SNVSAG6A November   2015  – December 2015 LM5109B-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
    1. 4.1 Absolute Maximum Ratings
    2. 4.2 ESD Ratings
    3. 4.3 Recommended Operating Conditions
    4. 4.4 Thermal Information
    5. 4.5 Electrical Characteristics
    6. 4.6 Switching Characteristics
    7. 4.7 Typical Characteristics
  5. 5 Detailed Description
    1. 5.1 Overview
    2. 5.2 Functional Block Diagram
    3. 5.3 Feature Description
      1. 5.3.1 Start-up and UVLO
      2. 5.3.2 Level Shift
      3. 5.3.3 Output Stages
    4. 5.4 HS Transient Voltages Below Ground
    5. 5.5 Device Functional Modes
  6. 6 Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Typical Application
      1. 6.2.1 Design Requirements
      2. 6.2.2 Detailed Design Procedure
        1. 6.2.2.1 Select Bootstrap and VDD Capacitor
        2. 6.2.2.2 Select External Bootstrap Diode and Its Series Resistor
        3. 6.2.2.3 Selecting External Gate Driver Resistor
        4. 6.2.2.4 Estimate the Driver Power Loss
      3. 6.2.3 Application Curves
  7. 7 Power Supply Recommendations
  8. 8 Layout
    1. 8.1 Layout Guidelines
    2. 8.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Community Resources
    2. 9.2 Trademarks
    3. 9.3 Electrostatic Discharge Caution
    4. 9.4 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C4A
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1-A Peak Output Current (1.0-A Sink/1.0-A Source)
  • Independent TTL/CMOS Compatible Inputs
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load with 15-ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Thermally-Enhanced WSON-8 Package

2 Applications

  • Push-Pull Converters
  • Half and Full Bridge Power Converters
  • Solid State Motor Drives
  • Two Switch Forward Power Converters

3 Description

The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
LM5109B-Q1 WSON (8) 4.00 mm × 4.00 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Application Diagram

LM5109B-Q1 simplified_application_snvsag6.gif