SNVSB14C April 2018 – October 2021 LM5036
PRODUCTION DATA
The LM5036 device provides two gate driver outputs for the primary FETs of the main half-bridge converter: one floating high-side gate driver output HSG and one ground referenced low-side gate driver output LSG. Each internal gate driver is capable of sourcing 1-A peak and sinking 2-A peak (typical). Initially, the LSG output is turned on during the power transfer phase, followed by a freewheeling period during which both LSG and HSG outputs are turned off. In the subsequent power transfer phase, the HSG output is turned on followed by another freewheeling period.
The low-side LSG gate driver is powered directly by the VCC bias supply. The HSG gate driver is powered from a bootstrap capacitor connected between BST and SW. An external diode connected between VCC and BST provides the high-side gate driver power by charging the bootstrap capacitor from VCC when the switching node SW is low. When the high side FET is turned on, BST rises to a peak voltage equal to VCC + VIN.
The BST and VCC capacitors should be placed close to the pins of the LM5036 device to minimize voltage transients due to parasitic inductance because the peak current source to the MOSFET gates can exceed 1 A (typical). The recommended value of the BST capacitor is 0.1-µF or greater. A low ESR/ESL capacitor, such as a surface mount ceramic, should be used to prevent voltage drop during the HSG transitions.