(GATE)	GATE Sinking Resistance	GATE = Low		1.3	4.5	Ω
UNDERVOLTAGE LOCKOUT and DIM INPUT (nDIM)
V_TH-nDIM	nDIM / UVLO Threshold		1.18	1.24	1.28	V
I_HYS-nDIM	nDIM Hysteresis Current		10	20	30	µA
THERMAL SHUTDOWN
T_SD	Thermal Shutdown Threshold	⁽³⁾		165		°C
T_HYS	Thermal Shutdown Hysteresis	⁽³⁾		25		°C

(1) All limits specified at room temperature (TYP) and at temperature extremes (MIN/MAX). All room temperature limits are 100% production tested. All limits at temperature extremes are specified through correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL).

(2) Typical numbers are at 25°C and represent the most likely norm.

(3) These electrical parameters are specified by design, and are not verified by test.

6.6 Typical Characteristics

T_A= 25°C and V_IN = 14 V unless otherwise specified. The measurements for Figure 1 and Figure 3 were made using the standard boost evaluation board from AN-1986 (SNVA404). The measurements for Figure 2, Figure 4, and Figure 5, Figure 6 were made using the standard buck-boost evaluation board from AN-1985 (SNVA403).