SNOSBJ6G October   1999  – October 2018 LM193-N , LM2903-N , LM293-N , LM393-N

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: LM193A V+= 5 V, TA = 25°C
    6. 6.6  Electrical Characteristics: LM193A (V+ = 5 V)
    7. 6.7  Electrical Characteristics: LMx93 and LM2903 V+= 5 V, TA = 25°C
    8. 6.8  Electrical Characteristics: LMx93 and LM2903 (V+ = 5 V)
    9. 6.9  Typical Characteristics: LMx93 and LM193A
    10. 6.10 Typical Characteristics: LM2903
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Basic Comparator
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 System Examples
        1. 8.2.2.1 Split-Supply Application
        2. 8.2.2.2 V+ = 5.0 VDC Application Circuits
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Links
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

11.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.