SNVS628H October   2009  – December 2019 LM5060

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Circuit
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Up Sequence
      2. 7.4.2 Status Conditions
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Gate Control
      2. 8.1.2  Fault Timer
      3. 8.1.3  VGS Considerations
      4. 8.1.4  VDS Fault Condition
      5. 8.1.5  Overcurrent Fault
      6. 8.1.6  Restart After Overcurrent Fault Event
      7. 8.1.7  Enable
      8. 8.1.8  UVLO
      9. 8.1.9  OVP
      10. 8.1.10 Restart After OVP Event
      11. 8.1.11 nPGD Pin
    2. 8.2 Typical Applications
      1. 8.2.1 Example Number 1: LM5060EVAL Design
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 VDS Fault Detection and Selecting Sense Pin Resistor RS
          2. 8.2.1.2.2 Turn-On Time
          3. 8.2.1.2.3 Fault Detection Delay Time
          4. 8.2.1.2.4 MOSFET Selection
          5. 8.2.1.2.5 Input and Output Capacitors
          6. 8.2.1.2.6 UVLO, OVP
          7. 8.2.1.2.7 POWER GOOD Indicator
          8. 8.2.1.2.8 Input Bypass Capacitor
          9. 8.2.1.2.9 Large Load Capacitance
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Example Number 2: Reverse Polarity Protection With Diodes
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Application Curve
      3. 8.2.3 Example Number 3: Reverse Polarity Protection With Resistor
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
          1. 8.2.3.2.1 Reverse Polarity Protection With a Resistor
          2. 8.2.3.2.2 Fault Detection With RS and RO
        3. 8.2.3.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1.5 Overcurrent Fault

The VDS Fault Comparator can be used to implement an Over-Current shutdown function. The VDS Fault Comparator monitors the voltage difference between the SENSE pin and the OUT pin. This is, essentially, the same voltage that is across the N-Channel MOSFET RDS(ON) less the threshold voltage that is set by the series resistor on the SENSE pin. The value of capacitor on the TIMER pin, the capacitor charge current (ITIMERH, 11 μA typical), along with the TIMER pin fault threshold (VTMRH) will determine the how long the N-Channel MOSFET will be allowed to conduct excessive current before the MOSFET is turned-off. When this delay time expires, the gate is discharged at a 80 mA rate.

The LM5060 is intended for applications where precise current sensing is not required, but some level of fault protection is needed. Examples are applications where inductance or impedance in the power path limits the current rise in a short circuit condition.

The Safe Operating Area (SOA) of the external N-Channel MOSFET should be carefully considered to ensure the peak drain-to-source current and the duration of the fault delay time is within the SOA rating of the MOSFET. Also note that the RDS(ON) variations of the external N-Channel MOSFET will affect the accuracy of the Over-Current detection.