10.1.1 Boost Output Capacitor Placement

Because the output capacitor is in the path of the inductor current discharge path it detects a high-current step from 0 to I_PEAK each time the switch turns off and the Schottky diode turns on. Any inductance along this series path from the cathode of the diode through C_OUT and back into the GND pin of the LM36922H device GND pin contributes to voltage spikes (V_SPIKE = L_{P_} × di/dt) at SW and OUT. These spikes can potentially over-voltage the SW pin, or feed through to GND. To avoid this, COUT+ must be connected as close to the cathode of the Schottky diode as possible, and COUT− must be connected as close to the GND pin of the device as possible. The best placement for COUT is on the same layer as the LM36922H in order to avoid any vias that can add excessive series inductance.

10.1.2 Schottky Diode Placement

In the boost circuit of the LM36922H device the Schottky diode is in the path of the inductor current discharge. As a result the Schottky diode sees a high-current step from 0 to I_PEAK each time the switch turns off and the diode turns on. Any inductance in series with the diode causes a voltage spike (V_SPIKE = L_{P_} × di/dt) at SW and OUT. This can potentially over-voltage the SW pin, or feed through to V_OUT and through the output capacitor and into GND. Connecting the anode of the diode as close to the SW pin as possibleand the cathode of the diode as close to C_OUT as possible reduces the inductance (L_{P_}) and minimize these voltage spikes.

10.1.3 Inductor Placement

The node where the inductor connects to the LM36922H device SW pin has 2 issues. First, a large switched voltage (0 to V_OUT + V_{F_SCHOTTKY}) appears on this node every switching cycle. This switched voltage can be capacitively coupled into nearby nodes. Second, there is a relatively large current (input current) on the traces connecting the input supply to the inductor and connecting the inductor to the SW bump. Any resistance in this path can cause voltage drops that can negatively affect efficiency and reduce the input operating voltage range.

To reduce the capacitive coupling of the signal on SW into nearby traces, the SW bump-to-inductor connection must be minimized in area. This limits the PCB capacitance from SW to other traces. Additionally, high impedance nodes that are more susceptible to electric field coupling must be routed away from SW and not directly adjacent or beneath. This is especially true for traces such as SCL, SDA, HWEN, ASEL, and PWM. A GND plane placed directly below SW dramatically reduces the capacitance from SW into nearby traces.

Lastly, limit the trace resistance of the V_IN to inductor connection and from the inductor to SW connection by use of short, wide traces.

10.1.4 Boost Input Capacitor Placement

For the LM36922H boost converter, the input capacitor filters the inductor current ripple and the internal MOSFET driver currents during turnon of the internal power switch. The driver current requirement can range from 50 mA at 2.7 V to over 200 mA at 5.5 V with fast durations of approximately 10 ns to 20 ns. This appears as high di/dt current pulses coming from the input capacitor each time the switch turns on. Close placement of the input capacitor to the IN pin and to the GND pin is critical because any series inductance between IN and CIN+ or CIN− and GND can create voltage spikes that could appear on the VIN supply line and in the GND plane. Close placement of the input bypass capacitor at the input side of the inductor is also critical. The source impedance (inductance and resistance) from the input supply, along with the input capacitor of the LM36922H , form a series RLC circuit. If the output resistance from the source (R_S) is low enough the circuit is underdamped and has a resonant frequency (typically the case). Depending on the size of L_S the resonant frequency could occur below, close to, or above the LM36922H switching frequency. This can cause the supply current ripple to be:

1. Approximately equal to the inductor current ripple when the resonant frequency occurs well above the LM36922H switching frequency;
2. Greater than the inductor current ripple when the resonant frequency occurs near the switching frequency; or
3. Less than the inductor current ripple when the resonant frequency occurs well below the switching frequency.

Figure 52 shows the series RLC circuit formed from the output impedance of the supply and the input capacitor. The circuit is redrawn for the AC case where the V_IN supply is replaced with a short to GND, and the LM36922H + Inductor is replaced with a current source (ΔI_L). Equation 1 is the criteria for an underdamped response. Equation 2 is the resonant frequency. Equation 3 is the approximated supply current ripple as a function of L_S, R_S, and C_IN. As an example, consider a 3.6-V supply with 0.1 Ω of series resistance connected to C_IN through 50 nH of connecting traces. This results in an underdamped input-filter circuit with a resonant frequency of 712 kHz. Because both the 1-MHz and 500-kHz switching frequency options lie close to the resonant frequency of the input filter, the supply current ripple is probably larger than the inductor current ripple. In this case, using equation 3, the supply current ripple can be approximated as 1.68 times the inductor current ripple (using a 500-kHz switching frequency) and 0.86 times the inductor current ripple using a 1-MHz switching frequency. Increasing the series inductance (LS) to 500 nH causes the resonant frequency to move to around 225 kHz, and the supply current ripple to be approximately 0.25 times the inductor current ripple (500-kHz switching frequency) and 0.053 times for a 1-MHz switching frequency.