SNVS628H October   2009  – December 2019 LM5060

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Circuit
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Up Sequence
      2. 7.4.2 Status Conditions
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Gate Control
      2. 8.1.2  Fault Timer
      3. 8.1.3  VGS Considerations
      4. 8.1.4  VDS Fault Condition
      5. 8.1.5  Overcurrent Fault
      6. 8.1.6  Restart After Overcurrent Fault Event
      7. 8.1.7  Enable
      8. 8.1.8  UVLO
      9. 8.1.9  OVP
      10. 8.1.10 Restart After OVP Event
      11. 8.1.11 nPGD Pin
    2. 8.2 Typical Applications
      1. 8.2.1 Example Number 1: LM5060EVAL Design
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 VDS Fault Detection and Selecting Sense Pin Resistor RS
          2. 8.2.1.2.2 Turn-On Time
          3. 8.2.1.2.3 Fault Detection Delay Time
          4. 8.2.1.2.4 MOSFET Selection
          5. 8.2.1.2.5 Input and Output Capacitors
          6. 8.2.1.2.6 UVLO, OVP
          7. 8.2.1.2.7 POWER GOOD Indicator
          8. 8.2.1.2.8 Input Bypass Capacitor
          9. 8.2.1.2.9 Large Load Capacitance
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Example Number 2: Reverse Polarity Protection With Diodes
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Application Curve
      3. 8.2.3 Example Number 3: Reverse Polarity Protection With Resistor
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
          1. 8.2.3.2.1 Reverse Polarity Protection With a Resistor
          2. 8.2.3.2.2 Fault Detection With RS and RO
        3. 8.2.3.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.3.2.2 Fault Detection With RS and RO

Figure 41 shows an example circuit where the OUT pin is protected against a reverse battery situation with a current limiting resistor RO. When using resistor RO in the OUT pin path, the resistor RS has to be selected taking the RO resistor into account. The LM5060 monitors the VDS voltage of an external N-Channel MOSFET. The VDS fault detection voltage is the drain to source voltage threshold (VDSTH). The formula below calculates a proper RS resistor value for a desired VDSTH taking into account the voltage drop across the RO resistor.

Equation 20. LM5060 30104248.gif

VOFFSET is the offset voltage between the SENSE pin and the OUT pin, ISENSE is the threshold programming current, and IOUT-EN is the OUT pin bias current. When RS and RO have been selected, the following formula can be used for VDSTH min and max calculations:

Equation 21. LM5060 30104249.gif

The MOSFET drain-to-source current threshold is:

Equation 22. LM5060 30104250.gif

where

  • RDS(ON) is the on resistance of the pass element Q1 in Figure 20