SNVS499I February   2007  – November 2023 LM5116

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Performance Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 High Voltage Start-Up Regulator
      2. 6.3.2 Enable
      3. 6.3.3 UVLO
      4. 6.3.4 Oscillator and Sync Capability
      5. 6.3.5 Error Amplifier and PWM Comparator
      6. 6.3.6 Ramp Generator
      7. 6.3.7 Current Limit
      8. 6.3.8 HO Output
      9. 6.3.9 Thermal Protection
    4. 6.4 Device Functional Modes
      1. 6.4.1 Soft-Start and Diode Emulation
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1  Custom Design with WEBENCH® Tools
        2. 7.2.2.2  Timing Resistor
        3. 7.2.2.3  Output Inductor
        4. 7.2.2.4  Current Sense Resistor
        5. 7.2.2.5  Ramp Capacitor
        6. 7.2.2.6  Output Capacitors
        7. 7.2.2.7  Input Capacitors
        8. 7.2.2.8  VCC Capacitor
        9. 7.2.2.9  Bootstrap Capacitor
        10. 7.2.2.10 Soft Start Capacitor
        11. 7.2.2.11 Output Voltage Divider
        12. 7.2.2.12 UVLO Divider
        13. 7.2.2.13 MOSFETs
        14. 7.2.2.14 MOSFET Snubber
        15. 7.2.2.15 Error Amplifier Compensation
        16. 7.2.2.16 Comprehensive Equations
          1. 7.2.2.16.1 Current Sense Resistor and Ramp Capacitor
          2. 7.2.2.16.2 Modulator Transfer Function
          3. 7.2.2.16.3 Error Amplifier Transfer Function
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
      2. 8.1.2 Development Support
        1. 8.1.2.1 Custom Design with WEBENCH® Tools
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.2.2.9 Bootstrap Capacitor

The bootstrap capacitor (CHB) between the HB and SW pins supplies the gate current to charge the high-side MOSFET gate at each cycle turn-on as well as supplying the recovery charge for the bootstrap diode (D1). These current peaks can be several amperes. The recommended value of the bootstrap capacitor is at least 0.1 µF, and must be a good quality, low ESR, ceramic capacitor located at the pins of the IC to minimize potentially damaging voltage transients caused by trace inductance. The absolute minimum value for the bootstrap capacitor is calculated as:

Equation 21. GUID-FDB05BE0-9DB1-4220-A679-11661F78118B-low.gif

where

  • Qg is the high-side MOSFET gate charge
  • ΔVHB is the tolerable voltage droop on CHB

CHB is typically less than 5% of VCC. A value of 1 µF was selected for this design.