SNVSB14C April   2018  – October 2021 LM5036

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  High-Voltage Start-Up Regulator
      2. 7.3.2  Undervoltage Lockout (UVLO)
      3. 7.3.3  Reference Regulator
      4. 7.3.4  Oscillator, Synchronized Input
      5. 7.3.5  Voltage-Mode Control
      6. 7.3.6  Primary-Side Gate Driver Outputs (LSG and HSG)
      7. 7.3.7  Half-Bridge PWM Scheme
      8. 7.3.8  Maximum Duty Cycle Operation
      9. 7.3.9  Pre-Biased Start-Up Process
        1. 7.3.9.1 Primary FETs Soft-Start Process
        2. 7.3.9.2 Synchronous Rectifier (SR) Soft-Start Process
      10. 7.3.10 Zero Duty Cycle Operation
      11. 7.3.11 Enhanced Cycle-by-Cycle Current Limiting with Pulse Matching
      12. 7.3.12 Reverse Current Protection
      13. 7.3.13 CBC Threshold Accuracy
      14. 7.3.14 Hiccup Mode Protection
      15. 7.3.15 Hiccup Mode Blanking
      16. 7.3.16 Over-Temperature Protection (OTP)
      17. 7.3.17 Over-Voltage / Latch (ON_OFF Pin)
      18. 7.3.18 Auxiliary Constant On-Time Control
      19. 7.3.19 Auxiliary On-Time Generator
      20. 7.3.20 Auxiliary Supply Current Limiting
      21. 7.3.21 Auxiliary Primary Output Capacitor Ripple
      22. 7.3.22 Auxiliary Ripple Configuration and Control
      23. 7.3.23 Asynchronous Mode Operation of Auxiliary Supply
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Custom Design With WEBENCH® Tools
        2. 8.2.2.2  Input Transient Protection
        3. 8.2.2.3  Level-Shift Detection Circuit
        4. 8.2.2.4  Applications with VIN > 100-V
        5. 8.2.2.5  Applications without Pre-Biased Start-Up Requirement
        6. 8.2.2.6  UVLO Voltage Divider Selection
        7. 8.2.2.7  Over Voltage, Latch (ON_OFF Pin) Voltage Divider Selection
        8. 8.2.2.8  SS Capacitor
        9. 8.2.2.9  SSSR Capacitor
        10. 8.2.2.10 Half-Bridge Power Stage Design
        11. 8.2.2.11 Current Limit
        12. 8.2.2.12 Auxiliary Transformer
        13. 8.2.2.13 Auxiliary Feedback Resistors
        14. 8.2.2.14 RON Resistor
        15. 8.2.2.15 VIN Pin Capacitor
        16. 8.2.2.16 Auxiliary Primary Output Capacitor
        17. 8.2.2.17 Auxiliary Secondary Output Capacitor
        18. 8.2.2.18 Auxiliary Feedback Ripple Circuit
        19. 8.2.2.19 Auxiliary Secondary Diode
        20. 8.2.2.20 VCC Diode
        21. 8.2.2.21 Opto-Coupler Interface
        22. 8.2.2.22 Full-Bridge Converter Applications
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Custom Design With WEBENCH® Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
        1. 11.2.1.1 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Half-Bridge PWM Scheme

Synchronous rectification on the secondary side of the transformer provides higher efficiency, especially for low output voltage and high output current converter, compared to the diode rectification. The reduction of the diode forward voltage drop (0.5-V to 1.5-V) to 10-mV to 200-mV VDS voltage for a MOSFET significantly reduces rectification losses. In a typical application, the secondary windings of the transformer can be center tapped, with the output power inductor in series with the center tap, as shown in Figure 7-5. The synchronous rectifiers (SRs) provide the ground path for the energized secondary winding and the inductor current.

GUID-5A7E6BE9-559B-4F3E-9B12-70A532181346-low.gifFigure 7-5 Half-bridge Topology with Center-Tap Rectification

The internal SR drivers are powered by the REF regulator and each SR output is capable of sourcing 0.1-A and sinking 0.2-A peak (typical). The amplitude of the SR drivers is limited to 5-V. The 5-V SR signals enable the transfer of SR control signals across the isolation barrier either through a digital isolator or isolated gate driver. It should be noted that the actual gate sourcing and sinking currents for the SRs are provided by the secondary-side gate drivers.

The timing diagram of the four PMW signals (LSG, HSG, SR1, and SR2) with dead-times is illustrated in Figure 7-6. The main clock is generated by the internal oscillator. A delayed clock is derived by adding a delay of tD to the main clock. tD can be calculated from Equation 3, where RD1 is the value of the resistor connected between RD1 pin and AGND.

Equation 3. GUID-9DB2B689-6401-4414-A577-6B320CC09919-low.gif
GUID-06247DC3-B51F-4C9E-AA79-A88CA6B7626B-low.gifFigure 7-6 PWM Signal Timing Diagram

As illustrated in Figure 7-6, the rising edge of the main clock is used to turn off the SRs. Primary FET drive signal LSG/HSG is turned on at the falling edge of the delayed clock. Therefore, the dead-time between the falling edge of SR and the rising edge of the respective primary FET can be calculated from Equation 4

Equation 4. GUID-5A4EBEDE-EC2A-41D9-92C9-851DE6646069-low.gif

where

  • tCLK is the pulse width of the clock which is 65 ns (typical).

The minimum achievable t1 is dominated by the pulse width of the clock when tD is set to minimum (30 ns).

After SR1 is turned off, the body diode of SR1 continues to carry about half the inductor current until the primary power raises the drain voltage of the SR1 and reverse biases its body diode. Ideally, dead-time t1 would be set to the minimum time that allows the SR to turn off before the body diode starts conducting.

Power is transferred from the primary to the secondary side when the LSG is turned on. During this power transfer period, the SR2 is still turned on while the SR1 is turned off. The drain voltage of SR1 is twice the voltage of the center tap at this time. Under the normal operation, the LSG is turned off either when the RAMP signal exceeds the COMP signal or at the rising edge of the next delayed clock signal (maximum duty cycle condition), whichever comes earlier. A dead-time t2 is inserted between the falling edge of LSG and rising edge of SR1. t2 can be calculated from Equation 5, where RD2 is the value of the resistor connected between RD2 pin and AGND.

Equation 5. GUID-14F44BD7-844A-4F25-9A8C-E67AE70A99FC-low.gif

During the dead-time t2, the inductor current continues to flow through the body diode of SR1. Because the body diode causes more conduction loss than the SR, efficiency can be improved by minimizing the t2 period while maintaining sufficient margin across the entire operating conditions (component tolerances, input voltages, etc.) to prevent the cross conduction between the primary FET and SR.

During the freewheeling period where both of the primary FETs are turned off while both of the SRs are turned on, the inductor current is almost equally shared between SR1 and SR2 which effectively shorts the secondary winding of the transformer. SR2 is then turned off before HSG is turned on. The power is transferred from the primary to secondary side again when HSG is turned on. After HSG is disabled and the dead-time t2 expires, SR1 and SR2 both conduct again during the freewheeling period.

Resistor values of no less than 5-kΩ should be connected between the RD1/RD2 pins and AGND