SNVS269D January   2004  – December 2014 LM5104

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Adaptive Shoot-Through Protection
      2. 7.3.2 Start-up and UVLO
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Power Dissipation Considerations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings(1)(1)

MIN MAX UNIT
VDD to VSS –0.3 18 V
VHB to VHS –0.3 18 V
IN to VSS –0.3 VDD + 0.3 V
LO Output –0.3 VDD + 0.3 V
HO Output VHS – 0.3 VHB + 0.3 V
VHS to VSS −1 100 V
VHB to VSS 118 V
RT to VSS –0.3 5 V
Junction Temperature 150 °C
Storage temperature range, Tstg –55 150 °C
(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VDD 9 14 V
HS –1 100 V
HB VHS + 8 VHS + 14 V
HS Slew Rate < 50 V/ns
Junction Temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) LM5104 UNIT
D DPR
8 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 114.5 37.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 61.1 38.1
RθJB Junction-to-board thermal resistance 55.6 14.9
ψJT Junction-to-top characterization parameter 9.7 0.4
ψJB Junction-to-board characterization parameter 54.9 15.2
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a 4.4
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

MIN and MAX limits apply over the full operating junction temperature range. Unless otherwise specified, TJ = +25°C, VDD = VHB = 12 V, VSS = VHS = 0 V, RT = 100kΩ. No Load on LO or HO.
PARAMETER TEST CONDITIONS MIN(2) TYP MAX(2) UNIT
SUPPLY CURRENTS
IDD VDD Quiescent Current LI = HI = 0 V 0.4 0.6 mA
IDDO VDD Operating Current f = 500 kHz 1.9 3 mA
IHB Total HB Quiescent Current LI = HI = 0 V 0.06 0.2 mA
IHBO Total HB Operating Current f = 500 kHz 1.3 3 mA
IHBS HB to VSS Current, Quiescent VHS = VHB = 100 V 0.05 10 µA
IHBSO HB to VSS Current, Operating f = 500 kHz 0.08 mA
INPUT PINS
VIL Low Level Input Voltage Threshold 0.8 1.8 V
VIH High Level Input Voltage Threshold 1.8 2.2 V
RI Input Pulldown Resistance 100 200 500 kΩ
TIME DELAY CONTROLS
VRT Nominal Voltage at RT 2.7 3 3.3 V
IRT RT Pin Current Limit RT = 0 V 0.75 1.5 2.25 mA
TD1 Delay Timer, RT = 10 kΩ 58 90 130 ns
TD2 Delay Timer, RT = 100 kΩ 140 200 270 ns
UNDER VOLTAGE PROTECTION
VDDR VDD Rising Threshold 6.0 6.9 7.4 V
VDDH VDD Threshold Hysteresis 0.5 V
VHBR HB Rising Threshold 5.7 6.6 7.1 V
VHBH HB Threshold Hysteresis 0.4 V
BOOT STRAP DIODE
VDL Low-Current Forward Voltage IVDD-HB = 100 µA 0.60 0.9 V
VDH High-Current Forward Voltage IVDD-HB = 100 mA 0.85 1.1 V
RD Dynamic Resistance IVDD-HB = 100 mA 0.8 1.5 Ω
LO GATE DRIVER
VOLL Low-Level Output Voltage ILO = 100 mA 0.25 0.4 V
VOHL High-Level Output Voltage ILO = –100 mA
VOHL = VDD – VLO		 0.35 0.55 V
IOHL Peak Pullup Current VLO = 0 V 1.6 A
IOLL Peak Pulldown Current VLO = 12 V 1.8 A
HO GATE DRIVER
VOLH Low-Level Output Voltage IHO = 100 mA 0.25 0.4 V
VOHH High-Level Output Voltage IHO = –100 mA,
VOHH = VHB – VHO		 0.35 0.55 V
IOHH Peak Pullup Current VHO = 0 V 1.6 A
IOLH Peak Pulldown Current VHO = 12 V 1.8 A

6.6 Switching Characteristics

MAX limits apply over the full operating junction temperature range. Unless otherwise specified, TJ = +25°C, VDD = VHB = 12 V, VSS = VHS = 0 V, No Load on LO or HO .
PARAMETER TEST CONDITIONS MIN(2) TYP MAX(2) UNIT
tLPHL Lower Turn-Off Propagation Delay
(IN Rising to LO Falling)		 25 56 ns
tHPHL Upper Turn-Off Propagation Delay
(IN Falling to HO Falling)		 25 56
tRC, tFC Either Output Rise/Fall Time CL = 1000 pF 15
tR, tF Either Output Rise/Fall Time (3V to 9V) CL = 0.1 µF 0.6 µs
tBS Bootstrap Diode Turn-Off Time IF = 20 mA, IR = 200 mA 50 ns
(1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Recommended Operating Conditions under which operation of the device is specified. Recommended Operating Conditions do not imply performance limits. For performance limits and associated test conditions, see Electrical Characteristics.
(2) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).

6.7 Typical Characteristics

20089010.gifFigure 1. IDD vs Frequency
20089012.gifFigure 3. Quiescent Current vs Supply Voltage
20089011.gifFigure 2. Operating Current vs Temperature
20089013.gifFigure 4. Quiescent Current vs Temperature
20089017.gifFigure 5. IHB vs Frequency
20089016.gifFigure 7. Diode Forward Voltage
20089020.gifFigure 9. Undervoltage Rising Threshold vs Temperature
20089022.gifFigure 11. LO and HO Gate Drive—Low-Level Output Voltage vs Temperature
20089015.gifFigure 13. Timing vs Temperature RT = 10K
20089018.gifFigure 6. HO & LO Peak Output Current vs Output Voltage
20089019.gifFigure 8. Undervoltage Threshold Hysteresis vs Temperature
20089021.gifFigure 10. LO and HO Gate Drive—High-Level Output Voltage vs Temperature
20089023.gifFigure 12. Turn Off Propagation Delay vs Temperature
20089024.gifFigure 14. Timing vs Temperature RT = 100K