SNVSCB3 October 2022 LM5013
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
IQ-SHUTDOWN | VIN shutdown current | VEN/UVLO = 0V | 3.1 | 9.9 | µA | |
IQ-SLEEP | VIN sleep current | VEN = 2.5 V, VFB = 1.5 V, VBST –VSW = 5 V, non-switching | 10 | 20 | µA | |
IQ-STANDBY | VIN standby current | VEN = 1.2 V | 25 | 40 | µA | |
IQ-ACTIVE | VIN Active current | VEN = 2.5 V | 450 | µA | ||
EN/UVLO | ||||||
VSD-RISING | Shutdown threshold | 1.1 | V | |||
VSD-FALLING | Shutdown threshold | 0.45 | V | |||
VEN-RISING | EN threshold rising | 1.43 | 1.5 | 1.6 | V | |
VEN-FALLING | EN threshold falling | 1.35 | 1.4 | 1.47 | V | |
FEEDBACK VOLTAGE | ||||||
VREF | FB regulation voltage | 1.181 | 1.2 | 1.218 | V | |
TIMING | ||||||
tON1 | On-time1 | VVIN = 12 V, RRON = 75 kΩ | 2550 | ns | ||
tON2 | On-time2 | VVIN = 12 V, RRON = 25 kΩ | 830 | ns | ||
tON3 | On-time3 | VVIN = 48 V, RRON = 75 kΩ | 625 | ns | ||
tON4 | On-time4 | VVIN = 48 V, RRON = 25 kΩ | 245 | ns | ||
tON5 | On-time5 | VVIN = 100 V, RRON = 75 kΩ | 330 | ns | ||
tON6 | On-time6 | VVIN = 100 V, RRON = 25 kΩ | 128 | ns | ||
PGOOD | ||||||
VPG-UTH | FB upper threshold for PGOOD low to high | VFB rising | 1.1 | 1.14 | 1.2 | V |
VPG-LTH | FB lower threshold for PGOOD high to low | VFB falling | 1.05 | 1.08 | 1.12 | V |
VPG-HYS | PGOOD upper and lower threshold hysteresis | VFB falling | 60 | mV | ||
RPG | PGOOD pulldown resistance | VFB = 1 V | 8 | Ω | ||
BOOTSTRAP | ||||||
VBST-UV | Gate drive UVLO | VBST falling | 2.4 | 3.4 | V | |
POWER SWITCH | ||||||
RDSON-HS | High-side MOSFET RDSON | ISW = –100 mA | 0.25 | Ω | ||
SOFT START | ||||||
tSS | Internal soft-start | 1.75 | 3.5 | 4.75 | ms | |
CURRENT LIMIT | ||||||
IPEAK | Peak current limit threshold | 3.7 | 4.2 | 5 | A | |
THERMAL SHUTDOWN | ||||||
TJ-SD | Thermal shutdown threshold (1) | Temperature rising | 175 | °C | ||
TJ-HYS | Thermal shutdown hysteresis (1) | 10 | °C |